Plasma etching characteristics of sputtered tungsten films

Sami Franssila, Jyrki Molarius, Jaakko Saarilahti

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

The relationship between microstructure of tungsten thin films and plasma etching properties has been studied. Rutherford backscattering, nuclear reaction analysis 16O(α,α)16O, X-ray diffraction, and resistivity measurements have been used to characterize the sputter deposited films. Independent of deposition pressure, the films were all high density, low oxygen (<1 at%), low resistivity and bccot-phase. Etch rate differences of 40% were measured in pure SF6, whereas only 10% differences were seen in SF6/Cl2 and SF6/O2BCi3 plasmas. Intentional oxygen doping (up to 2 at-%) increases the etch rate in pure SF6 plasma by 75%, where as the etch rate in SF6/O2/BCl3 plasma only increases 25%. The role of film density (porosity) and oxygen incorporation on etching mechanism are discussed.
Original languageEnglish
Title of host publicationAdvanced Metallization and Processing for Semiconductor Devices and Circuits II
Subtitle of host publicationSymposium C
EditorsJames M.E. Harper, Avishay Katz, Shyam P. Murarka, Yves I. Nissim
Place of PublicationPittsburgh
PublisherMaterials Research Society
Pages341-346
ISBN (Print)978-1-558-99155-2
DOIs
Publication statusPublished - 1992
MoE publication typeA4 Article in a conference publication
EventMaterials Research Society Spring Meeting 1992 - San Francisco, United States
Duration: 27 Apr 19921 May 1992

Publication series

SeriesMaterials Research Society Symposia Proceedings
Volume260
ISSN0272-9172

Conference

ConferenceMaterials Research Society Spring Meeting 1992
CountryUnited States
CitySan Francisco
Period27/04/921/05/92

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    Franssila, S., Molarius, J., & Saarilahti, J. (1992). Plasma etching characteristics of sputtered tungsten films. In J. M. E. Harper, A. Katz, S. P. Murarka, & Y. I. Nissim (Eds.), Advanced Metallization and Processing for Semiconductor Devices and Circuits II: Symposium C (pp. 341-346). Materials Research Society. Materials Research Society Symposia Proceedings, Vol.. 260 https://doi.org/10.1557/PROC-260-341