Pixelized M-p-n CdTe detector coupled to Medipix2 readout chip

Juha Kalliopuska, S. Nenonen, Raimo Penttilä, Harri Pohjonen, L. Tlustos, Akiko Gädda, Jari Likonen, H. Andersson, Petri Laakso, Ilkka Vanttaja

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

We have realized a simple method for patterning an M-π-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration.

The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. The anode and cathode-sides of a 6 × 6 mm2 diodes were patterned with a diamond blade and flip-chip bonded to the Medipix2 readout chips. First imaging results with an X-ray source show reduced polarization effect and edgeless detector behavior for the anode-side patterned detector.
Original languageEnglish
Article numberC01100
JournalJournal of Instrumentation
Volume6
Issue number1
DOIs
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

Fingerprint

CdTe
Diode
readout
Diodes
Chip
diodes
chips
Detector
Anodes
Detectors
anodes
detectors
Patterning
blades
Blade
Strombus or kite or diamond
Flip chip
Diamonds
diamonds
Indium

Keywords

  • hybrid detectors
  • pixelated detectors and associated VLSI electronics
  • solid state detectors
  • X-ray detectors

Cite this

Kalliopuska, J., Nenonen, S., Penttilä, R., Pohjonen, H., Tlustos, L., Gädda, A., ... Vanttaja, I. (2011). Pixelized M-p-n CdTe detector coupled to Medipix2 readout chip. Journal of Instrumentation, 6(1), [C01100]. https://doi.org/10.1088/1748-0221/6/01/C01100
Kalliopuska, Juha ; Nenonen, S. ; Penttilä, Raimo ; Pohjonen, Harri ; Tlustos, L. ; Gädda, Akiko ; Likonen, Jari ; Andersson, H. ; Laakso, Petri ; Vanttaja, Ilkka. / Pixelized M-p-n CdTe detector coupled to Medipix2 readout chip. In: Journal of Instrumentation. 2011 ; Vol. 6, No. 1.
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abstract = "We have realized a simple method for patterning an M-π-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration.The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. The anode and cathode-sides of a 6 × 6 mm2 diodes were patterned with a diamond blade and flip-chip bonded to the Medipix2 readout chips. First imaging results with an X-ray source show reduced polarization effect and edgeless detector behavior for the anode-side patterned detector.",
keywords = "hybrid detectors, pixelated detectors and associated VLSI electronics, solid state detectors, X-ray detectors",
author = "Juha Kalliopuska and S. Nenonen and Raimo Penttil{\"a} and Harri Pohjonen and L. Tlustos and Akiko G{\"a}dda and Jari Likonen and H. Andersson and Petri Laakso and Ilkka Vanttaja",
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Kalliopuska, J, Nenonen, S, Penttilä, R, Pohjonen, H, Tlustos, L, Gädda, A, Likonen, J, Andersson, H, Laakso, P & Vanttaja, I 2011, 'Pixelized M-p-n CdTe detector coupled to Medipix2 readout chip', Journal of Instrumentation, vol. 6, no. 1, C01100. https://doi.org/10.1088/1748-0221/6/01/C01100

Pixelized M-p-n CdTe detector coupled to Medipix2 readout chip. / Kalliopuska, Juha; Nenonen, S.; Penttilä, Raimo; Pohjonen, Harri; Tlustos, L.; Gädda, Akiko; Likonen, Jari; Andersson, H.; Laakso, Petri; Vanttaja, Ilkka.

In: Journal of Instrumentation, Vol. 6, No. 1, C01100, 2011.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Pixelized M-p-n CdTe detector coupled to Medipix2 readout chip

AU - Kalliopuska, Juha

AU - Nenonen, S.

AU - Penttilä, Raimo

AU - Pohjonen, Harri

AU - Tlustos, L.

AU - Gädda, Akiko

AU - Likonen, Jari

AU - Andersson, H.

AU - Laakso, Petri

AU - Vanttaja, Ilkka

PY - 2011

Y1 - 2011

N2 - We have realized a simple method for patterning an M-π-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration.The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. The anode and cathode-sides of a 6 × 6 mm2 diodes were patterned with a diamond blade and flip-chip bonded to the Medipix2 readout chips. First imaging results with an X-ray source show reduced polarization effect and edgeless detector behavior for the anode-side patterned detector.

AB - We have realized a simple method for patterning an M-π-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration.The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. The anode and cathode-sides of a 6 × 6 mm2 diodes were patterned with a diamond blade and flip-chip bonded to the Medipix2 readout chips. First imaging results with an X-ray source show reduced polarization effect and edgeless detector behavior for the anode-side patterned detector.

KW - hybrid detectors

KW - pixelated detectors and associated VLSI electronics

KW - solid state detectors

KW - X-ray detectors

U2 - 10.1088/1748-0221/6/01/C01100

DO - 10.1088/1748-0221/6/01/C01100

M3 - Article

VL - 6

JO - Journal of Instrumentation

JF - Journal of Instrumentation

SN - 1748-0221

IS - 1

M1 - C01100

ER -