Piezotransduced single-crystal silicon BAW resonators

A. Jaakkola; P. Rosenberg; A. Nurmela; T. Pensala; T. Riekkinen; J. Dekker; T. Mattila; A. Alastalo

doi:10.1109/ULTSYM.2007.416

Piezotransduced single-crystal silicon BAW resonators

A. Jaakkola, P. Rosenberg, A. Nurmela, T. Pensala, T. Riekkinen, J. Dekker, T. Mattila, A. Alastalo

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

17 Citations (Scopus)

Abstract

We report on the design, fabrication and measurement of 13-MHz piezoelectrically actuated single-crystal silicon beam resonators operating in the first length-extensional mode. The transduction mechanism is based on an aluminum nitride layer grown on top of the resonator beam. The resonators are measured to have a quality factor of Q ~ 20000 at p < 1 mbar and typical motional resistance of Rm ~ 3 kOmega. The electromechanical transduction factor is eta ~20 muN/V, representing a coupling of the same order as produced by 20 V over a 100-nm gap for capacitively coupled resonators. The quality factor is observed to be dependent on the crystal direction of the resonator beam. A qualitative explanation for this effect is given.

Original language	English
Title of host publication	Proceedings - IEEE Ultrasonics Symposium
Pages	1653-1656
Number of pages	4
ISBN (Electronic)	978-1-4244-1384-3
DOIs	https://doi.org/10.1109/ULTSYM.2007.416
Publication status	Published - 2007
MoE publication type	A4 Article in a conference publication
Event	IEEE Ultrasonics Symposium - New York, United States Duration: 28 Oct 2007 → 31 Oct 2007

Conference

Conference	IEEE Ultrasonics Symposium
Country/Territory	United States
City	New York
Period	28/10/07 → 31/10/07

Access to Document

10.1109/ULTSYM.2007.416

https://www.scopus.com/inward/record.uri?eid=2-s2.0-48149115479&doi=10.1109%2fULTSYM.2007.416&partnerID=40&md5=fa0e47cee174ae756f8da8655e2a7440

Cite this

@inproceedings{38c1668737be47a8a2c5a5f2bb1e11a7,

title = "Piezotransduced single-crystal silicon BAW resonators",

abstract = "We report on the design, fabrication and measurement of 13-MHz piezoelectrically actuated single-crystal silicon beam resonators operating in the first length-extensional mode. The transduction mechanism is based on an aluminum nitride layer grown on top of the resonator beam. The resonators are measured to have a quality factor of Q ~ 20000 at p < 1 mbar and typical motional resistance of Rm ~ 3 kOmega. The electromechanical transduction factor is eta ~20 muN/V, representing a coupling of the same order as produced by 20 V over a 100-nm gap for capacitively coupled resonators. The quality factor is observed to be dependent on the crystal direction of the resonator beam. A qualitative explanation for this effect is given.",

author = "A. Jaakkola and P. Rosenberg and A. Nurmela and T. Pensala and T. Riekkinen and J. Dekker and T. Mattila and A. Alastalo",

year = "2007",

doi = "10.1109/ULTSYM.2007.416",

language = "English",

isbn = "978-1-4244-1383-6",

pages = "1653--1656",

booktitle = "Proceedings - IEEE Ultrasonics Symposium",

note = "IEEE Ultrasonics Symposium ; Conference date: 28-10-2007 Through 31-10-2007",

}

TY - GEN

T1 - Piezotransduced single-crystal silicon BAW resonators

AU - Jaakkola, A.

AU - Rosenberg, P.

AU - Nurmela, A.

AU - Pensala, T.

AU - Riekkinen, T.

AU - Dekker, J.

AU - Mattila, T.

AU - Alastalo, A.

PY - 2007

Y1 - 2007

N2 - We report on the design, fabrication and measurement of 13-MHz piezoelectrically actuated single-crystal silicon beam resonators operating in the first length-extensional mode. The transduction mechanism is based on an aluminum nitride layer grown on top of the resonator beam. The resonators are measured to have a quality factor of Q ~ 20000 at p < 1 mbar and typical motional resistance of Rm ~ 3 kOmega. The electromechanical transduction factor is eta ~20 muN/V, representing a coupling of the same order as produced by 20 V over a 100-nm gap for capacitively coupled resonators. The quality factor is observed to be dependent on the crystal direction of the resonator beam. A qualitative explanation for this effect is given.

AB - We report on the design, fabrication and measurement of 13-MHz piezoelectrically actuated single-crystal silicon beam resonators operating in the first length-extensional mode. The transduction mechanism is based on an aluminum nitride layer grown on top of the resonator beam. The resonators are measured to have a quality factor of Q ~ 20000 at p < 1 mbar and typical motional resistance of Rm ~ 3 kOmega. The electromechanical transduction factor is eta ~20 muN/V, representing a coupling of the same order as produced by 20 V over a 100-nm gap for capacitively coupled resonators. The quality factor is observed to be dependent on the crystal direction of the resonator beam. A qualitative explanation for this effect is given.

U2 - 10.1109/ULTSYM.2007.416

DO - 10.1109/ULTSYM.2007.416

M3 - Conference article in proceedings

SN - 978-1-4244-1383-6

SP - 1653

EP - 1656

BT - Proceedings - IEEE Ultrasonics Symposium

T2 - IEEE Ultrasonics Symposium

Y2 - 28 October 2007 through 31 October 2007

ER -

Piezotransduced single-crystal silicon BAW resonators

Abstract

Conference

Access to Document

Fingerprint

Cite this