Physical modeling of submicron MOSFET's by using a modified SPICE MOS3 model: Application to 0.5 µm LDD MOSFET's

Pekka Kuivalainen, Hannu Ronkainen, Mikael Andersson, Simo Eränen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Original languageEnglish
    Title of host publicationSimulation of semiconductor devices and processes
    Subtitle of host publicationProceedings of the 4th International Conference on Simulation of Semiconductor Devices and Processes
    EditorsWolfgang Fichtner
    Place of PublicationKonstanz
    PublisherHartung-Gorre
    Pages545-551
    Publication statusPublished - 1991
    MoE publication typeA4 Article in a conference publication
    Event4th International Conference on Simulation of Semiconductor Devices and Processes - Federal Institute of Technology, Zürich, Switzerland
    Duration: 12 Sep 199114 Sep 1991

    Conference

    Conference4th International Conference on Simulation of Semiconductor Devices and Processes
    CountrySwitzerland
    CityZürich
    Period12/09/9114/09/91

    Cite this

    Kuivalainen, P., Ronkainen, H., Andersson, M., & Eränen, S. (1991). Physical modeling of submicron MOSFET's by using a modified SPICE MOS3 model: Application to 0.5 µm LDD MOSFET's. In W. Fichtner (Ed.), Simulation of semiconductor devices and processes: Proceedings of the 4th International Conference on Simulation of Semiconductor Devices and Processes (pp. 545-551). Hartung-Gorre.