Piezotransduced single-crystal silicon BAW resonators

A. Jaakkola, P. Rosenberg, A. Nurmela, T. Pensala, T. Riekkinen, J. Dekker, T. Mattila, A. Alastalo

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

16 Citations (Scopus)

Abstract

We report on the design, fabrication and measurement of 13-MHz piezoelectrically actuated single-crystal silicon beam resonators operating in the first length-extensional mode. The transduction mechanism is based on an aluminum nitride layer grown on top of the resonator beam. The resonators are measured to have a quality factor of Q ~ 20000 at p < 1 mbar and typical motional resistance of Rm ~ 3 kOmega. The electromechanical transduction factor is eta ~20 muN/V, representing a coupling of the same order as produced by 20 V over a 100-nm gap for capacitively coupled resonators. The quality factor is observed to be dependent on the crystal direction of the resonator beam. A qualitative explanation for this effect is given.
Original languageEnglish
Title of host publicationProceedings - IEEE Ultrasonics Symposium
Pages1653-1656
Number of pages4
ISBN (Electronic)978-1-4244-1384-3
DOIs
Publication statusPublished - 2007
MoE publication typeA4 Article in a conference publication
EventIEEE Ultrasonics Symposium - New York, United States
Duration: 28 Oct 200731 Oct 2007

Conference

ConferenceIEEE Ultrasonics Symposium
CountryUnited States
CityNew York
Period28/10/0731/10/07

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resonators
single crystals
silicon
Q factors
aluminum nitrides
fabrication
crystals

Cite this

Jaakkola, A., Rosenberg, P., Nurmela, A., Pensala, T., Riekkinen, T., Dekker, J., ... Alastalo, A. (2007). Piezotransduced single-crystal silicon BAW resonators. In Proceedings - IEEE Ultrasonics Symposium (pp. 1653-1656) https://doi.org/10.1109/ULTSYM.2007.416
Jaakkola, A. ; Rosenberg, P. ; Nurmela, A. ; Pensala, T. ; Riekkinen, T. ; Dekker, J. ; Mattila, T. ; Alastalo, A. / Piezotransduced single-crystal silicon BAW resonators. Proceedings - IEEE Ultrasonics Symposium. 2007. pp. 1653-1656
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title = "Piezotransduced single-crystal silicon BAW resonators",
abstract = "We report on the design, fabrication and measurement of 13-MHz piezoelectrically actuated single-crystal silicon beam resonators operating in the first length-extensional mode. The transduction mechanism is based on an aluminum nitride layer grown on top of the resonator beam. The resonators are measured to have a quality factor of Q ~ 20000 at p < 1 mbar and typical motional resistance of Rm ~ 3 kOmega. The electromechanical transduction factor is eta ~20 muN/V, representing a coupling of the same order as produced by 20 V over a 100-nm gap for capacitively coupled resonators. The quality factor is observed to be dependent on the crystal direction of the resonator beam. A qualitative explanation for this effect is given.",
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Jaakkola, A, Rosenberg, P, Nurmela, A, Pensala, T, Riekkinen, T, Dekker, J, Mattila, T & Alastalo, A 2007, Piezotransduced single-crystal silicon BAW resonators. in Proceedings - IEEE Ultrasonics Symposium. pp. 1653-1656, IEEE Ultrasonics Symposium, New York, United States, 28/10/07. https://doi.org/10.1109/ULTSYM.2007.416

Piezotransduced single-crystal silicon BAW resonators. / Jaakkola, A.; Rosenberg, P.; Nurmela, A.; Pensala, T.; Riekkinen, T.; Dekker, J.; Mattila, T.; Alastalo, A.

Proceedings - IEEE Ultrasonics Symposium. 2007. p. 1653-1656.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Piezotransduced single-crystal silicon BAW resonators

AU - Jaakkola, A.

AU - Rosenberg, P.

AU - Nurmela, A.

AU - Pensala, T.

AU - Riekkinen, T.

AU - Dekker, J.

AU - Mattila, T.

AU - Alastalo, A.

PY - 2007

Y1 - 2007

N2 - We report on the design, fabrication and measurement of 13-MHz piezoelectrically actuated single-crystal silicon beam resonators operating in the first length-extensional mode. The transduction mechanism is based on an aluminum nitride layer grown on top of the resonator beam. The resonators are measured to have a quality factor of Q ~ 20000 at p < 1 mbar and typical motional resistance of Rm ~ 3 kOmega. The electromechanical transduction factor is eta ~20 muN/V, representing a coupling of the same order as produced by 20 V over a 100-nm gap for capacitively coupled resonators. The quality factor is observed to be dependent on the crystal direction of the resonator beam. A qualitative explanation for this effect is given.

AB - We report on the design, fabrication and measurement of 13-MHz piezoelectrically actuated single-crystal silicon beam resonators operating in the first length-extensional mode. The transduction mechanism is based on an aluminum nitride layer grown on top of the resonator beam. The resonators are measured to have a quality factor of Q ~ 20000 at p < 1 mbar and typical motional resistance of Rm ~ 3 kOmega. The electromechanical transduction factor is eta ~20 muN/V, representing a coupling of the same order as produced by 20 V over a 100-nm gap for capacitively coupled resonators. The quality factor is observed to be dependent on the crystal direction of the resonator beam. A qualitative explanation for this effect is given.

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M3 - Conference article in proceedings

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BT - Proceedings - IEEE Ultrasonics Symposium

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Jaakkola A, Rosenberg P, Nurmela A, Pensala T, Riekkinen T, Dekker J et al. Piezotransduced single-crystal silicon BAW resonators. In Proceedings - IEEE Ultrasonics Symposium. 2007. p. 1653-1656 https://doi.org/10.1109/ULTSYM.2007.416