Photo-induced insulator-metal transition in Pr0.6Ca0.4MnO3 thin films grown by pulsed laser deposition: Effect of thickness dependent structural and transport properties

T. Elovaara, H. Huhtinen, Sayani Majumdar, P. Paturi

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

We report photo-induced colossal magnetoresistive insulator-metal transition (IMT) in Pr0.6Ca0.4MnO3 thin films under much reduced applied magnetic field. The colossal effect was studied as a function of film thickness and thus with variable structural properties. Thorough structural, magnetic and magnetotransport characterization under light shows that the highest effect on the transition field can be obtained in the thinnest film (38 nm). However, due to the substrate induced strain of this film the required magnetic field for IMT is quite high. The best crystalline properties of the 110 nm film lead to the lowest IMT field under light and 109% change in resistance at 10 K. With increasing thickness, the film properties start to move more toward the bulk material and, hence, IMT is no more observed under the applied field of 9 T. Our results indicate that for obtaining large photo-induced CMR, the best epitaxial quality of thin films is essential.
Original languageEnglish
Pages (from-to)17-21
JournalApplied Surface Science
Volume381
DOIs
Publication statusPublished - 2016
MoE publication typeA1 Journal article-refereed

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Metal insulator transition
Pulsed laser deposition
Transport properties
Structural properties
Thin films
Magnetic fields
Galvanomagnetic effects
Film thickness
Crystalline materials
Substrates

Cite this

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title = "Photo-induced insulator-metal transition in Pr0.6Ca0.4MnO3 thin films grown by pulsed laser deposition: Effect of thickness dependent structural and transport properties",
abstract = "We report photo-induced colossal magnetoresistive insulator-metal transition (IMT) in Pr0.6Ca0.4MnO3 thin films under much reduced applied magnetic field. The colossal effect was studied as a function of film thickness and thus with variable structural properties. Thorough structural, magnetic and magnetotransport characterization under light shows that the highest effect on the transition field can be obtained in the thinnest film (38 nm). However, due to the substrate induced strain of this film the required magnetic field for IMT is quite high. The best crystalline properties of the 110 nm film lead to the lowest IMT field under light and 109{\%} change in resistance at 10 K. With increasing thickness, the film properties start to move more toward the bulk material and, hence, IMT is no more observed under the applied field of 9 T. Our results indicate that for obtaining large photo-induced CMR, the best epitaxial quality of thin films is essential.",
author = "T. Elovaara and H. Huhtinen and Sayani Majumdar and P. Paturi",
year = "2016",
doi = "10.1016/j.apsusc.2016.02.134",
language = "English",
volume = "381",
pages = "17--21",
journal = "Applied Surface Science",
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Photo-induced insulator-metal transition in Pr0.6Ca0.4MnO3 thin films grown by pulsed laser deposition: Effect of thickness dependent structural and transport properties. / Elovaara, T.; Huhtinen, H.; Majumdar, Sayani; Paturi, P.

In: Applied Surface Science, Vol. 381, 2016, p. 17-21.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Photo-induced insulator-metal transition in Pr0.6Ca0.4MnO3 thin films grown by pulsed laser deposition: Effect of thickness dependent structural and transport properties

AU - Elovaara, T.

AU - Huhtinen, H.

AU - Majumdar, Sayani

AU - Paturi, P.

PY - 2016

Y1 - 2016

N2 - We report photo-induced colossal magnetoresistive insulator-metal transition (IMT) in Pr0.6Ca0.4MnO3 thin films under much reduced applied magnetic field. The colossal effect was studied as a function of film thickness and thus with variable structural properties. Thorough structural, magnetic and magnetotransport characterization under light shows that the highest effect on the transition field can be obtained in the thinnest film (38 nm). However, due to the substrate induced strain of this film the required magnetic field for IMT is quite high. The best crystalline properties of the 110 nm film lead to the lowest IMT field under light and 109% change in resistance at 10 K. With increasing thickness, the film properties start to move more toward the bulk material and, hence, IMT is no more observed under the applied field of 9 T. Our results indicate that for obtaining large photo-induced CMR, the best epitaxial quality of thin films is essential.

AB - We report photo-induced colossal magnetoresistive insulator-metal transition (IMT) in Pr0.6Ca0.4MnO3 thin films under much reduced applied magnetic field. The colossal effect was studied as a function of film thickness and thus with variable structural properties. Thorough structural, magnetic and magnetotransport characterization under light shows that the highest effect on the transition field can be obtained in the thinnest film (38 nm). However, due to the substrate induced strain of this film the required magnetic field for IMT is quite high. The best crystalline properties of the 110 nm film lead to the lowest IMT field under light and 109% change in resistance at 10 K. With increasing thickness, the film properties start to move more toward the bulk material and, hence, IMT is no more observed under the applied field of 9 T. Our results indicate that for obtaining large photo-induced CMR, the best epitaxial quality of thin films is essential.

U2 - 10.1016/j.apsusc.2016.02.134

DO - 10.1016/j.apsusc.2016.02.134

M3 - Article

VL - 381

SP - 17

EP - 21

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -