Abstract
Three different contact schemes Al–Si, Al/Ti–Si, and Al/TiN/Ti–Si have been studied for their electrical characteristics and thermal stability on shallow n+p‐junctions. Contact resistance and leakage current measurements indicate that the Al/Ti structure remains stable up to 450 °C and the Al/TiN/Ti structure
up to 500 °C for 15 min, whereas Al–Si contacts degrade already at
400 °C. The stability of the Al/Ti contacts is limited by the thin film reaction between Al and Ti while the failure of the Al/TiN/Ti structure is attributed to local defects such as pinholes in the TiN barrier.
Original language | English |
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Pages (from-to) | 2233-2236 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 3 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1 Jan 1985 |
MoE publication type | A1 Journal article-refereed |