Photoinduced Colossal Magnetoresistance under Substantially Reduced Magnetic Field

T. Elovaara, S. Majumdar, H. Huhtinen, P. Paturi

Research output: Contribution to journalArticleScientificpeer-review

12 Citations (Scopus)

Abstract


The colossal magnetoresistive insulator to metal switching of almost nine orders of magnitude under the significantly reduced magnetic field is achieved by illumination for the low bandwidth manganite thin films. Similarly, by changing the measuring bias voltage through the sample the required magnetic field for insulator–metal transition can be further fine‐tuned. By applying a magnetic field of suitable strength, the samples can also be tuned to be extra sensitive to the illumination having colossal effect on the resistivity at low temperatures. This kind of utilizing of multiple external stimulants, which together change the properties of the material, could have significant impact on the new generation of phase‐change memories working under affordable conditions.
Original languageEnglish
Pages (from-to)5030-5037
JournalAdvanced Functional Materials
Volume25
Issue number31
DOIs
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

Fingerprint

Colossal magnetoresistance
Magnetic fields
Lighting
illumination
stimulants
magnetic fields
Bias voltage
Metals
insulators
bandwidth
Bandwidth
Data storage equipment
Thin films
electrical resistivity
electric potential
thin films
metals
Temperature

Cite this

Elovaara, T. ; Majumdar, S. ; Huhtinen, H. ; Paturi, P. / Photoinduced Colossal Magnetoresistance under Substantially Reduced Magnetic Field. In: Advanced Functional Materials. 2015 ; Vol. 25, No. 31. pp. 5030-5037.
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Photoinduced Colossal Magnetoresistance under Substantially Reduced Magnetic Field. / Elovaara, T.; Majumdar, S.; Huhtinen, H.; Paturi, P.

In: Advanced Functional Materials, Vol. 25, No. 31, 2015, p. 5030-5037.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Paturi, P.

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AB - The colossal magnetoresistive insulator to metal switching of almost nine orders of magnitude under the significantly reduced magnetic field is achieved by illumination for the low bandwidth manganite thin films. Similarly, by changing the measuring bias voltage through the sample the required magnetic field for insulator–metal transition can be further fine‐tuned. By applying a magnetic field of suitable strength, the samples can also be tuned to be extra sensitive to the illumination having colossal effect on the resistivity at low temperatures. This kind of utilizing of multiple external stimulants, which together change the properties of the material, could have significant impact on the new generation of phase‐change memories working under affordable conditions.

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