Photomic Devices and Methods of Using and Making Photonic Devices

Purnawirman Purnawirman; Michael R Watts; Ehsan Shah Hosseini; Jonathan B Bradley; Jie Sun; Matteo Cherchi

Photomic Devices and Methods of Using and Making Photonic Devices

Purnawirman Purnawirman (Inventor), Michael R Watts (Inventor), Ehsan Shah Hosseini (Inventor), Jonathan B Bradley (Inventor), Jie Sun (Inventor), Matteo Cherchi (Inventor)

Research output: Patent › Patent application

Abstract

Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

Original language	English
Patent number	US2018131155 A1
IPC	H01S 3/23
Priority date	28/09/17
Publication status	Published - 10 May 2018
MoE publication type	Not Eligible

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Purnawirman, P., Watts, M. R., Hosseini, E. S., Bradley, J. B., Sun, J., & Cherchi, M. (2018). IPC No. H01S 3/23. Photomic Devices and Methods of Using and Making Photonic Devices. (Patent No. US2018131155 A1).

@misc{fb998ce9b20e4591a13ac59f365f5638,

title = "Photomic Devices and Methods of Using and Making Photonic Devices",

abstract = "Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).",

author = "Purnawirman Purnawirman and Watts, {Michael R} and Hosseini, {Ehsan Shah} and Bradley, {Jonathan B} and Jie Sun and Matteo Cherchi",

year = "2018",

month = may

day = "10",

language = "English",

type = "Patent",

note = "US2018131155 A1; H01S 3/23",

}

TY - PAT

T1 - Photomic Devices and Methods of Using and Making Photonic Devices

AU - Purnawirman, Purnawirman

AU - Watts, Michael R

AU - Hosseini, Ehsan Shah

AU - Bradley, Jonathan B

AU - Sun, Jie

AU - Cherchi, Matteo

PY - 2018/5/10

Y1 - 2018/5/10

N2 - Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

AB - Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

M3 - Patent

M1 - US2018131155 A1

ER -