Abstract
This paper reports a novel process sequence for fabricating
micromechanical devices on silicon-on-insulator (SOI) wafers. Among the
merits of the described process are its improved immunity to stiction
and elimination of conductor metal endurance problems during sacrificial
etching in hydrofluoric acid. With this novel process one can
controllably embed vacuum cavities within SOI substrates. Further
processing of such cavity wafers enables realization of a wide variety
of micromechanical devices based on single crystalline silicon or even
integrated read-out circuitry.
Original language | English |
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Pages (from-to) | 346 - 350 |
Number of pages | 5 |
Journal | Microsystem Technologies |
Volume | 10 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2004 |
MoE publication type | A1 Journal article-refereed |
Keywords
- SOI
- wafer bonding
- wafers
- MEMS