Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices

Wonjae Kim, Sanna Arpiainen, Hui Xue, Miika Soikkeli, Mei Qi, Zhipei Sun, Harri Lipsanen, Ferney A. Chaves, David Jiménez, Mika Prunnila

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Because of their extraordinary physical properties, low-dimensional materials including graphene and gallium selenide (GaSe) are promising for future electronic and optoelectronic applications, particularly in transparent-flexible photodetectors. Currently, the photodetectors working at the near-infrared spectral range are highly indispensable in optical communications. However, the current photodetector architectures are typically complex, and it is normally difficult to control the architecture parameters. Here, we report graphene–GaSe heterojunction-based field-effect transistors with broadband photodetection from 730–1550 nm. Chemical-vapor-deposited graphene was employed as transparent gate and contact electrodes with tunable resistance, which enables effective photocurrent generation in the heterojunctions. The photoresponsivity was shown from 10 to 0.05 mA/W in the near-infrared region under the gate control. To understand behavior of the transistor, we analyzed the results via simulation performed using a model for the gate-tunable graphene–semiconductor heterojunction where possible Fermi level pinning effect is considered.
Original languageEnglish
Pages (from-to)3895–3902
Number of pages8
JournalACS Applied Nano Materials
Volume1
Issue number8
DOIs
Publication statusPublished - 31 Jul 2018
MoE publication typeNot Eligible

Fingerprint

gallium selenides
heterojunction devices
photometers
heterojunctions
graphene
selenides
photocurrents
optical communication
transistors
field effect transistors
physical properties
vapors
broadband
electrodes
electronics
simulation

Keywords

  • GaSe
  • graphene
  • heterojunction
  • photodetector
  • Schottky

Cite this

Kim, Wonjae ; Arpiainen, Sanna ; Xue, Hui ; Soikkeli, Miika ; Qi, Mei ; Sun, Zhipei ; Lipsanen, Harri ; Chaves, Ferney A. ; Jiménez, David ; Prunnila, Mika. / Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices. In: ACS Applied Nano Materials. 2018 ; Vol. 1, No. 8. pp. 3895–3902.
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abstract = "Because of their extraordinary physical properties, low-dimensional materials including graphene and gallium selenide (GaSe) are promising for future electronic and optoelectronic applications, particularly in transparent-flexible photodetectors. Currently, the photodetectors working at the near-infrared spectral range are highly indispensable in optical communications. However, the current photodetector architectures are typically complex, and it is normally difficult to control the architecture parameters. Here, we report graphene–GaSe heterojunction-based field-effect transistors with broadband photodetection from 730–1550 nm. Chemical-vapor-deposited graphene was employed as transparent gate and contact electrodes with tunable resistance, which enables effective photocurrent generation in the heterojunctions. The photoresponsivity was shown from 10 to 0.05 mA/W in the near-infrared region under the gate control. To understand behavior of the transistor, we analyzed the results via simulation performed using a model for the gate-tunable graphene–semiconductor heterojunction where possible Fermi level pinning effect is considered.",
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Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices. / Kim, Wonjae; Arpiainen, Sanna; Xue, Hui; Soikkeli, Miika; Qi, Mei; Sun, Zhipei; Lipsanen, Harri; Chaves, Ferney A.; Jiménez, David; Prunnila, Mika.

In: ACS Applied Nano Materials, Vol. 1, No. 8, 31.07.2018, p. 3895–3902.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Kim, Wonjae

AU - Arpiainen, Sanna

AU - Xue, Hui

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AU - Qi, Mei

AU - Sun, Zhipei

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AU - Chaves, Ferney A.

AU - Jiménez, David

AU - Prunnila, Mika

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N2 - Because of their extraordinary physical properties, low-dimensional materials including graphene and gallium selenide (GaSe) are promising for future electronic and optoelectronic applications, particularly in transparent-flexible photodetectors. Currently, the photodetectors working at the near-infrared spectral range are highly indispensable in optical communications. However, the current photodetector architectures are typically complex, and it is normally difficult to control the architecture parameters. Here, we report graphene–GaSe heterojunction-based field-effect transistors with broadband photodetection from 730–1550 nm. Chemical-vapor-deposited graphene was employed as transparent gate and contact electrodes with tunable resistance, which enables effective photocurrent generation in the heterojunctions. The photoresponsivity was shown from 10 to 0.05 mA/W in the near-infrared region under the gate control. To understand behavior of the transistor, we analyzed the results via simulation performed using a model for the gate-tunable graphene–semiconductor heterojunction where possible Fermi level pinning effect is considered.

AB - Because of their extraordinary physical properties, low-dimensional materials including graphene and gallium selenide (GaSe) are promising for future electronic and optoelectronic applications, particularly in transparent-flexible photodetectors. Currently, the photodetectors working at the near-infrared spectral range are highly indispensable in optical communications. However, the current photodetector architectures are typically complex, and it is normally difficult to control the architecture parameters. Here, we report graphene–GaSe heterojunction-based field-effect transistors with broadband photodetection from 730–1550 nm. Chemical-vapor-deposited graphene was employed as transparent gate and contact electrodes with tunable resistance, which enables effective photocurrent generation in the heterojunctions. The photoresponsivity was shown from 10 to 0.05 mA/W in the near-infrared region under the gate control. To understand behavior of the transistor, we analyzed the results via simulation performed using a model for the gate-tunable graphene–semiconductor heterojunction where possible Fermi level pinning effect is considered.

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