Photo-thermal chemical vapor deposition of graphene on copper

J. Riikonen (Corresponding Author), W. Kim, C. Li, O. Svensk, Sanna Arpiainen, Markku Kainlauri, H. Lipsanen

Research output: Contribution to journalArticleScientificpeer-review

19 Citations (Scopus)

Abstract

We demonstrate the synthesis of single-layer graphene films on copper by photo-thermal chemical vapor deposition (PTCVD) realized using a rapid thermal processing system typically used in CMOS processing. Influence of the temperature on the low-pressure (10 mbar) graphene synthesis using methane precursor was characterized by analyzing the crystalline quality, thickness and electronic properties of the films. Using a growth time of only 60 s, for graphene fabricated at 950 °C the sheet resistance and mobility show equivalent quality compared to thermal CVD graphene. Moreover, μ-Raman mapping reveals very low defect density and high 2D to G band ratio similar to the fingerprint of exfoliated single-layer graphene. The synthesis process was found to exhibit a threshold at around 900 °C at which (and below) the single-layer graphene film does not contain adlayer flakes typically observed in high temperature CVD graphene on copper. Our study shows that PTCVD can be used for the high throughput fabrication of high-quality single-layer graphene on copper and is therefore a promising method while pursuing cost-effective graphene fabrication.
Original languageEnglish
Pages (from-to)43-50
Number of pages7
JournalCarbon
Volume62
DOIs
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

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Graphite
Graphene
Copper
Chemical vapor deposition
Rapid thermal processing
Hot Temperature
Fabrication
Defect density
Sheet resistance
Methane
Electronic properties
Throughput
Crystalline materials
Temperature

Cite this

Riikonen, J. ; Kim, W. ; Li, C. ; Svensk, O. ; Arpiainen, Sanna ; Kainlauri, Markku ; Lipsanen, H. / Photo-thermal chemical vapor deposition of graphene on copper. In: Carbon. 2013 ; Vol. 62. pp. 43-50.
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Photo-thermal chemical vapor deposition of graphene on copper. / Riikonen, J. (Corresponding Author); Kim, W.; Li, C.; Svensk, O.; Arpiainen, Sanna; Kainlauri, Markku; Lipsanen, H.

In: Carbon, Vol. 62, 2013, p. 43-50.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Photo-thermal chemical vapor deposition of graphene on copper

AU - Riikonen, J.

AU - Kim, W.

AU - Li, C.

AU - Svensk, O.

AU - Arpiainen, Sanna

AU - Kainlauri, Markku

AU - Lipsanen, H.

PY - 2013

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N2 - We demonstrate the synthesis of single-layer graphene films on copper by photo-thermal chemical vapor deposition (PTCVD) realized using a rapid thermal processing system typically used in CMOS processing. Influence of the temperature on the low-pressure (10 mbar) graphene synthesis using methane precursor was characterized by analyzing the crystalline quality, thickness and electronic properties of the films. Using a growth time of only 60 s, for graphene fabricated at 950 °C the sheet resistance and mobility show equivalent quality compared to thermal CVD graphene. Moreover, μ-Raman mapping reveals very low defect density and high 2D to G band ratio similar to the fingerprint of exfoliated single-layer graphene. The synthesis process was found to exhibit a threshold at around 900 °C at which (and below) the single-layer graphene film does not contain adlayer flakes typically observed in high temperature CVD graphene on copper. Our study shows that PTCVD can be used for the high throughput fabrication of high-quality single-layer graphene on copper and is therefore a promising method while pursuing cost-effective graphene fabrication.

AB - We demonstrate the synthesis of single-layer graphene films on copper by photo-thermal chemical vapor deposition (PTCVD) realized using a rapid thermal processing system typically used in CMOS processing. Influence of the temperature on the low-pressure (10 mbar) graphene synthesis using methane precursor was characterized by analyzing the crystalline quality, thickness and electronic properties of the films. Using a growth time of only 60 s, for graphene fabricated at 950 °C the sheet resistance and mobility show equivalent quality compared to thermal CVD graphene. Moreover, μ-Raman mapping reveals very low defect density and high 2D to G band ratio similar to the fingerprint of exfoliated single-layer graphene. The synthesis process was found to exhibit a threshold at around 900 °C at which (and below) the single-layer graphene film does not contain adlayer flakes typically observed in high temperature CVD graphene on copper. Our study shows that PTCVD can be used for the high throughput fabrication of high-quality single-layer graphene on copper and is therefore a promising method while pursuing cost-effective graphene fabrication.

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