Planar inductors on silicon for integrated RF circuits

Esa Tarvainen; Hannu Ronkainen; Hannu Kattelus; Tarja Riihisaari; Pekka Kuivalainen

doi:10.1088/0031-8949/1997/T69/062

Planar inductors on silicon for integrated RF circuits

Esa Tarvainen, Hannu Ronkainen, Hannu Kattelus, Tarja Riihisaari, Pekka Kuivalainen

Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

We have studied the fabrication and modelling of integrated planar inductors on silicon made by using a standard 0.8 μm BiCMOS process. In order to aid the design of circuits including integrated inductors we have developed and tested a semiempirical equivalent circuit model for the planar inductors. The model, which has been implemented in the circuit simulator APLAC, shows good agreement with the measured inductor values, quality factors and S-parameters. Although the measured Q-values are below 10 in the GHz frequency range, the integrated inductors can be utilized in many RF IC applications. As a first demonstration for this we have successfully applied an integrated inductor to a low voltage monolithic voltage-controlled oscillator circuit at 1.8 GHz.

Original language	English
Pages (from-to)	295 - 297
Journal	Physica Scripta
Volume	T69
DOIs	https://doi.org/10.1088/0031-8949/1997/T69/062
Publication status	Published - 1997
MoE publication type	A1 Journal article-refereed
Event	17th Nordic Semiconductor Meeting - Trondheim, Norway Duration: 17 Jun 1996 → 20 Jun 1996

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@article{14be9c803e494211a728d029d94e19ac,

title = "Planar inductors on silicon for integrated RF circuits",

abstract = "We have studied the fabrication and modelling of integrated planar inductors on silicon made by using a standard 0.8 μm BiCMOS process. In order to aid the design of circuits including integrated inductors we have developed and tested a semiempirical equivalent circuit model for the planar inductors. The model, which has been implemented in the circuit simulator APLAC, shows good agreement with the measured inductor values, quality factors and S-parameters. Although the measured Q-values are below 10 in the GHz frequency range, the integrated inductors can be utilized in many RF IC applications. As a first demonstration for this we have successfully applied an integrated inductor to a low voltage monolithic voltage-controlled oscillator circuit at 1.8 GHz. ",

author = "Esa Tarvainen and Hannu Ronkainen and Hannu Kattelus and Tarja Riihisaari and Pekka Kuivalainen",

year = "1997",

doi = "10.1088/0031-8949/1997/T69/062",

language = "English",

volume = "T69",

pages = "295 -- 297",

journal = "Physica Scripta",

issn = "0281-1847",

publisher = "Institute of Physics IOP",

note = "17th Nordic Semiconductor Meeting ; Conference date: 17-06-1996 Through 20-06-1996",

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TY - JOUR

T1 - Planar inductors on silicon for integrated RF circuits

AU - Tarvainen, Esa

AU - Ronkainen, Hannu

AU - Kattelus, Hannu

AU - Riihisaari, Tarja

AU - Kuivalainen, Pekka

PY - 1997

Y1 - 1997

N2 - We have studied the fabrication and modelling of integrated planar inductors on silicon made by using a standard 0.8 μm BiCMOS process. In order to aid the design of circuits including integrated inductors we have developed and tested a semiempirical equivalent circuit model for the planar inductors. The model, which has been implemented in the circuit simulator APLAC, shows good agreement with the measured inductor values, quality factors and S-parameters. Although the measured Q-values are below 10 in the GHz frequency range, the integrated inductors can be utilized in many RF IC applications. As a first demonstration for this we have successfully applied an integrated inductor to a low voltage monolithic voltage-controlled oscillator circuit at 1.8 GHz.

AB - We have studied the fabrication and modelling of integrated planar inductors on silicon made by using a standard 0.8 μm BiCMOS process. In order to aid the design of circuits including integrated inductors we have developed and tested a semiempirical equivalent circuit model for the planar inductors. The model, which has been implemented in the circuit simulator APLAC, shows good agreement with the measured inductor values, quality factors and S-parameters. Although the measured Q-values are below 10 in the GHz frequency range, the integrated inductors can be utilized in many RF IC applications. As a first demonstration for this we have successfully applied an integrated inductor to a low voltage monolithic voltage-controlled oscillator circuit at 1.8 GHz.

U2 - 10.1088/0031-8949/1997/T69/062

DO - 10.1088/0031-8949/1997/T69/062

M3 - Article

SN - 0281-1847

VL - T69

SP - 295

EP - 297

JO - Physica Scripta

JF - Physica Scripta

T2 - 17th Nordic Semiconductor Meeting

Y2 - 17 June 1996 through 20 June 1996

ER -

Planar inductors on silicon for integrated RF circuits

Abstract

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