Physical modelling of vertical DMOS power transistors for circuit simulation

Engineering

• Simulated Result 100%
• Good Agreement 100%
• Measured Result 100%
• Circuit Simulation 100%
• Channel Region 100%
• Physical Modeling 100%
• Physical Model 100%
• Computer Aided Design 100%

Keyphrases

• Circuit Simulation 100%
• Physical Modeling 100%
• Power Transistors 100%
• Physical Model 50%
• Short Channel Effects 50%
• Circuit Simulator 50%
• Computer-aided Design 50%
• APLAC 50%
• Drift Region 50%
• Power Integrated Circuits 50%
• Velocity Saturation 50%
• Device Geometry 50%

INIS

• simulation 100%
• power 100%
• transistors 100%
• modeling 100%
• geometry 33%
• devices 33%
• saturation 33%
• velocity 33%
• simulators 33%
• integrated circuits 33%
• computer-aided design 33%