Pinning of charge density waves by irradiation induced defects in orthorhombic TaS3

G. Mihály; L. Mihály; Hannu Mutka

doi:10.1016/0038-1098(84)90411-3

Pinning of charge density waves by irradiation induced defects in orthorhombic TaS₃

G. Mihály, L. Mihály, Hannu Mutka

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

12 Citations (Scopus)

Abstract

Effects of electron irradiation induced damage on dc conductivity, threshold field and complex dielectric constant at 9 GHz are investigated in a wide temperature range. Whereas the single particle gap in the low temperature phase is not influenced by irradiation, transport properties associated with collective excitation of charge density waves (CDW) are sensitive to the presence of new pinning centres. The results are discussed in the framework of the semiclassical model of Grüner, Zawadowski and Chaikin. The pinning frequency determined from the threshold field agrees well with that of calculated from the complex dielectric constant.

Original language	English
Pages (from-to)	1009-1012
Journal	Solid State Communications
Volume	49
Issue number	11
DOIs	https://doi.org/10.1016/0038-1098(84)90411-3
Publication status	Published - 1984
MoE publication type	A1 Journal article-refereed

Access to Document

10.1016/0038-1098(84)90411-3

Cite this

@article{026d2a18293f409ca2c0d69cc0cc6c76,

title = "Pinning of charge density waves by irradiation induced defects in orthorhombic TaS3",

abstract = "Effects of electron irradiation induced damage on dc conductivity, threshold field and complex dielectric constant at 9 GHz are investigated in a wide temperature range. Whereas the single particle gap in the low temperature phase is not influenced by irradiation, transport properties associated with collective excitation of charge density waves (CDW) are sensitive to the presence of new pinning centres. The results are discussed in the framework of the semiclassical model of Gr{\"u}ner, Zawadowski and Chaikin. The pinning frequency determined from the threshold field agrees well with that of calculated from the complex dielectric constant.",

author = "G. Mih{\'a}ly and L. Mih{\'a}ly and Hannu Mutka",

year = "1984",

doi = "10.1016/0038-1098(84)90411-3",

language = "English",

volume = "49",

pages = "1009--1012",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier",

number = "11",

}

TY - JOUR

T1 - Pinning of charge density waves by irradiation induced defects in orthorhombic TaS3

AU - Mihály, G.

AU - Mihály, L.

AU - Mutka, Hannu

PY - 1984

Y1 - 1984

N2 - Effects of electron irradiation induced damage on dc conductivity, threshold field and complex dielectric constant at 9 GHz are investigated in a wide temperature range. Whereas the single particle gap in the low temperature phase is not influenced by irradiation, transport properties associated with collective excitation of charge density waves (CDW) are sensitive to the presence of new pinning centres. The results are discussed in the framework of the semiclassical model of Grüner, Zawadowski and Chaikin. The pinning frequency determined from the threshold field agrees well with that of calculated from the complex dielectric constant.

AB - Effects of electron irradiation induced damage on dc conductivity, threshold field and complex dielectric constant at 9 GHz are investigated in a wide temperature range. Whereas the single particle gap in the low temperature phase is not influenced by irradiation, transport properties associated with collective excitation of charge density waves (CDW) are sensitive to the presence of new pinning centres. The results are discussed in the framework of the semiclassical model of Grüner, Zawadowski and Chaikin. The pinning frequency determined from the threshold field agrees well with that of calculated from the complex dielectric constant.

U2 - 10.1016/0038-1098(84)90411-3

DO - 10.1016/0038-1098(84)90411-3

M3 - Article

SN - 0038-1098

VL - 49

SP - 1009

EP - 1012

JO - Solid State Communications

JF - Solid State Communications

IS - 11

ER -

Pinning of charge density waves by irradiation induced defects in orthorhombic TaS3

Abstract

Access to Document

Fingerprint

Cite this

Pinning of charge density waves by irradiation induced defects in orthorhombic TaS₃