Pixelized M-p-n CdTe detector coupled to Medipix2 readout chip

Juha Kalliopuska, S. Nenonen, Raimo Penttilä, Harri Pohjonen, L. Tlustos, Akiko Gädda, Jari Likonen, H. Andersson, Petri Laakso, Ilkka Vanttaja

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)

    Abstract

    We have realized a simple method for patterning an M-π-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration.

    The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. The anode and cathode-sides of a 6 × 6 mm2 diodes were patterned with a diamond blade and flip-chip bonded to the Medipix2 readout chips. First imaging results with an X-ray source show reduced polarization effect and edgeless detector behavior for the anode-side patterned detector.
    Original languageEnglish
    Article numberC01100
    JournalJournal of Instrumentation
    Volume6
    Issue number1
    DOIs
    Publication statusPublished - 2011
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    CdTe
    Diode
    readout
    Diodes
    Chip
    diodes
    chips
    Detector
    Anodes
    Detectors
    anodes
    detectors
    Patterning
    blades
    Blade
    Strombus or kite or diamond
    Flip chip
    Diamonds
    diamonds
    Indium

    Keywords

    • hybrid detectors
    • pixelated detectors and associated VLSI electronics
    • solid state detectors
    • X-ray detectors

    Cite this

    Kalliopuska, J., Nenonen, S., Penttilä, R., Pohjonen, H., Tlustos, L., Gädda, A., ... Vanttaja, I. (2011). Pixelized M-p-n CdTe detector coupled to Medipix2 readout chip. Journal of Instrumentation, 6(1), [C01100]. https://doi.org/10.1088/1748-0221/6/01/C01100
    Kalliopuska, Juha ; Nenonen, S. ; Penttilä, Raimo ; Pohjonen, Harri ; Tlustos, L. ; Gädda, Akiko ; Likonen, Jari ; Andersson, H. ; Laakso, Petri ; Vanttaja, Ilkka. / Pixelized M-p-n CdTe detector coupled to Medipix2 readout chip. In: Journal of Instrumentation. 2011 ; Vol. 6, No. 1.
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    title = "Pixelized M-p-n CdTe detector coupled to Medipix2 readout chip",
    abstract = "We have realized a simple method for patterning an M-π-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration.The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. The anode and cathode-sides of a 6 × 6 mm2 diodes were patterned with a diamond blade and flip-chip bonded to the Medipix2 readout chips. First imaging results with an X-ray source show reduced polarization effect and edgeless detector behavior for the anode-side patterned detector.",
    keywords = "hybrid detectors, pixelated detectors and associated VLSI electronics, solid state detectors, X-ray detectors",
    author = "Juha Kalliopuska and S. Nenonen and Raimo Penttil{\"a} and Harri Pohjonen and L. Tlustos and Akiko G{\"a}dda and Jari Likonen and H. Andersson and Petri Laakso and Ilkka Vanttaja",
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    doi = "10.1088/1748-0221/6/01/C01100",
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    Kalliopuska, J, Nenonen, S, Penttilä, R, Pohjonen, H, Tlustos, L, Gädda, A, Likonen, J, Andersson, H, Laakso, P & Vanttaja, I 2011, 'Pixelized M-p-n CdTe detector coupled to Medipix2 readout chip', Journal of Instrumentation, vol. 6, no. 1, C01100. https://doi.org/10.1088/1748-0221/6/01/C01100

    Pixelized M-p-n CdTe detector coupled to Medipix2 readout chip. / Kalliopuska, Juha; Nenonen, S.; Penttilä, Raimo; Pohjonen, Harri; Tlustos, L.; Gädda, Akiko; Likonen, Jari; Andersson, H.; Laakso, Petri; Vanttaja, Ilkka.

    In: Journal of Instrumentation, Vol. 6, No. 1, C01100, 2011.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Pixelized M-p-n CdTe detector coupled to Medipix2 readout chip

    AU - Kalliopuska, Juha

    AU - Nenonen, S.

    AU - Penttilä, Raimo

    AU - Pohjonen, Harri

    AU - Tlustos, L.

    AU - Gädda, Akiko

    AU - Likonen, Jari

    AU - Andersson, H.

    AU - Laakso, Petri

    AU - Vanttaja, Ilkka

    PY - 2011

    Y1 - 2011

    N2 - We have realized a simple method for patterning an M-π-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration.The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. The anode and cathode-sides of a 6 × 6 mm2 diodes were patterned with a diamond blade and flip-chip bonded to the Medipix2 readout chips. First imaging results with an X-ray source show reduced polarization effect and edgeless detector behavior for the anode-side patterned detector.

    AB - We have realized a simple method for patterning an M-π-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration.The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. The anode and cathode-sides of a 6 × 6 mm2 diodes were patterned with a diamond blade and flip-chip bonded to the Medipix2 readout chips. First imaging results with an X-ray source show reduced polarization effect and edgeless detector behavior for the anode-side patterned detector.

    KW - hybrid detectors

    KW - pixelated detectors and associated VLSI electronics

    KW - solid state detectors

    KW - X-ray detectors

    U2 - 10.1088/1748-0221/6/01/C01100

    DO - 10.1088/1748-0221/6/01/C01100

    M3 - Article

    VL - 6

    JO - Journal of Instrumentation

    JF - Journal of Instrumentation

    SN - 1748-0221

    IS - 1

    M1 - C01100

    ER -