Potential of amorphous Mo-Si-N films for nanoelectronic applications

Mari Ylönen (Corresponding Author), Hannu Kattelus, A. Savin, P. Kivinen, Tomi Haatainen, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

The properties of amorphous metallic molybdenum–silicon–nitrogen (Mo–Si–N) films were characterised for use in nanoelectronic applications. The films were deposited by co-sputtering of molybdenum and silicon targets in a gas mixture of argon and nitrogen. The atomic composition, microstructure and surface roughness were studied by RBS, TEM and AFM analyses, respectively. The electrical properties were investigated in the temperature range 80 mK to 300 K. No transition into a superconductive state was observed. Nanoscale wires were fabricated using electron beam lithography with their properties measured as a function of temperature.
Original languageEnglish
Pages (from-to)337-340
Number of pages4
JournalMicroelectronic Engineering
Volume70
Issue number2-4
DOIs
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

Fingerprint

Nanoelectronics
roughness
Metallic films
Molybdenum
Electron beam lithography
Argon
Silicon
Amorphous films
Gas mixtures
molybdenum
Sputtering
gas mixtures
surface roughness
Electric properties
Nitrogen
lithography
sputtering
Surface roughness
electrical properties
argon

Keywords

  • amorphous metal film
  • mictamict alloy
  • Mo-Si-N
  • temperature coefficient of resistivity
  • nanoscale wiring

Cite this

Ylönen, Mari ; Kattelus, Hannu ; Savin, A. ; Kivinen, P. ; Haatainen, Tomi ; Ahopelto, Jouni. / Potential of amorphous Mo-Si-N films for nanoelectronic applications. In: Microelectronic Engineering. 2003 ; Vol. 70, No. 2-4. pp. 337-340.
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abstract = "The properties of amorphous metallic molybdenum–silicon–nitrogen (Mo–Si–N) films were characterised for use in nanoelectronic applications. The films were deposited by co-sputtering of molybdenum and silicon targets in a gas mixture of argon and nitrogen. The atomic composition, microstructure and surface roughness were studied by RBS, TEM and AFM analyses, respectively. The electrical properties were investigated in the temperature range 80 mK to 300 K. No transition into a superconductive state was observed. Nanoscale wires were fabricated using electron beam lithography with their properties measured as a function of temperature.",
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Potential of amorphous Mo-Si-N films for nanoelectronic applications. / Ylönen, Mari (Corresponding Author); Kattelus, Hannu; Savin, A.; Kivinen, P.; Haatainen, Tomi; Ahopelto, Jouni.

In: Microelectronic Engineering, Vol. 70, No. 2-4, 2003, p. 337-340.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Potential of amorphous Mo-Si-N films for nanoelectronic applications

AU - Ylönen, Mari

AU - Kattelus, Hannu

AU - Savin, A.

AU - Kivinen, P.

AU - Haatainen, Tomi

AU - Ahopelto, Jouni

N1 - Project code: T3SU00208

PY - 2003

Y1 - 2003

N2 - The properties of amorphous metallic molybdenum–silicon–nitrogen (Mo–Si–N) films were characterised for use in nanoelectronic applications. The films were deposited by co-sputtering of molybdenum and silicon targets in a gas mixture of argon and nitrogen. The atomic composition, microstructure and surface roughness were studied by RBS, TEM and AFM analyses, respectively. The electrical properties were investigated in the temperature range 80 mK to 300 K. No transition into a superconductive state was observed. Nanoscale wires were fabricated using electron beam lithography with their properties measured as a function of temperature.

AB - The properties of amorphous metallic molybdenum–silicon–nitrogen (Mo–Si–N) films were characterised for use in nanoelectronic applications. The films were deposited by co-sputtering of molybdenum and silicon targets in a gas mixture of argon and nitrogen. The atomic composition, microstructure and surface roughness were studied by RBS, TEM and AFM analyses, respectively. The electrical properties were investigated in the temperature range 80 mK to 300 K. No transition into a superconductive state was observed. Nanoscale wires were fabricated using electron beam lithography with their properties measured as a function of temperature.

KW - amorphous metal film

KW - mictamict alloy

KW - Mo-Si-N

KW - temperature coefficient of resistivity

KW - nanoscale wiring

U2 - 10.1016/S0167-9317(03)00425-8

DO - 10.1016/S0167-9317(03)00425-8

M3 - Article

VL - 70

SP - 337

EP - 340

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 2-4

ER -