Planar inductors on silicon for integrated RF circuits

Esa Tarvainen, Hannu Ronkainen, Hannu Kattelus, Tarja Riihisaari, Pekka Kuivalainen

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

We have studied the fabrication and modelling of integrated planar inductors on silicon made by using a standard 0.8 μm BiCMOS process. In order to aid the design of circuits including integrated inductors we have developed and tested a semiempirical equivalent circuit model for the planar inductors. The model, which has been implemented in the circuit simulator APLAC, shows good agreement with the measured inductor values, quality factors and S-parameters. Although the measured Q-values are below 10 in the GHz frequency range, the integrated inductors can be utilized in many RF IC applications. As a first demonstration for this we have successfully applied an integrated inductor to a low voltage monolithic voltage-controlled oscillator circuit at 1.8 GHz.

Original languageEnglish
Pages (from-to)295 - 297
Number of pages3
JournalPhysica Scripta
VolumeT69
DOIs
Publication statusPublished - 1997
MoE publication typeA1 Journal article-refereed
Event17th Nordic Semiconductor Meeting - Trondheim, Norway
Duration: 17 Jun 199620 Jun 1996

Fingerprint

inductors
Silicon
Equivalent Circuit
Quality Factor
Low Voltage
silicon
Integrated Circuits
Fabrication
Simulator
Voltage
Modeling
Model
Range of data
voltage controlled oscillators
equivalent circuits
low voltage
simulators
integrated circuits
Q factors
frequency ranges

Cite this

Tarvainen, E., Ronkainen, H., Kattelus, H., Riihisaari, T., & Kuivalainen, P. (1997). Planar inductors on silicon for integrated RF circuits. Physica Scripta, T69, 295 - 297. https://doi.org/10.1088/0031-8949/1997/T69/062
Tarvainen, Esa ; Ronkainen, Hannu ; Kattelus, Hannu ; Riihisaari, Tarja ; Kuivalainen, Pekka. / Planar inductors on silicon for integrated RF circuits. In: Physica Scripta. 1997 ; Vol. T69. pp. 295 - 297.
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abstract = "We have studied the fabrication and modelling of integrated planar inductors on silicon made by using a standard 0.8 μm BiCMOS process. In order to aid the design of circuits including integrated inductors we have developed and tested a semiempirical equivalent circuit model for the planar inductors. The model, which has been implemented in the circuit simulator APLAC, shows good agreement with the measured inductor values, quality factors and S-parameters. Although the measured Q-values are below 10 in the GHz frequency range, the integrated inductors can be utilized in many RF IC applications. As a first demonstration for this we have successfully applied an integrated inductor to a low voltage monolithic voltage-controlled oscillator circuit at 1.8 GHz.",
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Tarvainen, E, Ronkainen, H, Kattelus, H, Riihisaari, T & Kuivalainen, P 1997, 'Planar inductors on silicon for integrated RF circuits', Physica Scripta, vol. T69, pp. 295 - 297. https://doi.org/10.1088/0031-8949/1997/T69/062

Planar inductors on silicon for integrated RF circuits. / Tarvainen, Esa; Ronkainen, Hannu; Kattelus, Hannu; Riihisaari, Tarja; Kuivalainen, Pekka.

In: Physica Scripta, Vol. T69, 1997, p. 295 - 297.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Planar inductors on silicon for integrated RF circuits

AU - Tarvainen, Esa

AU - Ronkainen, Hannu

AU - Kattelus, Hannu

AU - Riihisaari, Tarja

AU - Kuivalainen, Pekka

PY - 1997

Y1 - 1997

N2 - We have studied the fabrication and modelling of integrated planar inductors on silicon made by using a standard 0.8 μm BiCMOS process. In order to aid the design of circuits including integrated inductors we have developed and tested a semiempirical equivalent circuit model for the planar inductors. The model, which has been implemented in the circuit simulator APLAC, shows good agreement with the measured inductor values, quality factors and S-parameters. Although the measured Q-values are below 10 in the GHz frequency range, the integrated inductors can be utilized in many RF IC applications. As a first demonstration for this we have successfully applied an integrated inductor to a low voltage monolithic voltage-controlled oscillator circuit at 1.8 GHz.

AB - We have studied the fabrication and modelling of integrated planar inductors on silicon made by using a standard 0.8 μm BiCMOS process. In order to aid the design of circuits including integrated inductors we have developed and tested a semiempirical equivalent circuit model for the planar inductors. The model, which has been implemented in the circuit simulator APLAC, shows good agreement with the measured inductor values, quality factors and S-parameters. Although the measured Q-values are below 10 in the GHz frequency range, the integrated inductors can be utilized in many RF IC applications. As a first demonstration for this we have successfully applied an integrated inductor to a low voltage monolithic voltage-controlled oscillator circuit at 1.8 GHz.

U2 - 10.1088/0031-8949/1997/T69/062

DO - 10.1088/0031-8949/1997/T69/062

M3 - Article

VL - T69

SP - 295

EP - 297

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

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