Photon-enhanced thermionic emission solar cells based on Si, GaAs, and InP

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

    Abstract

    Photovoltaic energy conversion at high temperatures can be realized with photon-enhanced-thermionic-emission (PETE) solar cells. This characteristic allows them to be combined in tandem with thermal concentrated solar power systems. The cathode, which absorbs photons and works as the emitter electrode, is a crucial component of the PETE device. We investigate the utilization of Si, GaAs, and InP as the cathode materials using numerical device models. Simulated absorber characteristics and device efficiencies are presented and discussed. Our simulations show that Si, GaAs, and InP are all promising materials for PETE solar cells, if surface recombination, electron affinities, and thermal stability of these materials can be optimized. GaAs and InP show higher efficiencies than Si due to their higher band gaps and strong photon absorption characteristics.
    Original languageEnglish
    Title of host publicationProceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition
    PublisherWIP Wirtschaft und Infrastruktur GmbH & Co. Planungs KG
    Pages331-333
    ISBN (Print)3-936338-34-5
    DOIs
    Publication statusPublished - 2014
    MoE publication typeB3 Non-refereed article in conference proceedings
    Event29th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2014 - Amsterdam, Netherlands
    Duration: 22 Sep 201426 Sep 2014
    Conference number: 29

    Conference

    Conference29th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2014
    Abbreviated titleEU PVSEC 2014
    CountryNetherlands
    CityAmsterdam
    Period22/09/1426/09/14

    Keywords

    • photon enhanced thermionic emission
    • modelling
    • III-V semiconductors
    • silicon
    • apsorption

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