Photomic Devices and Methods of Using and Making Photonic Devices

Purnawirman Purnawirman (Inventor), Michael R Watts (Inventor), Ehsan Shah Hosseini (Inventor), Jonathan B Bradley (Inventor), Jie Sun (Inventor), Matteo Cherchi (Inventor)

Research output: PatentResearch

Abstract

Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

Original languageEnglish
Patent numberUS2018131155 A1
IPCH01S 3/23
Priority date28/09/17
Publication statusPublished - 10 May 2018
MoE publication typeNot Eligible

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erbium
Bragg reflectors
photonics
pumps
waveguides
lasers
inventions
waveguide lasers
C band
ultrahigh frequencies
laser cavities
silicon nitrides
wavelengths
submerging
lasing
ridges
lithography
aluminum oxides
wafers
gratings

Cite this

Purnawirman, P., Watts, M. R., Hosseini, E. S., Bradley, J. B., Sun, J., & Cherchi, M. (2018). IPC No. H01S 3/23. Photomic Devices and Methods of Using and Making Photonic Devices. (Patent No. US2018131155 A1).
Purnawirman, Purnawirman (Inventor) ; Watts, Michael R (Inventor) ; Hosseini, Ehsan Shah (Inventor) ; Bradley, Jonathan B (Inventor) ; Sun, Jie (Inventor) ; Cherchi, Matteo (Inventor). / Photomic Devices and Methods of Using and Making Photonic Devices. IPC No.: H01S 3/23. Patent No.: US2018131155 A1.
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title = "Photomic Devices and Methods of Using and Making Photonic Devices",
abstract = "Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89{\%}) and 1.5 μm laser (87{\%}) wavelengths with a pump-laser intensity overlap of over 93{\%}. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).",
author = "Purnawirman Purnawirman and Watts, {Michael R} and Hosseini, {Ehsan Shah} and Bradley, {Jonathan B} and Jie Sun and Matteo Cherchi",
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Purnawirman, P, Watts, MR, Hosseini, ES, Bradley, JB, Sun, J & Cherchi, M 2018, Photomic Devices and Methods of Using and Making Photonic Devices, Patent No. US2018131155 A1, IPC No. H01S 3/23.

Photomic Devices and Methods of Using and Making Photonic Devices. / Purnawirman, Purnawirman (Inventor); Watts, Michael R (Inventor); Hosseini, Ehsan Shah (Inventor); Bradley, Jonathan B (Inventor); Sun, Jie (Inventor); Cherchi, Matteo (Inventor).

IPC No.: H01S 3/23. Patent No.: US2018131155 A1.

Research output: PatentResearch

TY - PAT

T1 - Photomic Devices and Methods of Using and Making Photonic Devices

AU - Purnawirman, Purnawirman

AU - Watts, Michael R

AU - Hosseini, Ehsan Shah

AU - Bradley, Jonathan B

AU - Sun, Jie

AU - Cherchi, Matteo

PY - 2018/5/10

Y1 - 2018/5/10

N2 - Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

AB - Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

M3 - Patent

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Purnawirman P, Watts MR, Hosseini ES, Bradley JB, Sun J, Cherchi M, inventors. Photomic Devices and Methods of Using and Making Photonic Devices. H01S 3/23. 2018 May 10.