Potential of amorphous Mo-Si-N films for nanoelectronic applications

Mari Ylönen (Corresponding Author), Hannu Kattelus, A. Savin, P. Kivinen, Tomi Haatainen, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)

    Abstract

    The properties of amorphous metallic molybdenum–silicon–nitrogen (Mo–Si–N) films were characterised for use in nanoelectronic applications. The films were deposited by co-sputtering of molybdenum and silicon targets in a gas mixture of argon and nitrogen. The atomic composition, microstructure and surface roughness were studied by RBS, TEM and AFM analyses, respectively. The electrical properties were investigated in the temperature range 80 mK to 300 K. No transition into a superconductive state was observed. Nanoscale wires were fabricated using electron beam lithography with their properties measured as a function of temperature.
    Original languageEnglish
    Pages (from-to)337-340
    Number of pages4
    JournalMicroelectronic Engineering
    Volume70
    Issue number2-4
    DOIs
    Publication statusPublished - 2003
    MoE publication typeA1 Journal article-refereed

    Keywords

    • amorphous metal film
    • mictamict alloy
    • Mo-Si-N
    • temperature coefficient of resistivity
    • nanoscale wiring

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