Piezotransduced single-crystal silicon BAW resonators

A. Jaakkola, P. Rosenberg, A. Nurmela, T. Pensala, T. Riekkinen, J. Dekker, T. Mattila, A. Alastalo

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

16 Citations (Scopus)

Abstract

We report on the design, fabrication and measurement of 13-MHz piezoelectrically actuated single-crystal silicon beam resonators operating in the first length-extensional mode. The transduction mechanism is based on an aluminum nitride layer grown on top of the resonator beam. The resonators are measured to have a quality factor of Q ~ 20000 at p < 1 mbar and typical motional resistance of Rm ~ 3 kOmega. The electromechanical transduction factor is eta ~20 muN/V, representing a coupling of the same order as produced by 20 V over a 100-nm gap for capacitively coupled resonators. The quality factor is observed to be dependent on the crystal direction of the resonator beam. A qualitative explanation for this effect is given.
Original languageEnglish
Title of host publicationProceedings - IEEE Ultrasonics Symposium
Pages1653-1656
Number of pages4
ISBN (Electronic)978-1-4244-1384-3
DOIs
Publication statusPublished - 2007
MoE publication typeA4 Article in a conference publication
EventIEEE Ultrasonics Symposium - New York, United States
Duration: 28 Oct 200731 Oct 2007

Conference

ConferenceIEEE Ultrasonics Symposium
CountryUnited States
CityNew York
Period28/10/0731/10/07

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  • Cite this

    Jaakkola, A., Rosenberg, P., Nurmela, A., Pensala, T., Riekkinen, T., Dekker, J., Mattila, T., & Alastalo, A. (2007). Piezotransduced single-crystal silicon BAW resonators. In Proceedings - IEEE Ultrasonics Symposium (pp. 1653-1656) https://doi.org/10.1109/ULTSYM.2007.416