Photocurrent method for characterizing the interface of hydrophobically bonded Si wafers

Tommi Suni; Kimmo Henttinen; Ilkka Suni; L.S. Yu; P. Mages; D. Qiao; L. Jia; P.K.L. Yu; S.S. Lau

doi:10.1063/1.1544063

Photocurrent method for characterizing the interface of hydrophobically bonded Si wafers

Tommi Suni, Kimmo Henttinen, Ilkka Suni, L.S. Yu, P. Mages, D. Qiao, L. Jia, P.K.L. Yu, S.S. Lau

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Abstract

We report a simple and nondestructive photocurrent method for characterizing the bonding interface between two hydrophobically bonded Si wafers. The relationship of photocurrent versus wavelength was measured and analyzed. The direction of the photocurrent indicates the band-bending direction, and thus, the donor or acceptor nature of the interface states. The photocurrent is proportional to the electric field at the interface induced by band bending. Our results showed that the Si pairs bonded in air have much larger band bending at the interface than those bonded in dry nitrogen, and that both have donor-like interface states.

Original language	English
Pages (from-to)	916-918
Journal	Applied Physics Letters
Volume	82
Issue number	6
DOIs	https://doi.org/10.1063/1.1544063
Publication status	Published - 2003
MoE publication type	A1 Journal article-refereed

Keywords

silicon
elemental semiconductors
wafer bonding
photoconductivity
interface states
band structure
semiconductor device measurement

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title = "Photocurrent method for characterizing the interface of hydrophobically bonded Si wafers",

abstract = "We report a simple and nondestructive photocurrent method for characterizing the bonding interface between two hydrophobically bonded Si wafers. The relationship of photocurrent versus wavelength was measured and analyzed. The direction of the photocurrent indicates the band-bending direction, and thus, the donor or acceptor nature of the interface states. The photocurrent is proportional to the electric field at the interface induced by band bending. Our results showed that the Si pairs bonded in air have much larger band bending at the interface than those bonded in dry nitrogen, and that both have donor-like interface states.",

keywords = "silicon, elemental semiconductors, wafer bonding, photoconductivity, interface states, band structure, semiconductor device measurement",

author = "Tommi Suni and Kimmo Henttinen and Ilkka Suni and L.S. Yu and P. Mages and D. Qiao and L. Jia and P.K.L. Yu and S.S. Lau",

note = "Project code: T3SU00071",

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doi = "10.1063/1.1544063",

language = "English",

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pages = "916--918",

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publisher = "American Institute of Physics (AIP)",

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TY - JOUR

T1 - Photocurrent method for characterizing the interface of hydrophobically bonded Si wafers

AU - Suni, Tommi

AU - Henttinen, Kimmo

AU - Suni, Ilkka

AU - Yu, L.S.

AU - Mages, P.

AU - Qiao, D.

AU - Jia, L.

AU - Yu, P.K.L.

AU - Lau, S.S.

N1 - Project code: T3SU00071

PY - 2003

Y1 - 2003

N2 - We report a simple and nondestructive photocurrent method for characterizing the bonding interface between two hydrophobically bonded Si wafers. The relationship of photocurrent versus wavelength was measured and analyzed. The direction of the photocurrent indicates the band-bending direction, and thus, the donor or acceptor nature of the interface states. The photocurrent is proportional to the electric field at the interface induced by band bending. Our results showed that the Si pairs bonded in air have much larger band bending at the interface than those bonded in dry nitrogen, and that both have donor-like interface states.

AB - We report a simple and nondestructive photocurrent method for characterizing the bonding interface between two hydrophobically bonded Si wafers. The relationship of photocurrent versus wavelength was measured and analyzed. The direction of the photocurrent indicates the band-bending direction, and thus, the donor or acceptor nature of the interface states. The photocurrent is proportional to the electric field at the interface induced by band bending. Our results showed that the Si pairs bonded in air have much larger band bending at the interface than those bonded in dry nitrogen, and that both have donor-like interface states.

KW - silicon

KW - elemental semiconductors

KW - wafer bonding

KW - photoconductivity

KW - interface states

KW - band structure

KW - semiconductor device measurement

U2 - 10.1063/1.1544063

DO - 10.1063/1.1544063

M3 - Article

VL - 82

SP - 916

EP - 918

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

ER -