Physical IGBT model for circuit simulations

Mikael Andersson; Marko Grönlund; Pekka Kuivalainen

doi:10.1007/978-3-7091-6657-4_84

Physical IGBT model for circuit simulations

Mikael Andersson, Marko Grönlund, Pekka Kuivalainen

VTT Technical Research Centre of Finland

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

An improved analytical model for IGB power transistors has been developed for circuit simulators. Special attention is paid to the physical modeling of the short channel in the DMOS branch and the buffer layer near the anode in IGBT device structures. Good agreement between simulated and measured data has been obtained.

Original language	English
Title of host publication	Simulation of Semiconductor Devices and Processes
Publisher	Springer
Pages	341-344
Volume	5
ISBN (Electronic)	978-3-7091-6657-4
ISBN (Print)	978-3-7091-7372-5
DOIs	https://doi.org/10.1007/978-3-7091-6657-4_84
Publication status	Published - 1993
MoE publication type	A4 Article in a conference publication
Event	Fifth International Conference on Simulation of Semiconductor Devices and Processes (SISDEP 93) - Vienna, Austria Duration: 7 Sept 1993 → 9 Sept 1993

Publication series

Series	Simulation of Semiconductor Devices and Processes

Conference

Conference	Fifth International Conference on Simulation of Semiconductor Devices and Processes (SISDEP 93)
Country/Territory	Austria
City	Vienna
Period	7/09/93 → 9/09/93

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10.1007/978-3-7091-6657-4_84

Cite this

@inproceedings{4085eb6cb0954fa3baa5d79ecc257c68,

title = "Physical IGBT model for circuit simulations",

abstract = "An improved analytical model for IGB power transistors has been developed for circuit simulators. Special attention is paid to the physical modeling of the short channel in the DMOS branch and the buffer layer near the anode in IGBT device structures. Good agreement between simulated and measured data has been obtained.",

author = "Mikael Andersson and Marko Gr{\"o}nlund and Pekka Kuivalainen",

year = "1993",

doi = "10.1007/978-3-7091-6657-4_84",

language = "English",

isbn = "978-3-7091-7372-5",

volume = "5",

series = "Simulation of Semiconductor Devices and Processes",

publisher = "Springer",

pages = "341--344",

booktitle = "Simulation of Semiconductor Devices and Processes",

address = "Germany",

note = "Fifth International Conference on Simulation of Semiconductor Devices and Processes (SISDEP 93) ; Conference date: 07-09-1993 Through 09-09-1993",

}

Andersson, M, Grönlund, M & Kuivalainen, P 1993, Physical IGBT model for circuit simulations. in Simulation of Semiconductor Devices and Processes. vol. 5, Springer, Simulation of Semiconductor Devices and Processes, pp. 341-344, Fifth International Conference on Simulation of Semiconductor Devices and Processes (SISDEP 93), Vienna, Austria, 7/09/93. https://doi.org/10.1007/978-3-7091-6657-4_84

Physical IGBT model for circuit simulations. / Andersson, Mikael; Grönlund, Marko; Kuivalainen, Pekka.
Simulation of Semiconductor Devices and Processes. Vol. 5 Springer, 1993. p. 341-344 (Simulation of Semiconductor Devices and Processes).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Physical IGBT model for circuit simulations

AU - Andersson, Mikael

AU - Grönlund, Marko

AU - Kuivalainen, Pekka

PY - 1993

Y1 - 1993

N2 - An improved analytical model for IGB power transistors has been developed for circuit simulators. Special attention is paid to the physical modeling of the short channel in the DMOS branch and the buffer layer near the anode in IGBT device structures. Good agreement between simulated and measured data has been obtained.

AB - An improved analytical model for IGB power transistors has been developed for circuit simulators. Special attention is paid to the physical modeling of the short channel in the DMOS branch and the buffer layer near the anode in IGBT device structures. Good agreement between simulated and measured data has been obtained.

U2 - 10.1007/978-3-7091-6657-4_84

DO - 10.1007/978-3-7091-6657-4_84

M3 - Conference article in proceedings

SN - 978-3-7091-7372-5

VL - 5

T3 - Simulation of Semiconductor Devices and Processes

SP - 341

EP - 344

BT - Simulation of Semiconductor Devices and Processes

PB - Springer

T2 - Fifth International Conference on Simulation of Semiconductor Devices and Processes (SISDEP 93)

Y2 - 7 September 1993 through 9 September 1993

ER -

Physical IGBT model for circuit simulations

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Publication series

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