Photoluminescence quenching in a polymer thin-film field-effect luministor

Peter Dyreklev, Olle Inganäs, Jari Paloheimo, Henrik Stubb

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Abstract

We report the observation of photoluminescence quenching in thin films of poly(3‐hexylthiophene) and Langmuir–Blodgett films of poly(3‐hexylthiophene)/arachidic acid by the injection of positive charges in the polymer. Charge injection was made in a polymer field effect transistor, used in what we name the luministor mode. The quenching is discussed in terms of polarons/bipolarons acting as recombination centra for the excitons, suppressing the photoluminescence. The inverse phenomenon, luminescence enhancement by depletion of charges, has also been achieved.
Original languageEnglish
Pages (from-to)2816-2820
Number of pages5
JournalJournal of Applied Physics
Volume71
Issue number6
DOIs
Publication statusPublished - 1992
MoE publication typeA1 Journal article-refereed

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quenching
injection
photoluminescence
polymers
polarons
thin films
depletion
field effect transistors
excitons
luminescence
acids
augmentation

Cite this

Dyreklev, Peter ; Inganäs, Olle ; Paloheimo, Jari ; Stubb, Henrik. / Photoluminescence quenching in a polymer thin-film field-effect luministor. In: Journal of Applied Physics. 1992 ; Vol. 71, No. 6. pp. 2816-2820.
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abstract = "We report the observation of photoluminescence quenching in thin films of poly(3‐hexylthiophene) and Langmuir–Blodgett films of poly(3‐hexylthiophene)/arachidic acid by the injection of positive charges in the polymer. Charge injection was made in a polymer field effect transistor, used in what we name the luministor mode. The quenching is discussed in terms of polarons/bipolarons acting as recombination centra for the excitons, suppressing the photoluminescence. The inverse phenomenon, luminescence enhancement by depletion of charges, has also been achieved.",
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Dyreklev, P, Inganäs, O, Paloheimo, J & Stubb, H 1992, 'Photoluminescence quenching in a polymer thin-film field-effect luministor', Journal of Applied Physics, vol. 71, no. 6, pp. 2816-2820. https://doi.org/10.1063/1.351010

Photoluminescence quenching in a polymer thin-film field-effect luministor. / Dyreklev, Peter; Inganäs, Olle; Paloheimo, Jari; Stubb, Henrik.

In: Journal of Applied Physics, Vol. 71, No. 6, 1992, p. 2816-2820.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Photoluminescence quenching in a polymer thin-film field-effect luministor

AU - Dyreklev, Peter

AU - Inganäs, Olle

AU - Paloheimo, Jari

AU - Stubb, Henrik

N1 - Project code: PUO9021

PY - 1992

Y1 - 1992

N2 - We report the observation of photoluminescence quenching in thin films of poly(3‐hexylthiophene) and Langmuir–Blodgett films of poly(3‐hexylthiophene)/arachidic acid by the injection of positive charges in the polymer. Charge injection was made in a polymer field effect transistor, used in what we name the luministor mode. The quenching is discussed in terms of polarons/bipolarons acting as recombination centra for the excitons, suppressing the photoluminescence. The inverse phenomenon, luminescence enhancement by depletion of charges, has also been achieved.

AB - We report the observation of photoluminescence quenching in thin films of poly(3‐hexylthiophene) and Langmuir–Blodgett films of poly(3‐hexylthiophene)/arachidic acid by the injection of positive charges in the polymer. Charge injection was made in a polymer field effect transistor, used in what we name the luministor mode. The quenching is discussed in terms of polarons/bipolarons acting as recombination centra for the excitons, suppressing the photoluminescence. The inverse phenomenon, luminescence enhancement by depletion of charges, has also been achieved.

U2 - 10.1063/1.351010

DO - 10.1063/1.351010

M3 - Article

VL - 71

SP - 2816

EP - 2820

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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