Physical IGBT model for circuit simulations

Mikael Andersson, Marko Grönlund, Pekka Kuivalainen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

An improved analytical model for IGB power transistors has been developed for circuit simulators. Special attention is paid to the physical modeling of the short channel in the DMOS branch and the buffer layer near the anode in IGBT device structures. Good agreement between simulated and measured data has been obtained.
Original languageEnglish
Title of host publicationSimulation of Semiconductor Devices and Processes
PublisherSpringer
Pages341-344
Volume5
ISBN (Electronic)978-3-7091-6657-4
ISBN (Print)978-3-7091-7372-5
DOIs
Publication statusPublished - 1993
MoE publication typeA4 Article in a conference publication
EventFifth International Conference on Simulation of Semiconductor Devices and Processes (SISDEP 93) - Vienna, Austria
Duration: 7 Sep 19939 Sep 1993

Publication series

SeriesSimulation of Semiconductor Devices and Processes

Conference

ConferenceFifth International Conference on Simulation of Semiconductor Devices and Processes (SISDEP 93)
CountryAustria
CityVienna
Period7/09/939/09/93

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  • Cite this

    Andersson, M., Grönlund, M., & Kuivalainen, P. (1993). Physical IGBT model for circuit simulations. In Simulation of Semiconductor Devices and Processes (Vol. 5, pp. 341-344). Springer. Simulation of Semiconductor Devices and Processes https://doi.org/10.1007/978-3-7091-6657-4_84