Photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures

T. Hakkarainen (Corresponding Author), E.-M. Pavelescu, Jari Likonen

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)

    Abstract

    GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures have been studied using photoluminescence (PL), X-ray diffraction (XRD) and secondary-ion mass spectrometry (SIMS). The best optical properties are achieved with the V/III beam equivalent pressure ratio (V/IIIBEP) of 10. The PL emission wavelength remains unchanged for 8⩽V/IIIBEP⩽12, suggesting that within this range neither the alloy composition nor the nitrogen sticking coefficient is changed. For the lower and higher V/IIIBEP ratios the PL wavelength is red-shifted or blue-shifted, respectively. The XRD results indicate that the nitrogen incorporation into the group-V sub-lattice is enhanced at low As pressures and reduced at high As pressures. The PL behaviour can thus be understood as a competition between As and N adatoms in occupying anion lattice sites.
    Original languageEnglish
    Pages (from-to)266-269
    Number of pages4
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume32
    Issue number1-2
    DOIs
    Publication statusPublished - 2006
    MoE publication typeA1 Journal article-refereed
    Event12th International Conference on Modulated Semiconductor Structures - Albuquerque, United States
    Duration: 10 Jul 200515 Jul 2005

    Fingerprint

    Arsenic
    Molecular beam epitaxy
    arsenic
    Semiconductor quantum wells
    Structural properties
    Photoluminescence
    molecular beam epitaxy
    quantum wells
    photoluminescence
    pressure ratio
    nitrogen
    Nitrogen
    X ray diffraction
    Wavelength
    diffraction
    wavelengths
    Adatoms
    secondary ion mass spectrometry
    adatoms
    Secondary ion mass spectrometry

    Keywords

    • photoluminescence
    • molecular beam epitaxy
    • quantum wells
    • dilute nitride alloys
    • gallium
    • GaAs

    Cite this

    @article{9ebc372a9607446883e8cbfe3d71fb00,
    title = "Photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures",
    abstract = "GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures have been studied using photoluminescence (PL), X-ray diffraction (XRD) and secondary-ion mass spectrometry (SIMS). The best optical properties are achieved with the V/III beam equivalent pressure ratio (V/IIIBEP) of 10. The PL emission wavelength remains unchanged for 8⩽V/IIIBEP⩽12, suggesting that within this range neither the alloy composition nor the nitrogen sticking coefficient is changed. For the lower and higher V/IIIBEP ratios the PL wavelength is red-shifted or blue-shifted, respectively. The XRD results indicate that the nitrogen incorporation into the group-V sub-lattice is enhanced at low As pressures and reduced at high As pressures. The PL behaviour can thus be understood as a competition between As and N adatoms in occupying anion lattice sites.",
    keywords = "photoluminescence, molecular beam epitaxy, quantum wells, dilute nitride alloys, gallium, GaAs",
    author = "T. Hakkarainen and E.-M. Pavelescu and Jari Likonen",
    year = "2006",
    doi = "10.1016/j.physe.2005.12.050",
    language = "English",
    volume = "32",
    pages = "266--269",
    journal = "Physica E: Low-Dimensional Systems and Nanostructures",
    issn = "1386-9477",
    publisher = "Elsevier",
    number = "1-2",

    }

    Photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures. / Hakkarainen, T. (Corresponding Author); Pavelescu, E.-M.; Likonen, Jari.

    In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 32, No. 1-2, 2006, p. 266-269.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures

    AU - Hakkarainen, T.

    AU - Pavelescu, E.-M.

    AU - Likonen, Jari

    PY - 2006

    Y1 - 2006

    N2 - GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures have been studied using photoluminescence (PL), X-ray diffraction (XRD) and secondary-ion mass spectrometry (SIMS). The best optical properties are achieved with the V/III beam equivalent pressure ratio (V/IIIBEP) of 10. The PL emission wavelength remains unchanged for 8⩽V/IIIBEP⩽12, suggesting that within this range neither the alloy composition nor the nitrogen sticking coefficient is changed. For the lower and higher V/IIIBEP ratios the PL wavelength is red-shifted or blue-shifted, respectively. The XRD results indicate that the nitrogen incorporation into the group-V sub-lattice is enhanced at low As pressures and reduced at high As pressures. The PL behaviour can thus be understood as a competition between As and N adatoms in occupying anion lattice sites.

    AB - GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures have been studied using photoluminescence (PL), X-ray diffraction (XRD) and secondary-ion mass spectrometry (SIMS). The best optical properties are achieved with the V/III beam equivalent pressure ratio (V/IIIBEP) of 10. The PL emission wavelength remains unchanged for 8⩽V/IIIBEP⩽12, suggesting that within this range neither the alloy composition nor the nitrogen sticking coefficient is changed. For the lower and higher V/IIIBEP ratios the PL wavelength is red-shifted or blue-shifted, respectively. The XRD results indicate that the nitrogen incorporation into the group-V sub-lattice is enhanced at low As pressures and reduced at high As pressures. The PL behaviour can thus be understood as a competition between As and N adatoms in occupying anion lattice sites.

    KW - photoluminescence

    KW - molecular beam epitaxy

    KW - quantum wells

    KW - dilute nitride alloys

    KW - gallium

    KW - GaAs

    U2 - 10.1016/j.physe.2005.12.050

    DO - 10.1016/j.physe.2005.12.050

    M3 - Article

    VL - 32

    SP - 266

    EP - 269

    JO - Physica E: Low-Dimensional Systems and Nanostructures

    JF - Physica E: Low-Dimensional Systems and Nanostructures

    SN - 1386-9477

    IS - 1-2

    ER -