Photomic Devices and Methods of Using and Making Photonic Devices

Purnawirman Purnawirman (Inventor), Michael R Watts (Inventor), Ehsan Shah Hosseini (Inventor), Jonathan B Bradley (Inventor), Jie Sun (Inventor), Matteo Cherchi (Inventor)

    Research output: PatentPatent application

    Abstract

    Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

    Original languageEnglish
    Patent numberUS2018131155 A1
    IPCH01S 3/23
    Priority date28/09/17
    Publication statusPublished - 10 May 2018
    MoE publication typeNot Eligible

      Fingerprint

    Cite this

    Purnawirman, P., Watts, M. R., Hosseini, E. S., Bradley, J. B., Sun, J., & Cherchi, M. (2018). IPC No. H01S 3/23. Photomic Devices and Methods of Using and Making Photonic Devices. (Patent No. US2018131155 A1).