Plasma etching of patterned tungsten

Sami Franssila

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated circuit process engineering. The emphasis is on patterned tungsten etching for silicon device and X-ray mask fabrication. After introducing tungsten etch chemistries and mechanisms, microstructural aspects of tungsten films (crystal structure, grain size, film density, defects, impurities) in relation to etching are discussed. Approaches to etch process optimization are presented, and the current state-of-the-art of patterned tungsten etching is reviewed.
Original languageEnglish
Pages (from-to)565 - 582
Number of pages18
JournalMaterials Science Forum
Volume140-142
DOIs
Publication statusPublished - 1993
MoE publication typeA1 Journal article-refereed

Fingerprint

Tungsten
Plasma etching
plasma etching
tungsten
Etching
etching
Defect density
Process engineering
Silicon
integrated circuits
Integrated circuits
Masks
masks
Crystal structure
grain size
engineering
Impurities
chemistry
Fabrication
X rays

Cite this

Franssila, Sami. / Plasma etching of patterned tungsten. In: Materials Science Forum. 1993 ; Vol. 140-142. pp. 565 - 582.
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Plasma etching of patterned tungsten. / Franssila, Sami.

In: Materials Science Forum, Vol. 140-142, 1993, p. 565 - 582.

Research output: Contribution to journalArticleScientificpeer-review

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