Performance of titanium nitride diffusion barriers in aluminum-titanium metallization schemes for integrated circuits

    Research output: Contribution to journalArticleScientificpeer-review

    62 Citations (Scopus)

    Abstract

    Three different contact schemes Al–Si, Al/Ti–Si, and Al/TiN/Ti–Si have been studied for their electrical characteristics and thermal stability on shallow n+p‐junctions. Contact resistance and leakage current measurements indicate that the Al/Ti structure remains stable up to 450 °C and the Al/TiN/Ti structure up to 500 °C for 15 min, whereas Al–Si contacts degrade already at 400 °C. The stability of the Al/Ti contacts is limited by the thin film reaction between Al and Ti while the failure of the Al/TiN/Ti structure is attributed to local defects such as pinholes in the TiN barrier.
    Original languageEnglish
    Pages (from-to)2233-2236
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Volume3
    Issue number6
    DOIs
    Publication statusPublished - 1 Jan 1985
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Titanium nitride
    Diffusion barriers
    titanium nitrides
    Electric current measurement
    Contact resistance
    Metallizing
    Titanium
    Aluminum
    Leakage currents
    integrated circuits
    Integrated circuits
    Thermodynamic stability
    titanium
    aluminum
    Thin films
    Defects
    pinholes
    contact resistance
    electric contacts
    leakage

    Cite this

    @article{6bf68adbda2e48e1b4c5dbc71b0f789f,
    title = "Performance of titanium nitride diffusion barriers in aluminum-titanium metallization schemes for integrated circuits",
    abstract = "Three different contact schemes Al–Si, Al/Ti–Si, and Al/TiN/Ti–Si have been studied for their electrical characteristics and thermal stability on shallow n+p‐junctions. Contact resistance and leakage current measurements indicate that the Al/Ti structure remains stable up to 450 °C and the Al/TiN/Ti structure up to 500 °C for 15 min, whereas Al–Si contacts degrade already at 400 °C. The stability of the Al/Ti contacts is limited by the thin film reaction between Al and Ti while the failure of the Al/TiN/Ti structure is attributed to local defects such as pinholes in the TiN barrier.",
    author = "I. Suni and M. Blomberg and J. Saarilahti",
    year = "1985",
    month = "1",
    day = "1",
    doi = "10.1116/1.572898",
    language = "English",
    volume = "3",
    pages = "2233--2236",
    journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",
    issn = "0734-2101",
    publisher = "American Vacuum Society AVS",
    number = "6",

    }

    TY - JOUR

    T1 - Performance of titanium nitride diffusion barriers in aluminum-titanium metallization schemes for integrated circuits

    AU - Suni, I.

    AU - Blomberg, M.

    AU - Saarilahti, J.

    PY - 1985/1/1

    Y1 - 1985/1/1

    N2 - Three different contact schemes Al–Si, Al/Ti–Si, and Al/TiN/Ti–Si have been studied for their electrical characteristics and thermal stability on shallow n+p‐junctions. Contact resistance and leakage current measurements indicate that the Al/Ti structure remains stable up to 450 °C and the Al/TiN/Ti structure up to 500 °C for 15 min, whereas Al–Si contacts degrade already at 400 °C. The stability of the Al/Ti contacts is limited by the thin film reaction between Al and Ti while the failure of the Al/TiN/Ti structure is attributed to local defects such as pinholes in the TiN barrier.

    AB - Three different contact schemes Al–Si, Al/Ti–Si, and Al/TiN/Ti–Si have been studied for their electrical characteristics and thermal stability on shallow n+p‐junctions. Contact resistance and leakage current measurements indicate that the Al/Ti structure remains stable up to 450 °C and the Al/TiN/Ti structure up to 500 °C for 15 min, whereas Al–Si contacts degrade already at 400 °C. The stability of the Al/Ti contacts is limited by the thin film reaction between Al and Ti while the failure of the Al/TiN/Ti structure is attributed to local defects such as pinholes in the TiN barrier.

    U2 - 10.1116/1.572898

    DO - 10.1116/1.572898

    M3 - Article

    AN - SCOPUS:0000146468

    VL - 3

    SP - 2233

    EP - 2236

    JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

    JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

    SN - 0734-2101

    IS - 6

    ER -