Abstract
We demonstrate high performance porous Si based supercapacitor electrodes that can be utilized in integrated micro supercapacitors. The key enabler here is ultra-thin TiN coating of the porous Si matrix leading to high power and stability. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing over 5 000 charge/discharge cycles.
Original language | English |
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Title of host publication | Proceedings of the 5th Electronics System-integration Technology Conference, ESTC 2014 |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Number of pages | 3 |
ISBN (Electronic) | 978-1-4799-4026-4 |
DOIs | |
Publication status | Published - 2014 |
MoE publication type | A4 Article in a conference publication |
Event | 5th Electronics System-Integration Technology Conference, ESTC 2014 - Helsinki, Finland Duration: 16 Sept 2014 → 18 Sept 2014 Conference number: 5th |
Conference
Conference | 5th Electronics System-Integration Technology Conference, ESTC 2014 |
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Abbreviated title | ESTC 2014 |
Country/Territory | Finland |
City | Helsinki |
Period | 16/09/14 → 18/09/14 |