Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 916-918 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 82 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2003 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- silicon
- elemental semiconductors
- wafer bonding
- photoconductivity
- interface states
- band structure
- semiconductor device measurement
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Photocurrent method for characterizing the interface of hydrophobically bonded Si wafers. / Suni, Tommi; Henttinen, Kimmo; Suni, Ilkka; Yu, L.S.; Mages, P.; Qiao, D.; Jia, L.; Yu, P.K.L.; Lau, S.S.
In: Applied Physics Letters, Vol. 82, No. 6, 2003, p. 916-918.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Photocurrent method for characterizing the interface of hydrophobically bonded Si wafers
AU - Suni, Tommi
AU - Henttinen, Kimmo
AU - Suni, Ilkka
AU - Yu, L.S.
AU - Mages, P.
AU - Qiao, D.
AU - Jia, L.
AU - Yu, P.K.L.
AU - Lau, S.S.
N1 - Project code: T3SU00071
PY - 2003
Y1 - 2003
N2 - We report a simple and nondestructive photocurrent method for characterizing the bonding interface between two hydrophobically bonded Si wafers. The relationship of photocurrent versus wavelength was measured and analyzed. The direction of the photocurrent indicates the band-bending direction, and thus, the donor or acceptor nature of the interface states. The photocurrent is proportional to the electric field at the interface induced by band bending. Our results showed that the Si pairs bonded in air have much larger band bending at the interface than those bonded in dry nitrogen, and that both have donor-like interface states.
AB - We report a simple and nondestructive photocurrent method for characterizing the bonding interface between two hydrophobically bonded Si wafers. The relationship of photocurrent versus wavelength was measured and analyzed. The direction of the photocurrent indicates the band-bending direction, and thus, the donor or acceptor nature of the interface states. The photocurrent is proportional to the electric field at the interface induced by band bending. Our results showed that the Si pairs bonded in air have much larger band bending at the interface than those bonded in dry nitrogen, and that both have donor-like interface states.
KW - silicon
KW - elemental semiconductors
KW - wafer bonding
KW - photoconductivity
KW - interface states
KW - band structure
KW - semiconductor device measurement
U2 - 10.1063/1.1544063
DO - 10.1063/1.1544063
M3 - Article
VL - 82
SP - 916
EP - 918
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 6
ER -