Poly(ionic liquid) dielectric for high performing P- and N-type single walled carbon nanotube transistors

Mathieu N. Tousignant, May Ourabi, Jukka Niskanen, Brendan Mirka, William J. Bodnaryk, Alex Adronov, Benoît H. Lessard (Corresponding Author)

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)


There is an increasing demand for low-cost and high-performance electronics which has stimulated a need for new high-performance dielectric materials. We have developed a facile synthesis of poly(2-(methacryloyloxy)ethyl trimethylammonium bis(trifluoromethylsulfonyl)azanide-ran-methyl methacrylate) (P(METATFSI-MMA)), a polymeric ionic liquid that can be used as a high-performance dielectric for semiconducting single walled carbon nanotube (SWCNTs) thin film transistors (TFTs). The P(METATFSI-MMA) polymer was synthesized at both 35 and 62 mol% of 2-(methacryloyloxy)ethyl trimethylammonium bis(trifluoromethylsulfonyl)azanide and produced p- and n-type devices that functioned under ambient conditions. These TFTs were then used to study the impact of electrochemical doping on the performance of SWCNT TFTs when switching from n-type, where an electrical double layer is formed, to p-type, where the TFSI- anions are free to interact with the SWCNTs. The TFTs operating in p-type had higher current on/off ratios and a larger transconductance than those operating in n-type, which is characteristic of electrochemically doped transistors. Furthermore, we tested the impact of operating frequency on device performance and discovered that decreasing the operating frequency of the TFTs resulted in a decreased hysteresis. The decrease in hysteresis was also observed to be more significant for the 35 mol% polymer.

Original languageEnglish
Article number034004
Number of pages12
JournalFlexible and Printed Electronics
Issue number3
Publication statusPublished - 3 Oct 2022
MoE publication typeA1 Journal article-refereed


  • poly(ionic liquid)
  • polyelectrolyte
  • polymer dielectric
  • single walled carbon nanotubes
  • thin film transistors


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