Photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures

T. Hakkarainen (Corresponding Author), E.-M. Pavelescu, Jari Likonen

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)

Abstract

GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures have been studied using photoluminescence (PL), X-ray diffraction (XRD) and secondary-ion mass spectrometry (SIMS). The best optical properties are achieved with the V/III beam equivalent pressure ratio (V/IIIBEP) of 10. The PL emission wavelength remains unchanged for 8⩽V/IIIBEP⩽12, suggesting that within this range neither the alloy composition nor the nitrogen sticking coefficient is changed. For the lower and higher V/IIIBEP ratios the PL wavelength is red-shifted or blue-shifted, respectively. The XRD results indicate that the nitrogen incorporation into the group-V sub-lattice is enhanced at low As pressures and reduced at high As pressures. The PL behaviour can thus be understood as a competition between As and N adatoms in occupying anion lattice sites.
Original languageEnglish
Pages (from-to)266-269
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume32
Issue number1-2
DOIs
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed
Event12th International Conference on Modulated Semiconductor Structures - Albuquerque, United States
Duration: 10 Jul 200515 Jul 2005

Fingerprint

Arsenic
Molecular beam epitaxy
arsenic
Semiconductor quantum wells
Structural properties
Photoluminescence
molecular beam epitaxy
quantum wells
photoluminescence
pressure ratio
nitrogen
Nitrogen
X ray diffraction
Wavelength
diffraction
wavelengths
Adatoms
secondary ion mass spectrometry
adatoms
Secondary ion mass spectrometry

Keywords

  • photoluminescence
  • molecular beam epitaxy
  • quantum wells
  • dilute nitride alloys
  • gallium
  • GaAs

Cite this

@article{9ebc372a9607446883e8cbfe3d71fb00,
title = "Photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures",
abstract = "GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures have been studied using photoluminescence (PL), X-ray diffraction (XRD) and secondary-ion mass spectrometry (SIMS). The best optical properties are achieved with the V/III beam equivalent pressure ratio (V/IIIBEP) of 10. The PL emission wavelength remains unchanged for 8⩽V/IIIBEP⩽12, suggesting that within this range neither the alloy composition nor the nitrogen sticking coefficient is changed. For the lower and higher V/IIIBEP ratios the PL wavelength is red-shifted or blue-shifted, respectively. The XRD results indicate that the nitrogen incorporation into the group-V sub-lattice is enhanced at low As pressures and reduced at high As pressures. The PL behaviour can thus be understood as a competition between As and N adatoms in occupying anion lattice sites.",
keywords = "photoluminescence, molecular beam epitaxy, quantum wells, dilute nitride alloys, gallium, GaAs",
author = "T. Hakkarainen and E.-M. Pavelescu and Jari Likonen",
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doi = "10.1016/j.physe.2005.12.050",
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pages = "266--269",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
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}

Photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures. / Hakkarainen, T. (Corresponding Author); Pavelescu, E.-M.; Likonen, Jari.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 32, No. 1-2, 2006, p. 266-269.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures

AU - Hakkarainen, T.

AU - Pavelescu, E.-M.

AU - Likonen, Jari

PY - 2006

Y1 - 2006

N2 - GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures have been studied using photoluminescence (PL), X-ray diffraction (XRD) and secondary-ion mass spectrometry (SIMS). The best optical properties are achieved with the V/III beam equivalent pressure ratio (V/IIIBEP) of 10. The PL emission wavelength remains unchanged for 8⩽V/IIIBEP⩽12, suggesting that within this range neither the alloy composition nor the nitrogen sticking coefficient is changed. For the lower and higher V/IIIBEP ratios the PL wavelength is red-shifted or blue-shifted, respectively. The XRD results indicate that the nitrogen incorporation into the group-V sub-lattice is enhanced at low As pressures and reduced at high As pressures. The PL behaviour can thus be understood as a competition between As and N adatoms in occupying anion lattice sites.

AB - GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures have been studied using photoluminescence (PL), X-ray diffraction (XRD) and secondary-ion mass spectrometry (SIMS). The best optical properties are achieved with the V/III beam equivalent pressure ratio (V/IIIBEP) of 10. The PL emission wavelength remains unchanged for 8⩽V/IIIBEP⩽12, suggesting that within this range neither the alloy composition nor the nitrogen sticking coefficient is changed. For the lower and higher V/IIIBEP ratios the PL wavelength is red-shifted or blue-shifted, respectively. The XRD results indicate that the nitrogen incorporation into the group-V sub-lattice is enhanced at low As pressures and reduced at high As pressures. The PL behaviour can thus be understood as a competition between As and N adatoms in occupying anion lattice sites.

KW - photoluminescence

KW - molecular beam epitaxy

KW - quantum wells

KW - dilute nitride alloys

KW - gallium

KW - GaAs

U2 - 10.1016/j.physe.2005.12.050

DO - 10.1016/j.physe.2005.12.050

M3 - Article

VL - 32

SP - 266

EP - 269

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 1-2

ER -