Performance of titanium nitride diffusion barriers in aluminum-titanium metallization schemes for integrated circuits

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    Abstract

    Three different contact schemes Al–Si, Al/Ti–Si, and Al/TiN/Ti–Si have been studied for their electrical characteristics and thermal stability on shallow n+p‐junctions. Contact resistance and leakage current measurements indicate that the Al/Ti structure remains stable up to 450 °C and the Al/TiN/Ti structure up to 500 °C for 15 min, whereas Al–Si contacts degrade already at 400 °C. The stability of the Al/Ti contacts is limited by the thin film reaction between Al and Ti while the failure of the Al/TiN/Ti structure is attributed to local defects such as pinholes in the TiN barrier.
    Original languageEnglish
    Pages (from-to)2233-2236
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Volume3
    Issue number6
    DOIs
    Publication statusPublished - 1 Jan 1985
    MoE publication typeA1 Journal article-refereed

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