Physical modeling of submicron MOSFET's by using a modified SPICE MOS3 model: Application to 0.5 µm LDD MOSFET's

Pekka Kuivalainen; Hannu Ronkainen; Mikael Andersson; Simo Eränen

Physical modeling of submicron MOSFET's by using a modified SPICE MOS3 model: Application to 0.5 µm LDD MOSFET's

Pekka Kuivalainen, Hannu Ronkainen, Mikael Andersson, Simo Eränen

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Original language	English
Title of host publication	Simulation of semiconductor devices and processes
Subtitle of host publication	Proceedings of the 4th International Conference on Simulation of Semiconductor Devices and Processes
Editors	Wolfgang Fichtner
Place of Publication	Konstanz
Publisher	Hartung-Gorre
Pages	545-551
Publication status	Published - 1991
MoE publication type	A4 Article in a conference publication
Event	4th International Conference on Simulation of Semiconductor Devices and Processes - Federal Institute of Technology, Zürich, Switzerland Duration: 12 Sept 1991 → 14 Sept 1991

Conference

Conference	4th International Conference on Simulation of Semiconductor Devices and Processes
Country/Territory	Switzerland
City	Zürich
Period	12/09/91 → 14/09/91

Cite this

Kuivalainen, P., Ronkainen, H., Andersson, M., & Eränen, S. (1991). Physical modeling of submicron MOSFET's by using a modified SPICE MOS3 model: Application to 0.5 µm LDD MOSFET's. In W. Fichtner (Ed.), Simulation of semiconductor devices and processes: Proceedings of the 4th International Conference on Simulation of Semiconductor Devices and Processes (pp. 545-551). Hartung-Gorre.

Kuivalainen, Pekka ; Ronkainen, Hannu ; Andersson, Mikael et al. / Physical modeling of submicron MOSFET's by using a modified SPICE MOS3 model : Application to 0.5 µm LDD MOSFET's. Simulation of semiconductor devices and processes: Proceedings of the 4th International Conference on Simulation of Semiconductor Devices and Processes. editor / Wolfgang Fichtner. Konstanz : Hartung-Gorre, 1991. pp. 545-551

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title = "Physical modeling of submicron MOSFET's by using a modified SPICE MOS3 model: Application to 0.5 µm LDD MOSFET's",

author = "Pekka Kuivalainen and Hannu Ronkainen and Mikael Andersson and Simo Er{\"a}nen",

note = "Project code: puo1008; 4th International Conference on Simulation of Semiconductor Devices and Processes ; Conference date: 12-09-1991 Through 14-09-1991",

year = "1991",

language = "English",

pages = "545--551",

editor = "Wolfgang Fichtner",

booktitle = "Simulation of semiconductor devices and processes",

publisher = "Hartung-Gorre",

address = "Germany",

}

Kuivalainen, P, Ronkainen, H, Andersson, M & Eränen, S 1991, Physical modeling of submicron MOSFET's by using a modified SPICE MOS3 model: Application to 0.5 µm LDD MOSFET's. in W Fichtner (ed.), Simulation of semiconductor devices and processes: Proceedings of the 4th International Conference on Simulation of Semiconductor Devices and Processes. Hartung-Gorre, Konstanz, pp. 545-551, 4th International Conference on Simulation of Semiconductor Devices and Processes, Zürich, Switzerland, 12/09/91.

Physical modeling of submicron MOSFET's by using a modified SPICE MOS3 model: Application to 0.5 µm LDD MOSFET's. / Kuivalainen, Pekka; Ronkainen, Hannu; Andersson, Mikael et al.
Simulation of semiconductor devices and processes: Proceedings of the 4th International Conference on Simulation of Semiconductor Devices and Processes. ed. / Wolfgang Fichtner. Konstanz: Hartung-Gorre, 1991. p. 545-551.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Physical modeling of submicron MOSFET's by using a modified SPICE MOS3 model

T2 - 4th International Conference on Simulation of Semiconductor Devices and Processes

AU - Kuivalainen, Pekka

AU - Ronkainen, Hannu

AU - Andersson, Mikael

AU - Eränen, Simo

N1 - Project code: puo1008

PY - 1991

Y1 - 1991

M3 - Conference article in proceedings

SP - 545

EP - 551

BT - Simulation of semiconductor devices and processes

A2 - Fichtner, Wolfgang

PB - Hartung-Gorre

CY - Konstanz

Y2 - 12 September 1991 through 14 September 1991

ER -

Kuivalainen P, Ronkainen H, Andersson M, Eränen S. Physical modeling of submicron MOSFET's by using a modified SPICE MOS3 model: Application to 0.5 µm LDD MOSFET's. In Fichtner W, editor, Simulation of semiconductor devices and processes: Proceedings of the 4th International Conference on Simulation of Semiconductor Devices and Processes. Konstanz: Hartung-Gorre. 1991. p. 545-551