Photon-enhanced thermionic emission solar cells based on Si, GaAs, and InP

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

    Abstract

    Photovoltaic energy conversion at high temperatures can be realized with photon-enhanced-thermionic-emission (PETE) solar cells. This characteristic allows them to be combined in tandem with thermal concentrated solar power systems. The cathode, which absorbs photons and works as the emitter electrode, is a crucial component of the PETE device. We investigate the utilization of Si, GaAs, and InP as the cathode materials using numerical device models. Simulated absorber characteristics and device efficiencies are presented and discussed. Our simulations show that Si, GaAs, and InP are all promising materials for PETE solar cells, if surface recombination, electron affinities, and thermal stability of these materials can be optimized. GaAs and InP show higher efficiencies than Si due to their higher band gaps and strong photon absorption characteristics.
    Original languageEnglish
    Title of host publicationProceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition
    Pages331-333
    DOIs
    Publication statusPublished - 2014
    MoE publication typeB3 Non-refereed article in conference proceedings
    Event29th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2014 - Amsterdam, Netherlands
    Duration: 22 Sep 201426 Sep 2014
    Conference number: 29

    Conference

    Conference29th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2014
    Abbreviated titleEU PVSEC 2014
    CountryNetherlands
    CityAmsterdam
    Period22/09/1426/09/14

    Fingerprint

    thermionic emission
    solar cells
    photons
    cathodes
    energy conversion
    electron affinity
    absorbers
    emitters
    thermal stability
    electrodes
    simulation

    Keywords

    • photon enhanced thermionic emission
    • modelling
    • III-V semiconductors
    • silicon
    • apsorption

    Cite this

    Varpula, A., & Prunnila, M. (2014). Photon-enhanced thermionic emission solar cells based on Si, GaAs, and InP. In Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition (pp. 331-333) https://doi.org/10.4229/EUPVSEC20142014-1BV.7.62
    Varpula, Aapo ; Prunnila, Mika. / Photon-enhanced thermionic emission solar cells based on Si, GaAs, and InP. Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition. 2014. pp. 331-333
    @inproceedings{22013dd9352245beb7fedbc740db6683,
    title = "Photon-enhanced thermionic emission solar cells based on Si, GaAs, and InP",
    abstract = "Photovoltaic energy conversion at high temperatures can be realized with photon-enhanced-thermionic-emission (PETE) solar cells. This characteristic allows them to be combined in tandem with thermal concentrated solar power systems. The cathode, which absorbs photons and works as the emitter electrode, is a crucial component of the PETE device. We investigate the utilization of Si, GaAs, and InP as the cathode materials using numerical device models. Simulated absorber characteristics and device efficiencies are presented and discussed. Our simulations show that Si, GaAs, and InP are all promising materials for PETE solar cells, if surface recombination, electron affinities, and thermal stability of these materials can be optimized. GaAs and InP show higher efficiencies than Si due to their higher band gaps and strong photon absorption characteristics.",
    keywords = "photon enhanced thermionic emission, modelling, III-V semiconductors, silicon, apsorption",
    author = "Aapo Varpula and Mika Prunnila",
    note = "Project code: 74074",
    year = "2014",
    doi = "10.4229/EUPVSEC20142014-1BV.7.62",
    language = "English",
    isbn = "3-936338-34-5",
    pages = "331--333",
    booktitle = "Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition",

    }

    Varpula, A & Prunnila, M 2014, Photon-enhanced thermionic emission solar cells based on Si, GaAs, and InP. in Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition. pp. 331-333, 29th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2014, Amsterdam, Netherlands, 22/09/14. https://doi.org/10.4229/EUPVSEC20142014-1BV.7.62

    Photon-enhanced thermionic emission solar cells based on Si, GaAs, and InP. / Varpula, Aapo; Prunnila, Mika.

    Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition. 2014. p. 331-333.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

    TY - GEN

    T1 - Photon-enhanced thermionic emission solar cells based on Si, GaAs, and InP

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    AU - Prunnila, Mika

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    Y1 - 2014

    N2 - Photovoltaic energy conversion at high temperatures can be realized with photon-enhanced-thermionic-emission (PETE) solar cells. This characteristic allows them to be combined in tandem with thermal concentrated solar power systems. The cathode, which absorbs photons and works as the emitter electrode, is a crucial component of the PETE device. We investigate the utilization of Si, GaAs, and InP as the cathode materials using numerical device models. Simulated absorber characteristics and device efficiencies are presented and discussed. Our simulations show that Si, GaAs, and InP are all promising materials for PETE solar cells, if surface recombination, electron affinities, and thermal stability of these materials can be optimized. GaAs and InP show higher efficiencies than Si due to their higher band gaps and strong photon absorption characteristics.

    AB - Photovoltaic energy conversion at high temperatures can be realized with photon-enhanced-thermionic-emission (PETE) solar cells. This characteristic allows them to be combined in tandem with thermal concentrated solar power systems. The cathode, which absorbs photons and works as the emitter electrode, is a crucial component of the PETE device. We investigate the utilization of Si, GaAs, and InP as the cathode materials using numerical device models. Simulated absorber characteristics and device efficiencies are presented and discussed. Our simulations show that Si, GaAs, and InP are all promising materials for PETE solar cells, if surface recombination, electron affinities, and thermal stability of these materials can be optimized. GaAs and InP show higher efficiencies than Si due to their higher band gaps and strong photon absorption characteristics.

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    KW - modelling

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    KW - silicon

    KW - apsorption

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    Varpula A, Prunnila M. Photon-enhanced thermionic emission solar cells based on Si, GaAs, and InP. In Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition. 2014. p. 331-333 https://doi.org/10.4229/EUPVSEC20142014-1BV.7.62