Pixelized M-p-n CdTe detector coupled to Medipix2 readout chip

Juha Kalliopuska, S. Nenonen, Raimo Penttilä, Harri Pohjonen, L. Tlustos, Akiko Gädda, Jari Likonen, H. Andersson, Petri Laakso, Ilkka Vanttaja

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)


    We have realized a simple method for patterning an M-π-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration.

    The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. The anode and cathode-sides of a 6 × 6 mm2 diodes were patterned with a diamond blade and flip-chip bonded to the Medipix2 readout chips. First imaging results with an X-ray source show reduced polarization effect and edgeless detector behavior for the anode-side patterned detector.
    Original languageEnglish
    Article numberC01100
    JournalJournal of Instrumentation
    Issue number1
    Publication statusPublished - 2011
    MoE publication typeA1 Journal article-refereed


    • hybrid detectors
    • pixelated detectors and associated VLSI electronics
    • solid state detectors
    • X-ray detectors


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