Plasma etching characteristics of sputtered tungsten films

Sami Franssila; Jyrki Molarius; Jaakko Saarilahti

doi:10.1557/PROC-260-341

Plasma etching characteristics of sputtered tungsten films

Sami Franssila, Jyrki Molarius, Jaakko Saarilahti

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

The relationship between microstructure of tungsten thin films and plasma etching properties has been studied. Rutherford backscattering, nuclear reaction analysis ¹⁶O(α,α)¹⁶O, X-ray diffraction, and resistivity measurements have been used to characterize the sputter deposited films. Independent of deposition pressure, the films were all high density, low oxygen (<1 at%), low resistivity and bccot-phase. Etch rate differences of 40% were measured in pure SF₆, whereas only 10% differences were seen in SF₆/Cl₂ and SF₆/O₂BCi₃ plasmas. Intentional oxygen doping (up to 2 at-%) increases the etch rate in pure SF₆ plasma by 75%, where as the etch rate in SF₆/O₂/BCl₃ plasma only increases 25%. The role of film density (porosity) and oxygen incorporation on etching mechanism are discussed.

Original language	English
Title of host publication	Advanced Metallization and Processing for Semiconductor Devices and Circuits II
Subtitle of host publication	Symposium C
Editors	James M.E. Harper, Avishay Katz, Shyam P. Murarka, Yves I. Nissim
Place of Publication	Pittsburgh
Publisher	Materials Research Society
Pages	341-346
ISBN (Print)	978-1-558-99155-2
DOIs	https://doi.org/10.1557/PROC-260-341
Publication status	Published - 1992
MoE publication type	A4 Article in a conference publication
Event	Materials Research Society Spring Meeting 1992 - San Francisco, United States Duration: 27 Apr 1992 → 1 May 1992

Publication series

Series	Materials Research Society Symposia Proceedings
Volume	260
ISSN	0272-9172

Conference

Conference	Materials Research Society Spring Meeting 1992
Country/Territory	United States
City	San Francisco
Period	27/04/92 → 1/05/92

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10.1557/PROC-260-341

Cite this

Franssila, Sami ; Molarius, Jyrki ; Saarilahti, Jaakko. / Plasma etching characteristics of sputtered tungsten films. Advanced Metallization and Processing for Semiconductor Devices and Circuits II: Symposium C. editor / James M.E. Harper ; Avishay Katz ; Shyam P. Murarka ; Yves I. Nissim. Pittsburgh : Materials Research Society, 1992. pp. 341-346 (Materials Research Society Symposia Proceedings, Vol. 260).

@inproceedings{e3121b2531db49a5afd1af4f2157206d,

title = "Plasma etching characteristics of sputtered tungsten films",

abstract = "The relationship between microstructure of tungsten thin films and plasma etching properties has been studied. Rutherford backscattering, nuclear reaction analysis 16O(α,α)16O, X-ray diffraction, and resistivity measurements have been used to characterize the sputter deposited films. Independent of deposition pressure, the films were all high density, low oxygen (<1 at%), low resistivity and bccot-phase. Etch rate differences of 40% were measured in pure SF6, whereas only 10% differences were seen in SF6/Cl2 and SF6/O2BCi3 plasmas. Intentional oxygen doping (up to 2 at-%) increases the etch rate in pure SF6 plasma by 75%, where as the etch rate in SF6/O2/BCl3 plasma only increases 25%. The role of film density (porosity) and oxygen incorporation on etching mechanism are discussed.",

author = "Sami Franssila and Jyrki Molarius and Jaakko Saarilahti",

note = "Project code: PUO1020; Materials Research Society Spring Meeting 1992 ; Conference date: 27-04-1992 Through 01-05-1992",

year = "1992",

doi = "10.1557/PROC-260-341",

language = "English",

isbn = "978-1-558-99155-2",

series = "Materials Research Society Symposia Proceedings",

publisher = "Materials Research Society",

pages = "341--346",

editor = "Harper, {James M.E.} and Avishay Katz and Murarka, {Shyam P.} and Nissim, {Yves I.}",

booktitle = "Advanced Metallization and Processing for Semiconductor Devices and Circuits II",

address = "United States",

}

Franssila, S, Molarius, J & Saarilahti, J 1992, Plasma etching characteristics of sputtered tungsten films. in JME Harper, A Katz, SP Murarka & YI Nissim (eds), Advanced Metallization and Processing for Semiconductor Devices and Circuits II: Symposium C. Materials Research Society, Pittsburgh, Materials Research Society Symposia Proceedings, vol. 260, pp. 341-346, Materials Research Society Spring Meeting 1992, San Francisco, California, United States, 27/04/92. https://doi.org/10.1557/PROC-260-341

Plasma etching characteristics of sputtered tungsten films. / Franssila, Sami; Molarius, Jyrki; Saarilahti, Jaakko.
Advanced Metallization and Processing for Semiconductor Devices and Circuits II: Symposium C. ed. / James M.E. Harper; Avishay Katz; Shyam P. Murarka; Yves I. Nissim. Pittsburgh: Materials Research Society, 1992. p. 341-346 (Materials Research Society Symposia Proceedings, Vol. 260).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Plasma etching characteristics of sputtered tungsten films

AU - Franssila, Sami

AU - Molarius, Jyrki

AU - Saarilahti, Jaakko

N1 - Project code: PUO1020

PY - 1992

Y1 - 1992

N2 - The relationship between microstructure of tungsten thin films and plasma etching properties has been studied. Rutherford backscattering, nuclear reaction analysis 16O(α,α)16O, X-ray diffraction, and resistivity measurements have been used to characterize the sputter deposited films. Independent of deposition pressure, the films were all high density, low oxygen (<1 at%), low resistivity and bccot-phase. Etch rate differences of 40% were measured in pure SF6, whereas only 10% differences were seen in SF6/Cl2 and SF6/O2BCi3 plasmas. Intentional oxygen doping (up to 2 at-%) increases the etch rate in pure SF6 plasma by 75%, where as the etch rate in SF6/O2/BCl3 plasma only increases 25%. The role of film density (porosity) and oxygen incorporation on etching mechanism are discussed.

AB - The relationship between microstructure of tungsten thin films and plasma etching properties has been studied. Rutherford backscattering, nuclear reaction analysis 16O(α,α)16O, X-ray diffraction, and resistivity measurements have been used to characterize the sputter deposited films. Independent of deposition pressure, the films were all high density, low oxygen (<1 at%), low resistivity and bccot-phase. Etch rate differences of 40% were measured in pure SF6, whereas only 10% differences were seen in SF6/Cl2 and SF6/O2BCi3 plasmas. Intentional oxygen doping (up to 2 at-%) increases the etch rate in pure SF6 plasma by 75%, where as the etch rate in SF6/O2/BCl3 plasma only increases 25%. The role of film density (porosity) and oxygen incorporation on etching mechanism are discussed.

U2 - 10.1557/PROC-260-341

DO - 10.1557/PROC-260-341

M3 - Conference article in proceedings

SN - 978-1-558-99155-2

T3 - Materials Research Society Symposia Proceedings

SP - 341

EP - 346

BT - Advanced Metallization and Processing for Semiconductor Devices and Circuits II

A2 - Harper, James M.E.

A2 - Katz, Avishay

A2 - Murarka, Shyam P.

A2 - Nissim, Yves I.

PB - Materials Research Society

CY - Pittsburgh

T2 - Materials Research Society Spring Meeting 1992

Y2 - 27 April 1992 through 1 May 1992

ER -

Franssila S, Molarius J, Saarilahti J. Plasma etching characteristics of sputtered tungsten films. In Harper JME, Katz A, Murarka SP, Nissim YI, editors, Advanced Metallization and Processing for Semiconductor Devices and Circuits II: Symposium C. Pittsburgh: Materials Research Society. 1992. p. 341-346. (Materials Research Society Symposia Proceedings, Vol. 260). doi: 10.1557/PROC-260-341

Plasma etching characteristics of sputtered tungsten films

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