Abstract
Photovoltaic energy conversion at high temperatures can
be realized with photon-enhanced-thermionic-emission
(PETE) solar cells. This characteristic allows them to be
combined in tandem with thermal concentrated solar power
systems. The cathode, which absorbs photons and works as
the emitter electrode, is a crucial component of the PETE
device. We investigate the utilization of Si, GaAs, and
InP as the cathode materials using numerical device
models. Simulated absorber characteristics and device
efficiencies are presented and discussed. Our simulations
show that Si, GaAs, and InP are all promising materials
for PETE solar cells, if surface recombination, electron
affinities, and thermal stability of these materials can
be optimized. GaAs and InP show higher efficiencies than
Si due to their higher band gaps and strong photon
absorption characteristics.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition |
| Publisher | WIP Wirtschaft und Infrastruktur GmbH & Co. Planungs KG |
| Pages | 331-333 |
| ISBN (Print) | 978-3-936338-34-8 |
| DOIs | |
| Publication status | Published - 2014 |
| MoE publication type | B3 Non-refereed article in conference proceedings |
| Event | 29th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2014 - Amsterdam, Netherlands Duration: 22 Sept 2014 → 26 Sept 2014 Conference number: 29 |
Conference
| Conference | 29th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2014 |
|---|---|
| Abbreviated title | EU PVSEC 2014 |
| Country/Territory | Netherlands |
| City | Amsterdam |
| Period | 22/09/14 → 26/09/14 |
Keywords
- photon enhanced thermionic emission
- modelling
- III-V semiconductors
- silicon
- apsorption
