Performance of titanium nitride diffusion barriers in aluminum-titanium metallization schemes for integrated circuits

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Abstract

Three different contact schemes Al–Si, Al/Ti–Si, and Al/TiN/Ti–Si have been studied for their electrical characteristics and thermal stability on shallow n+p‐junctions. Contact resistance and leakage current measurements indicate that the Al/Ti structure remains stable up to 450 °C and the Al/TiN/Ti structure up to 500 °C for 15 min, whereas Al–Si contacts degrade already at 400 °C. The stability of the Al/Ti contacts is limited by the thin film reaction between Al and Ti while the failure of the Al/TiN/Ti structure is attributed to local defects such as pinholes in the TiN barrier.
Original languageEnglish
Pages (from-to)2233-2236
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume3
Issue number6
DOIs
Publication statusPublished - 1 Jan 1985
MoE publication typeA1 Journal article-refereed

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Titanium nitride
Diffusion barriers
titanium nitrides
Electric current measurement
Contact resistance
Metallizing
Titanium
Aluminum
Leakage currents
integrated circuits
Integrated circuits
Thermodynamic stability
titanium
aluminum
Thin films
Defects
pinholes
contact resistance
electric contacts
leakage

Cite this

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title = "Performance of titanium nitride diffusion barriers in aluminum-titanium metallization schemes for integrated circuits",
abstract = "Three different contact schemes Al–Si, Al/Ti–Si, and Al/TiN/Ti–Si have been studied for their electrical characteristics and thermal stability on shallow n+p‐junctions. Contact resistance and leakage current measurements indicate that the Al/Ti structure remains stable up to 450 °C and the Al/TiN/Ti structure up to 500 °C for 15 min, whereas Al–Si contacts degrade already at 400 °C. The stability of the Al/Ti contacts is limited by the thin film reaction between Al and Ti while the failure of the Al/TiN/Ti structure is attributed to local defects such as pinholes in the TiN barrier.",
author = "I. Suni and M. Blomberg and J. Saarilahti",
year = "1985",
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doi = "10.1116/1.572898",
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issn = "0734-2101",
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T1 - Performance of titanium nitride diffusion barriers in aluminum-titanium metallization schemes for integrated circuits

AU - Suni, I.

AU - Blomberg, M.

AU - Saarilahti, J.

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Y1 - 1985/1/1

N2 - Three different contact schemes Al–Si, Al/Ti–Si, and Al/TiN/Ti–Si have been studied for their electrical characteristics and thermal stability on shallow n+p‐junctions. Contact resistance and leakage current measurements indicate that the Al/Ti structure remains stable up to 450 °C and the Al/TiN/Ti structure up to 500 °C for 15 min, whereas Al–Si contacts degrade already at 400 °C. The stability of the Al/Ti contacts is limited by the thin film reaction between Al and Ti while the failure of the Al/TiN/Ti structure is attributed to local defects such as pinholes in the TiN barrier.

AB - Three different contact schemes Al–Si, Al/Ti–Si, and Al/TiN/Ti–Si have been studied for their electrical characteristics and thermal stability on shallow n+p‐junctions. Contact resistance and leakage current measurements indicate that the Al/Ti structure remains stable up to 450 °C and the Al/TiN/Ti structure up to 500 °C for 15 min, whereas Al–Si contacts degrade already at 400 °C. The stability of the Al/Ti contacts is limited by the thin film reaction between Al and Ti while the failure of the Al/TiN/Ti structure is attributed to local defects such as pinholes in the TiN barrier.

U2 - 10.1116/1.572898

DO - 10.1116/1.572898

M3 - Article

VL - 3

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

SN - 0734-2101

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