Abstract
Original language | English |
---|---|
Pages (from-to) | 565 - 582 |
Number of pages | 18 |
Journal | Materials Science Forum |
Volume | 140-142 |
DOIs | |
Publication status | Published - 1993 |
MoE publication type | A1 Journal article-refereed |
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Plasma etching of patterned tungsten. / Franssila, Sami.
In: Materials Science Forum, Vol. 140-142, 1993, p. 565 - 582.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Plasma etching of patterned tungsten
AU - Franssila, Sami
PY - 1993
Y1 - 1993
N2 - Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated circuit process engineering. The emphasis is on patterned tungsten etching for silicon device and X-ray mask fabrication. After introducing tungsten etch chemistries and mechanisms, microstructural aspects of tungsten films (crystal structure, grain size, film density, defects, impurities) in relation to etching are discussed. Approaches to etch process optimization are presented, and the current state-of-the-art of patterned tungsten etching is reviewed.
AB - Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated circuit process engineering. The emphasis is on patterned tungsten etching for silicon device and X-ray mask fabrication. After introducing tungsten etch chemistries and mechanisms, microstructural aspects of tungsten films (crystal structure, grain size, film density, defects, impurities) in relation to etching are discussed. Approaches to etch process optimization are presented, and the current state-of-the-art of patterned tungsten etching is reviewed.
U2 - 10.4028/www.scientific.net/MSF.140-142.565
DO - 10.4028/www.scientific.net/MSF.140-142.565
M3 - Article
VL - 140-142
SP - 565
EP - 582
JO - Materials Science Forum
JF - Materials Science Forum
SN - 0255-5476
ER -