Photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures

T. Hakkarainen (Corresponding Author), E.-M. Pavelescu, Jari Likonen

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)

    Abstract

    GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures have been studied using photoluminescence (PL), X-ray diffraction (XRD) and secondary-ion mass spectrometry (SIMS). The best optical properties are achieved with the V/III beam equivalent pressure ratio (V/IIIBEP) of 10. The PL emission wavelength remains unchanged for 8⩽V/IIIBEP⩽12, suggesting that within this range neither the alloy composition nor the nitrogen sticking coefficient is changed. For the lower and higher V/IIIBEP ratios the PL wavelength is red-shifted or blue-shifted, respectively. The XRD results indicate that the nitrogen incorporation into the group-V sub-lattice is enhanced at low As pressures and reduced at high As pressures. The PL behaviour can thus be understood as a competition between As and N adatoms in occupying anion lattice sites.
    Original languageEnglish
    Pages (from-to)266-269
    Number of pages4
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume32
    Issue number1-2
    DOIs
    Publication statusPublished - 2006
    MoE publication typeA1 Journal article-refereed
    Event12th International Conference on Modulated Semiconductor Structures, MSS12 - Albuquerque, United States
    Duration: 10 Jul 200515 Jul 2005

    Keywords

    • photoluminescence
    • molecular beam epitaxy
    • quantum wells
    • dilute nitride alloys
    • gallium
    • GaAs

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