Photoluminescence of buried InGaAs grown on nanoscale InP islands by MOVPE

H. Lipsanen, Jouni Ahopelto, T. Koljonen, M Sopanen

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Pages (from-to)988-989
Number of pages2
JournalJournal of Crystal Growth
Volume145
Issue number1-4
DOIs
Publication statusPublished - 1994
MoE publication typeA1 Journal article-refereed

Cite this

Lipsanen, H. ; Ahopelto, Jouni ; Koljonen, T. ; Sopanen, M. / Photoluminescence of buried InGaAs grown on nanoscale InP islands by MOVPE. In: Journal of Crystal Growth. 1994 ; Vol. 145, No. 1-4. pp. 988-989.
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author = "H. Lipsanen and Jouni Ahopelto and T. Koljonen and M Sopanen",
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doi = "10.1016/0022-0248(94)91182-7",
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Photoluminescence of buried InGaAs grown on nanoscale InP islands by MOVPE. / Lipsanen, H.; Ahopelto, Jouni; Koljonen, T.; Sopanen, M.

In: Journal of Crystal Growth, Vol. 145, No. 1-4, 1994, p. 988-989.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Photoluminescence of buried InGaAs grown on nanoscale InP islands by MOVPE

AU - Lipsanen, H.

AU - Ahopelto, Jouni

AU - Koljonen, T.

AU - Sopanen, M

PY - 1994

Y1 - 1994

U2 - 10.1016/0022-0248(94)91182-7

DO - 10.1016/0022-0248(94)91182-7

M3 - Article

VL - 145

SP - 988

EP - 989

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -