Photo-thermal chemical vapor deposition of graphene on copper

J. Riikonen (Corresponding Author), W. Kim, C. Li, O. Svensk, Sanna Arpiainen, Markku Kainlauri, H. Lipsanen

    Research output: Contribution to journalArticleScientificpeer-review

    20 Citations (Scopus)

    Abstract

    We demonstrate the synthesis of single-layer graphene films on copper by photo-thermal chemical vapor deposition (PTCVD) realized using a rapid thermal processing system typically used in CMOS processing. Influence of the temperature on the low-pressure (10 mbar) graphene synthesis using methane precursor was characterized by analyzing the crystalline quality, thickness and electronic properties of the films. Using a growth time of only 60 s, for graphene fabricated at 950 °C the sheet resistance and mobility show equivalent quality compared to thermal CVD graphene. Moreover, μ-Raman mapping reveals very low defect density and high 2D to G band ratio similar to the fingerprint of exfoliated single-layer graphene. The synthesis process was found to exhibit a threshold at around 900 °C at which (and below) the single-layer graphene film does not contain adlayer flakes typically observed in high temperature CVD graphene on copper. Our study shows that PTCVD can be used for the high throughput fabrication of high-quality single-layer graphene on copper and is therefore a promising method while pursuing cost-effective graphene fabrication.
    Original languageEnglish
    Pages (from-to)43-50
    Number of pages7
    JournalCarbon
    Volume62
    DOIs
    Publication statusPublished - 2013
    MoE publication typeA1 Journal article-refereed

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    Graphite
    Graphene
    Copper
    Chemical vapor deposition
    Rapid thermal processing
    Hot Temperature
    Fabrication
    Defect density
    Sheet resistance
    Methane
    Electronic properties
    Throughput
    Crystalline materials
    Temperature

    Cite this

    Riikonen, J. ; Kim, W. ; Li, C. ; Svensk, O. ; Arpiainen, Sanna ; Kainlauri, Markku ; Lipsanen, H. / Photo-thermal chemical vapor deposition of graphene on copper. In: Carbon. 2013 ; Vol. 62. pp. 43-50.
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    title = "Photo-thermal chemical vapor deposition of graphene on copper",
    abstract = "We demonstrate the synthesis of single-layer graphene films on copper by photo-thermal chemical vapor deposition (PTCVD) realized using a rapid thermal processing system typically used in CMOS processing. Influence of the temperature on the low-pressure (10 mbar) graphene synthesis using methane precursor was characterized by analyzing the crystalline quality, thickness and electronic properties of the films. Using a growth time of only 60 s, for graphene fabricated at 950 °C the sheet resistance and mobility show equivalent quality compared to thermal CVD graphene. Moreover, μ-Raman mapping reveals very low defect density and high 2D to G band ratio similar to the fingerprint of exfoliated single-layer graphene. The synthesis process was found to exhibit a threshold at around 900 °C at which (and below) the single-layer graphene film does not contain adlayer flakes typically observed in high temperature CVD graphene on copper. Our study shows that PTCVD can be used for the high throughput fabrication of high-quality single-layer graphene on copper and is therefore a promising method while pursuing cost-effective graphene fabrication.",
    author = "J. Riikonen and W. Kim and C. Li and O. Svensk and Sanna Arpiainen and Markku Kainlauri and H. Lipsanen",
    year = "2013",
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    Photo-thermal chemical vapor deposition of graphene on copper. / Riikonen, J. (Corresponding Author); Kim, W.; Li, C.; Svensk, O.; Arpiainen, Sanna; Kainlauri, Markku; Lipsanen, H.

    In: Carbon, Vol. 62, 2013, p. 43-50.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Photo-thermal chemical vapor deposition of graphene on copper

    AU - Riikonen, J.

    AU - Kim, W.

    AU - Li, C.

    AU - Svensk, O.

    AU - Arpiainen, Sanna

    AU - Kainlauri, Markku

    AU - Lipsanen, H.

    PY - 2013

    Y1 - 2013

    N2 - We demonstrate the synthesis of single-layer graphene films on copper by photo-thermal chemical vapor deposition (PTCVD) realized using a rapid thermal processing system typically used in CMOS processing. Influence of the temperature on the low-pressure (10 mbar) graphene synthesis using methane precursor was characterized by analyzing the crystalline quality, thickness and electronic properties of the films. Using a growth time of only 60 s, for graphene fabricated at 950 °C the sheet resistance and mobility show equivalent quality compared to thermal CVD graphene. Moreover, μ-Raman mapping reveals very low defect density and high 2D to G band ratio similar to the fingerprint of exfoliated single-layer graphene. The synthesis process was found to exhibit a threshold at around 900 °C at which (and below) the single-layer graphene film does not contain adlayer flakes typically observed in high temperature CVD graphene on copper. Our study shows that PTCVD can be used for the high throughput fabrication of high-quality single-layer graphene on copper and is therefore a promising method while pursuing cost-effective graphene fabrication.

    AB - We demonstrate the synthesis of single-layer graphene films on copper by photo-thermal chemical vapor deposition (PTCVD) realized using a rapid thermal processing system typically used in CMOS processing. Influence of the temperature on the low-pressure (10 mbar) graphene synthesis using methane precursor was characterized by analyzing the crystalline quality, thickness and electronic properties of the films. Using a growth time of only 60 s, for graphene fabricated at 950 °C the sheet resistance and mobility show equivalent quality compared to thermal CVD graphene. Moreover, μ-Raman mapping reveals very low defect density and high 2D to G band ratio similar to the fingerprint of exfoliated single-layer graphene. The synthesis process was found to exhibit a threshold at around 900 °C at which (and below) the single-layer graphene film does not contain adlayer flakes typically observed in high temperature CVD graphene on copper. Our study shows that PTCVD can be used for the high throughput fabrication of high-quality single-layer graphene on copper and is therefore a promising method while pursuing cost-effective graphene fabrication.

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    ER -