Piezotransduced single-crystal silicon BAW resonators

A. Jaakkola, P. Rosenberg, A. Nurmela, T. Pensala, T. Riekkinen, J. Dekker, T. Mattila, A. Alastalo

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    16 Citations (Scopus)

    Abstract

    We report on the design, fabrication and measurement of 13-MHz piezoelectrically actuated single-crystal silicon beam resonators operating in the first length-extensional mode. The transduction mechanism is based on an aluminum nitride layer grown on top of the resonator beam. The resonators are measured to have a quality factor of Q ~ 20000 at p < 1 mbar and typical motional resistance of Rm ~ 3 kOmega. The electromechanical transduction factor is eta ~20 muN/V, representing a coupling of the same order as produced by 20 V over a 100-nm gap for capacitively coupled resonators. The quality factor is observed to be dependent on the crystal direction of the resonator beam. A qualitative explanation for this effect is given.
    Original languageEnglish
    Title of host publicationProceedings - IEEE Ultrasonics Symposium
    Pages1653-1656
    Number of pages4
    ISBN (Electronic)978-1-4244-1384-3
    DOIs
    Publication statusPublished - 2007
    MoE publication typeA4 Article in a conference publication
    EventIEEE Ultrasonics Symposium - New York, United States
    Duration: 28 Oct 200731 Oct 2007

    Conference

    ConferenceIEEE Ultrasonics Symposium
    CountryUnited States
    CityNew York
    Period28/10/0731/10/07

    Fingerprint Dive into the research topics of 'Piezotransduced single-crystal silicon BAW resonators'. Together they form a unique fingerprint.

    Cite this