Abstract
This paper reports a novel process sequence for making micromechanical devices on silicon on insulator (SOI) wafers. The merits of the new process are its improved immunity to stiction and elimination of conductor metal endurance problems during sacrificial etching with hydrofluoric acid (HF). With this new process one can fabricate vacuum cavities on blank SOI substrates. Further processing of these cavity wafers enables the realization of a wide variety of single crystal micromechanical devices.
Original language | English |
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Title of host publication | Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS 2003 |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 229-233 |
ISBN (Print) | 0-7803-7066-X |
DOIs | |
Publication status | Published - 2003 |
MoE publication type | A4 Article in a conference publication |
Event | 5th Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2003 - Cannes-Mandeliou, France Duration: 5 May 2003 → 7 May 2003 |
Conference
Conference | 5th Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2003 |
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Country/Territory | France |
City | Cannes-Mandeliou |
Period | 5/05/03 → 7/05/03 |
Keywords
- silicon-on-insulator
- SOI
- micromachining
- vacuum sealing
- porous silicon
- silicon
- MEMS
- fabrication