Polymer field-effect transistors for transport property studies

Jari Paloheimo; Eero Punkka; Henrik Stubb; Pekka Kuivalainen

doi:10.1007/978-1-4899-2088-1_74

Polymer field-effect transistors for transport property studies

Jari Paloheimo
, Eero Punkka
, Henrik Stubb
, Pekka Kuivalainen

VTT Technical Research Centre of Finland

VTT (former employee or external)
Helsinki University of Technology

Research output: Chapter in Book/Report/Conference proceeding › Chapter or book article › Professional

Abstract

Thin film field-effect transistors have been prepared of poly(3-alkyl-thiophenes) by using spin-coating techniques. The devices are used in the determination of the charge carrier mobility μ, dc conductivity σ, and the carrier concentration p₀. Poly(3-hexylthiophene) is characterized in a wide temperature range T = 130–430 k, and possible transport mechanisms are discussed.

Original language	English
Title of host publication	Lower Dimensional Systems and Molecular Electronics
Editors	Robert M. Metzger, Peter Day, George C. Papavassiliou
Place of Publication	New York
Publisher	Plenum
Pages	635-641
ISBN (Electronic)	978-1-4899-2088-1
ISBN (Print)	978-0-306-43826-4, 978-1-4899-2090-4
DOIs	https://doi.org/10.1007/978-1-4899-2088-1_74
Publication status	Published - 1991
MoE publication type	D2 Article in professional manuals or guides or professional information systems or text book material
Event	Lower-Dimensional Systems and Molecular Electronics - Spetses, Greece Duration: 12 Jun 1989 → 23 Sept 1989

Publication series

Series	NATO Science Series B: Physics
Volume	248
ISSN	0258-1221

Conference

Conference	Lower-Dimensional Systems and Molecular Electronics
Country/Territory	Greece
City	Spetses
Period	12/06/89 → 23/09/89

Access to Document

10.1007/978-1-4899-2088-1_74

Cite this

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title = "Polymer field-effect transistors for transport property studies",

abstract = "Thin film field-effect transistors have been prepared of poly(3-alkyl-thiophenes) by using spin-coating techniques. The devices are used in the determination of the charge carrier mobility μ, dc conductivity σ, and the carrier concentration p0. Poly(3-hexylthiophene) is characterized in a wide temperature range T = 130–430 k, and possible transport mechanisms are discussed.",

author = "Jari Paloheimo and Eero Punkka and Henrik Stubb and Pekka Kuivalainen",

year = "1991",

doi = "10.1007/978-1-4899-2088-1\_74",

language = "English",

isbn = "978-0-306-43826-4",

series = "NATO Science Series B: Physics",

publisher = "Plenum",

pages = "635--641",

editor = "Metzger, \{Robert M.\} and Peter Day and Papavassiliou, \{George C.\}",

booktitle = "Lower Dimensional Systems and Molecular Electronics",

address = "United States",

note = "Lower-Dimensional Systems and Molecular Electronics ; Conference date: 12-06-1989 Through 23-09-1989",

}

Paloheimo, J, Punkka, E, Stubb, H & Kuivalainen, P 1991, Polymer field-effect transistors for transport property studies. in RM Metzger, P Day & GC Papavassiliou (eds), Lower Dimensional Systems and Molecular Electronics. Plenum, New York, NATO Science Series B: Physics, vol. 248, pp. 635-641, Lower-Dimensional Systems and Molecular Electronics, Spetses, Greece, 12/06/89. https://doi.org/10.1007/978-1-4899-2088-1_74

Polymer field-effect transistors for transport property studies. / Paloheimo, Jari; Punkka, Eero; Stubb, Henrik et al.
Lower Dimensional Systems and Molecular Electronics. ed. / Robert M. Metzger; Peter Day; George C. Papavassiliou. New York: Plenum, 1991. p. 635-641 (NATO Science Series B: Physics, Vol. 248).

Research output: Chapter in Book/Report/Conference proceeding › Chapter or book article › Professional

TY - CHAP

T1 - Polymer field-effect transistors for transport property studies

AU - Paloheimo, Jari

AU - Punkka, Eero

AU - Stubb, Henrik

AU - Kuivalainen, Pekka

PY - 1991

Y1 - 1991

N2 - Thin film field-effect transistors have been prepared of poly(3-alkyl-thiophenes) by using spin-coating techniques. The devices are used in the determination of the charge carrier mobility μ, dc conductivity σ, and the carrier concentration p0. Poly(3-hexylthiophene) is characterized in a wide temperature range T = 130–430 k, and possible transport mechanisms are discussed.

AB - Thin film field-effect transistors have been prepared of poly(3-alkyl-thiophenes) by using spin-coating techniques. The devices are used in the determination of the charge carrier mobility μ, dc conductivity σ, and the carrier concentration p0. Poly(3-hexylthiophene) is characterized in a wide temperature range T = 130–430 k, and possible transport mechanisms are discussed.

U2 - 10.1007/978-1-4899-2088-1_74

DO - 10.1007/978-1-4899-2088-1_74

M3 - Chapter or book article

SN - 978-0-306-43826-4

SN - 978-1-4899-2090-4

T3 - NATO Science Series B: Physics

SP - 635

EP - 641

BT - Lower Dimensional Systems and Molecular Electronics

A2 - Metzger, Robert M.

A2 - Day, Peter

A2 - Papavassiliou, George C.

PB - Plenum

CY - New York

T2 - Lower-Dimensional Systems and Molecular Electronics

Y2 - 12 June 1989 through 23 September 1989

ER -

Polymer field-effect transistors for transport property studies

Abstract

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