@inproceedings{9335ecf097f44f33884ae93592f2a5ca,
title = "Physical modelling of vertical DMOS power transistors for circuit simulation",
abstract = "A physical model for vertical DMOS power transistors is presented. The model takes into account various short channel effects in the DMOS channel region and the velocity saturation and the exact device geometry in the drift region. The model, aimed at computer aided design of power integrated circuits, has been implemented in the APLAC circuit simulator. A good agreement between the measured and simulated results for vertical DMOSTs is demonstrated.",
author = "Mikael Andersson and Pekka Kuivalainen",
note = "Project code: ELE41061; 16th Nordic Semiconductor Meeting ; Conference date: 12-06-1994 Through 15-06-1994",
year = "1994",
doi = "10.1088/0031-8949/1994/T54/038",
language = "English",
isbn = "978-91-8730-821-5",
series = "Physica Scripta T",
publisher = "Royal Swedish Academy of Sciences",
pages = "157--158",
editor = "G{\'i}slason, {Hafli{\dh}i P{\'e}tur} and Vi{\dh}ar Gu{\dh}mundsson",
booktitle = "Proceedings of the 16th Nordic Semiconductor Meeting",
address = "Sweden",
}