Planar inductors on silicon for integrated RF circuits

Esa Tarvainen, Hannu Ronkainen, Hannu Kattelus, Tarja Riihisaari, Pekka Kuivalainen

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)


    We have studied the fabrication and modelling of integrated planar inductors on silicon made by using a standard 0.8 μm BiCMOS process. In order to aid the design of circuits including integrated inductors we have developed and tested a semiempirical equivalent circuit model for the planar inductors. The model, which has been implemented in the circuit simulator APLAC, shows good agreement with the measured inductor values, quality factors and S-parameters. Although the measured Q-values are below 10 in the GHz frequency range, the integrated inductors can be utilized in many RF IC applications. As a first demonstration for this we have successfully applied an integrated inductor to a low voltage monolithic voltage-controlled oscillator circuit at 1.8 GHz.

    Original languageEnglish
    Pages (from-to)295 - 297
    JournalPhysica Scripta
    Publication statusPublished - 1997
    MoE publication typeA1 Journal article-refereed
    Event17th Nordic Semiconductor Meeting - Trondheim, Norway
    Duration: 17 Jun 199620 Jun 1996


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