Planar inductors on silicon for integrated RF circuits

Esa Tarvainen, Hannu Ronkainen, Hannu Kattelus, Tarja Riihisaari, Pekka Kuivalainen

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)

    Abstract

    We have studied the fabrication and modelling of integrated planar inductors on silicon made by using a standard 0.8 μm BiCMOS process. In order to aid the design of circuits including integrated inductors we have developed and tested a semiempirical equivalent circuit model for the planar inductors. The model, which has been implemented in the circuit simulator APLAC, shows good agreement with the measured inductor values, quality factors and S-parameters. Although the measured Q-values are below 10 in the GHz frequency range, the integrated inductors can be utilized in many RF IC applications. As a first demonstration for this we have successfully applied an integrated inductor to a low voltage monolithic voltage-controlled oscillator circuit at 1.8 GHz.

    Original languageEnglish
    Pages (from-to)295 - 297
    Number of pages3
    JournalPhysica Scripta
    VolumeT69
    DOIs
    Publication statusPublished - 1997
    MoE publication typeA1 Journal article-refereed
    Event17th Nordic Semiconductor Meeting - Trondheim, Norway
    Duration: 17 Jun 199620 Jun 1996

    Fingerprint

    inductors
    Silicon
    Equivalent Circuit
    Quality Factor
    Low Voltage
    silicon
    Integrated Circuits
    Fabrication
    Simulator
    Voltage
    Modeling
    Model
    Range of data
    voltage controlled oscillators
    equivalent circuits
    low voltage
    simulators
    integrated circuits
    Q factors
    frequency ranges

    Cite this

    Tarvainen, E., Ronkainen, H., Kattelus, H., Riihisaari, T., & Kuivalainen, P. (1997). Planar inductors on silicon for integrated RF circuits. Physica Scripta, T69, 295 - 297. https://doi.org/10.1088/0031-8949/1997/T69/062
    Tarvainen, Esa ; Ronkainen, Hannu ; Kattelus, Hannu ; Riihisaari, Tarja ; Kuivalainen, Pekka. / Planar inductors on silicon for integrated RF circuits. In: Physica Scripta. 1997 ; Vol. T69. pp. 295 - 297.
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    title = "Planar inductors on silicon for integrated RF circuits",
    abstract = "We have studied the fabrication and modelling of integrated planar inductors on silicon made by using a standard 0.8 μm BiCMOS process. In order to aid the design of circuits including integrated inductors we have developed and tested a semiempirical equivalent circuit model for the planar inductors. The model, which has been implemented in the circuit simulator APLAC, shows good agreement with the measured inductor values, quality factors and S-parameters. Although the measured Q-values are below 10 in the GHz frequency range, the integrated inductors can be utilized in many RF IC applications. As a first demonstration for this we have successfully applied an integrated inductor to a low voltage monolithic voltage-controlled oscillator circuit at 1.8 GHz.",
    author = "Esa Tarvainen and Hannu Ronkainen and Hannu Kattelus and Tarja Riihisaari and Pekka Kuivalainen",
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    language = "English",
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    Tarvainen, E, Ronkainen, H, Kattelus, H, Riihisaari, T & Kuivalainen, P 1997, 'Planar inductors on silicon for integrated RF circuits', Physica Scripta, vol. T69, pp. 295 - 297. https://doi.org/10.1088/0031-8949/1997/T69/062

    Planar inductors on silicon for integrated RF circuits. / Tarvainen, Esa; Ronkainen, Hannu; Kattelus, Hannu; Riihisaari, Tarja; Kuivalainen, Pekka.

    In: Physica Scripta, Vol. T69, 1997, p. 295 - 297.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Planar inductors on silicon for integrated RF circuits

    AU - Tarvainen, Esa

    AU - Ronkainen, Hannu

    AU - Kattelus, Hannu

    AU - Riihisaari, Tarja

    AU - Kuivalainen, Pekka

    PY - 1997

    Y1 - 1997

    N2 - We have studied the fabrication and modelling of integrated planar inductors on silicon made by using a standard 0.8 μm BiCMOS process. In order to aid the design of circuits including integrated inductors we have developed and tested a semiempirical equivalent circuit model for the planar inductors. The model, which has been implemented in the circuit simulator APLAC, shows good agreement with the measured inductor values, quality factors and S-parameters. Although the measured Q-values are below 10 in the GHz frequency range, the integrated inductors can be utilized in many RF IC applications. As a first demonstration for this we have successfully applied an integrated inductor to a low voltage monolithic voltage-controlled oscillator circuit at 1.8 GHz.

    AB - We have studied the fabrication and modelling of integrated planar inductors on silicon made by using a standard 0.8 μm BiCMOS process. In order to aid the design of circuits including integrated inductors we have developed and tested a semiempirical equivalent circuit model for the planar inductors. The model, which has been implemented in the circuit simulator APLAC, shows good agreement with the measured inductor values, quality factors and S-parameters. Although the measured Q-values are below 10 in the GHz frequency range, the integrated inductors can be utilized in many RF IC applications. As a first demonstration for this we have successfully applied an integrated inductor to a low voltage monolithic voltage-controlled oscillator circuit at 1.8 GHz.

    U2 - 10.1088/0031-8949/1997/T69/062

    DO - 10.1088/0031-8949/1997/T69/062

    M3 - Article

    VL - T69

    SP - 295

    EP - 297

    JO - Physica Scripta

    JF - Physica Scripta

    SN - 0031-8949

    ER -