Performance of titanium nitride diffusion barriers in aluminum-titanium metallization schemes for integrated circuits

Ilkka Suni; Martti Blomberg; Jaakko Saarilahti

doi:10.1116/1.572898

Performance of titanium nitride diffusion barriers in aluminum-titanium metallization schemes for integrated circuits

Ilkka Suni, Martti Blomberg, Jaakko Saarilahti

VTT (former employee or external)

Research output: Contribution to journal › Article › Scientific › peer-review

64 Citations (Scopus)

Abstract

Three different contact schemes Al–Si, Al/Ti–Si, and Al/TiN/Ti–Si have been studied for their electrical characteristics and thermal stability on shallow n⁺p‐junctions. Contact resistance and leakage current measurements indicate that the Al/Ti structure remains stable up to 450 °C and the Al/TiN/Ti structure up to 500 °C for 15 min, whereas Al–Si contacts degrade already at 400 °C. The stability of the Al/Ti contacts is limited by the thin film reaction between Al and Ti while the failure of the Al/TiN/Ti structure is attributed to local defects such as pinholes in the TiN barrier.

Original language	English
Pages (from-to)	2233-2236
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	3
Issue number	6
DOIs	https://doi.org/10.1116/1.572898
Publication status	Published - 1 Jan 1985
MoE publication type	A1 Journal article-refereed

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10.1116/1.572898

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title = "Performance of titanium nitride diffusion barriers in aluminum-titanium metallization schemes for integrated circuits",

abstract = "Three different contact schemes Al–Si, Al/Ti–Si, and Al/TiN/Ti–Si have been studied for their electrical characteristics and thermal stability on shallow n+p‐junctions. Contact resistance and leakage current measurements indicate that the Al/Ti structure remains stable up to 450 °C and the Al/TiN/Ti structure up to 500 °C for 15 min, whereas Al–Si contacts degrade already at 400 °C. The stability of the Al/Ti contacts is limited by the thin film reaction between Al and Ti while the failure of the Al/TiN/Ti structure is attributed to local defects such as pinholes in the TiN barrier.",

author = "Ilkka Suni and Martti Blomberg and Jaakko Saarilahti",

year = "1985",

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language = "English",

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Performance of titanium nitride diffusion barriers in aluminum-titanium metallization schemes for integrated circuits. / Suni, Ilkka; Blomberg, Martti; Saarilahti, Jaakko.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 3, No. 6, 01.01.1985, p. 2233-2236.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Performance of titanium nitride diffusion barriers in aluminum-titanium metallization schemes for integrated circuits

AU - Suni, Ilkka

AU - Blomberg, Martti

AU - Saarilahti, Jaakko

PY - 1985/1/1

Y1 - 1985/1/1

N2 - Three different contact schemes Al–Si, Al/Ti–Si, and Al/TiN/Ti–Si have been studied for their electrical characteristics and thermal stability on shallow n+p‐junctions. Contact resistance and leakage current measurements indicate that the Al/Ti structure remains stable up to 450 °C and the Al/TiN/Ti structure up to 500 °C for 15 min, whereas Al–Si contacts degrade already at 400 °C. The stability of the Al/Ti contacts is limited by the thin film reaction between Al and Ti while the failure of the Al/TiN/Ti structure is attributed to local defects such as pinholes in the TiN barrier.

AB - Three different contact schemes Al–Si, Al/Ti–Si, and Al/TiN/Ti–Si have been studied for their electrical characteristics and thermal stability on shallow n+p‐junctions. Contact resistance and leakage current measurements indicate that the Al/Ti structure remains stable up to 450 °C and the Al/TiN/Ti structure up to 500 °C for 15 min, whereas Al–Si contacts degrade already at 400 °C. The stability of the Al/Ti contacts is limited by the thin film reaction between Al and Ti while the failure of the Al/TiN/Ti structure is attributed to local defects such as pinholes in the TiN barrier.

U2 - 10.1116/1.572898

DO - 10.1116/1.572898

M3 - Article

AN - SCOPUS:0000146468

SN - 0734-2101

VL - 3

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 6

ER -

Performance of titanium nitride diffusion barriers in aluminum-titanium metallization schemes for integrated circuits

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