Abstract
Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).
| Original language | English |
|---|---|
| Patent number | US2018131155 A1 |
| IPC | H01S 3/23 |
| Priority date | 28/09/17 |
| Publication status | Published - 10 May 2018 |
| MoE publication type | Not Eligible |
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Photomic Devices and Methods of Using and Making Photonic Devices. / Purnawirman, Purnawirman (Inventor); Watts, Michael R (Inventor); Hosseini, Ehsan Shah (Inventor); Bradley, Jonathan B (Inventor); Sun, Jie (Inventor); Cherchi, Matteo (Inventor).
IPC No.: H01S 3/23. Patent No.: US2018131155 A1.Research output: Patent › Research
TY - PAT
T1 - Photomic Devices and Methods of Using and Making Photonic Devices
AU - Purnawirman, Purnawirman
AU - Watts, Michael R
AU - Hosseini, Ehsan Shah
AU - Bradley, Jonathan B
AU - Sun, Jie
AU - Cherchi, Matteo
PY - 2018/5/10
Y1 - 2018/5/10
N2 - Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).
AB - Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).
M3 - Patent
M1 - US2018131155 A1
ER -