Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated circuit process engineering. The emphasis is on patterned tungsten etching for silicon device and X-ray mask fabrication. After introducing tungsten etch chemistries and mechanisms, microstructural aspects of tungsten films (crystal structure, grain size, film density, defects, impurities) in relation to etching are discussed. Approaches to etch process optimization are presented, and the current state-of-the-art of patterned tungsten etching is reviewed.
|Pages (from-to)||565 - 582|
|Number of pages||18|
|Journal||Materials Science Forum|
|Publication status||Published - 1993|
|MoE publication type||A1 Journal article-refereed|