We demonstrate the synthesis of single-layer graphene films on copper by photo-thermal chemical vapor deposition (PTCVD) realized using a rapid thermal processing system typically used in CMOS processing. Influence of the temperature on the low-pressure (10 mbar) graphene synthesis using methane precursor was characterized by analyzing the crystalline quality, thickness and electronic properties of the films. Using a growth time of only 60 s, for graphene fabricated at 950 °C the sheet resistance and mobility show equivalent quality compared to thermal CVD graphene. Moreover, μ-Raman mapping reveals very low defect density and high 2D to G band ratio similar to the fingerprint of exfoliated single-layer graphene. The synthesis process was found to exhibit a threshold at around 900 °C at which (and below) the single-layer graphene film does not contain adlayer flakes typically observed in high temperature CVD graphene on copper. Our study shows that PTCVD can be used for the high throughput fabrication of high-quality single-layer graphene on copper and is therefore a promising method while pursuing cost-effective graphene fabrication.