Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices

Wonjae Kim, Sanna Arpiainen, Hui Xue, Miika Soikkeli, Mei Qi, Zhipei Sun, Harri Lipsanen, Ferney A. Chaves, David Jiménez, Mika Prunnila

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)

    Abstract

    Because of their extraordinary physical properties, low-dimensional materials including graphene and gallium selenide (GaSe) are promising for future electronic and optoelectronic applications, particularly in transparent-flexible photodetectors. Currently, the photodetectors working at the near-infrared spectral range are highly indispensable in optical communications. However, the current photodetector architectures are typically complex, and it is normally difficult to control the architecture parameters. Here, we report graphene–GaSe heterojunction-based field-effect transistors with broadband photodetection from 730–1550 nm. Chemical-vapor-deposited graphene was employed as transparent gate and contact electrodes with tunable resistance, which enables effective photocurrent generation in the heterojunctions. The photoresponsivity was shown from 10 to 0.05 mA/W in the near-infrared region under the gate control. To understand behavior of the transistor, we analyzed the results via simulation performed using a model for the gate-tunable graphene–semiconductor heterojunction where possible Fermi level pinning effect is considered.
    Original languageEnglish
    Pages (from-to)3895–3902
    Number of pages8
    JournalACS Applied Nano Materials
    Volume1
    Issue number8
    DOIs
    Publication statusPublished - 24 Aug 2018
    MoE publication typeNot Eligible

    Fingerprint

    gallium selenides
    heterojunction devices
    photometers
    heterojunctions
    graphene
    selenides
    photocurrents
    optical communication
    transistors
    field effect transistors
    physical properties
    vapors
    broadband
    electrodes
    electronics
    simulation

    Keywords

    • GaSe
    • graphene
    • heterojunction
    • photodetector
    • Schottky

    Cite this

    Kim, Wonjae ; Arpiainen, Sanna ; Xue, Hui ; Soikkeli, Miika ; Qi, Mei ; Sun, Zhipei ; Lipsanen, Harri ; Chaves, Ferney A. ; Jiménez, David ; Prunnila, Mika. / Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices. In: ACS Applied Nano Materials. 2018 ; Vol. 1, No. 8. pp. 3895–3902.
    @article{f6f77ec1d79943589c24b674f24f2f17,
    title = "Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices",
    abstract = "Because of their extraordinary physical properties, low-dimensional materials including graphene and gallium selenide (GaSe) are promising for future electronic and optoelectronic applications, particularly in transparent-flexible photodetectors. Currently, the photodetectors working at the near-infrared spectral range are highly indispensable in optical communications. However, the current photodetector architectures are typically complex, and it is normally difficult to control the architecture parameters. Here, we report graphene–GaSe heterojunction-based field-effect transistors with broadband photodetection from 730–1550 nm. Chemical-vapor-deposited graphene was employed as transparent gate and contact electrodes with tunable resistance, which enables effective photocurrent generation in the heterojunctions. The photoresponsivity was shown from 10 to 0.05 mA/W in the near-infrared region under the gate control. To understand behavior of the transistor, we analyzed the results via simulation performed using a model for the gate-tunable graphene–semiconductor heterojunction where possible Fermi level pinning effect is considered.",
    keywords = "GaSe, graphene, heterojunction, photodetector, Schottky",
    author = "Wonjae Kim and Sanna Arpiainen and Hui Xue and Miika Soikkeli and Mei Qi and Zhipei Sun and Harri Lipsanen and Chaves, {Ferney A.} and David Jim{\'e}nez and Mika Prunnila",
    year = "2018",
    month = "8",
    day = "24",
    doi = "10.1021/acsanm.8b00684",
    language = "English",
    volume = "1",
    pages = "3895–3902",
    journal = "ACS Applied Nano Materials",
    issn = "2574-0970",
    publisher = "American Chemical Society ACS",
    number = "8",

    }

    Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices. / Kim, Wonjae; Arpiainen, Sanna; Xue, Hui; Soikkeli, Miika; Qi, Mei; Sun, Zhipei; Lipsanen, Harri; Chaves, Ferney A.; Jiménez, David; Prunnila, Mika.

    In: ACS Applied Nano Materials, Vol. 1, No. 8, 24.08.2018, p. 3895–3902.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices

    AU - Kim, Wonjae

    AU - Arpiainen, Sanna

    AU - Xue, Hui

    AU - Soikkeli, Miika

    AU - Qi, Mei

    AU - Sun, Zhipei

    AU - Lipsanen, Harri

    AU - Chaves, Ferney A.

    AU - Jiménez, David

    AU - Prunnila, Mika

    PY - 2018/8/24

    Y1 - 2018/8/24

    N2 - Because of their extraordinary physical properties, low-dimensional materials including graphene and gallium selenide (GaSe) are promising for future electronic and optoelectronic applications, particularly in transparent-flexible photodetectors. Currently, the photodetectors working at the near-infrared spectral range are highly indispensable in optical communications. However, the current photodetector architectures are typically complex, and it is normally difficult to control the architecture parameters. Here, we report graphene–GaSe heterojunction-based field-effect transistors with broadband photodetection from 730–1550 nm. Chemical-vapor-deposited graphene was employed as transparent gate and contact electrodes with tunable resistance, which enables effective photocurrent generation in the heterojunctions. The photoresponsivity was shown from 10 to 0.05 mA/W in the near-infrared region under the gate control. To understand behavior of the transistor, we analyzed the results via simulation performed using a model for the gate-tunable graphene–semiconductor heterojunction where possible Fermi level pinning effect is considered.

    AB - Because of their extraordinary physical properties, low-dimensional materials including graphene and gallium selenide (GaSe) are promising for future electronic and optoelectronic applications, particularly in transparent-flexible photodetectors. Currently, the photodetectors working at the near-infrared spectral range are highly indispensable in optical communications. However, the current photodetector architectures are typically complex, and it is normally difficult to control the architecture parameters. Here, we report graphene–GaSe heterojunction-based field-effect transistors with broadband photodetection from 730–1550 nm. Chemical-vapor-deposited graphene was employed as transparent gate and contact electrodes with tunable resistance, which enables effective photocurrent generation in the heterojunctions. The photoresponsivity was shown from 10 to 0.05 mA/W in the near-infrared region under the gate control. To understand behavior of the transistor, we analyzed the results via simulation performed using a model for the gate-tunable graphene–semiconductor heterojunction where possible Fermi level pinning effect is considered.

    KW - GaSe

    KW - graphene

    KW - heterojunction

    KW - photodetector

    KW - Schottky

    UR - http://www.scopus.com/inward/record.url?scp=85061626531&partnerID=8YFLogxK

    U2 - 10.1021/acsanm.8b00684

    DO - 10.1021/acsanm.8b00684

    M3 - Article

    C2 - 30259010

    VL - 1

    SP - 3895

    EP - 3902

    JO - ACS Applied Nano Materials

    JF - ACS Applied Nano Materials

    SN - 2574-0970

    IS - 8

    ER -