We have studied the fabrication and modelling of integrated planar inductors on silicon made by using a standard 0.8 μm BiCMOS process. In order to aid the design of circuits including integrated inductors we have developed and tested a semiempirical equivalent circuit model for the planar inductors. The model, which has been implemented in the circuit simulator APLAC, shows good agreement with the measured inductor values, quality factors and S-parameters. Although the measured Q-values are below 10 in the GHz frequency range, the integrated inductors can be utilized in many RF IC applications. As a first demonstration for this we have successfully applied an integrated inductor to a low voltage monolithic voltage-controlled oscillator circuit at 1.8 GHz.
|295 - 297
|Published - 1997
|MoE publication type
|A1 Journal article-refereed
|17th Nordic Semiconductor Meeting - Trondheim, Norway
Duration: 17 Jun 1996 → 20 Jun 1996