Potential of amorphous Mo-Si-N films for nanoelectronic applications

Mari Ylönen; Hannu Kattelus; A. Savin; P. Kivinen; Tomi Haatainen; Jouni Ahopelto

doi:10.1016/S0167-9317(03)00425-8

Potential of amorphous Mo-Si-N films for nanoelectronic applications

Mari Ylönen^*
, Hannu Kattelus
, A. Savin
, P. Kivinen
, Tomi Haatainen
, Jouni Ahopelto

^*Corresponding author for this work

University of Jyväskylä
Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Abstract

The properties of amorphous metallic molybdenum–silicon–nitrogen (Mo–Si–N) films were characterised for use in nanoelectronic applications. The films were deposited by co-sputtering of molybdenum and silicon targets in a gas mixture of argon and nitrogen. The atomic composition, microstructure and surface roughness were studied by RBS, TEM and AFM analyses, respectively. The electrical properties were investigated in the temperature range 80 mK to 300 K. No transition into a superconductive state was observed. Nanoscale wires were fabricated using electron beam lithography with their properties measured as a function of temperature.

Original language	English
Pages (from-to)	337-340
Journal	Microelectronic Engineering
Volume	70
Issue number	2-4
DOIs	https://doi.org/10.1016/S0167-9317(03)00425-8
Publication status	Published - 2003
MoE publication type	A1 Journal article-refereed

Keywords

amorphous metal film
mictamict alloy
Mo-Si-N
temperature coefficient of resistivity
nanoscale wiring

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10.1016/S0167-9317(03)00425-8

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title = "Potential of amorphous Mo-Si-N films for nanoelectronic applications",

abstract = "The properties of amorphous metallic molybdenum–silicon–nitrogen (Mo–Si–N) films were characterised for use in nanoelectronic applications. The films were deposited by co-sputtering of molybdenum and silicon targets in a gas mixture of argon and nitrogen. The atomic composition, microstructure and surface roughness were studied by RBS, TEM and AFM analyses, respectively. The electrical properties were investigated in the temperature range 80 mK to 300 K. No transition into a superconductive state was observed. Nanoscale wires were fabricated using electron beam lithography with their properties measured as a function of temperature.",

keywords = "amorphous metal film, mictamict alloy, Mo-Si-N, temperature coefficient of resistivity, nanoscale wiring",

author = "Mari Yl{\"o}nen and Hannu Kattelus and A. Savin and P. Kivinen and Tomi Haatainen and Jouni Ahopelto",

note = "Project code: T3SU00208",

year = "2003",

doi = "10.1016/S0167-9317(03)00425-8",

language = "English",

volume = "70",

pages = "337--340",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "2-4",

}

TY - JOUR

T1 - Potential of amorphous Mo-Si-N films for nanoelectronic applications

AU - Ylönen, Mari

AU - Kattelus, Hannu

AU - Savin, A.

AU - Kivinen, P.

AU - Haatainen, Tomi

AU - Ahopelto, Jouni

N1 - Project code: T3SU00208

PY - 2003

Y1 - 2003

N2 - The properties of amorphous metallic molybdenum–silicon–nitrogen (Mo–Si–N) films were characterised for use in nanoelectronic applications. The films were deposited by co-sputtering of molybdenum and silicon targets in a gas mixture of argon and nitrogen. The atomic composition, microstructure and surface roughness were studied by RBS, TEM and AFM analyses, respectively. The electrical properties were investigated in the temperature range 80 mK to 300 K. No transition into a superconductive state was observed. Nanoscale wires were fabricated using electron beam lithography with their properties measured as a function of temperature.

AB - The properties of amorphous metallic molybdenum–silicon–nitrogen (Mo–Si–N) films were characterised for use in nanoelectronic applications. The films were deposited by co-sputtering of molybdenum and silicon targets in a gas mixture of argon and nitrogen. The atomic composition, microstructure and surface roughness were studied by RBS, TEM and AFM analyses, respectively. The electrical properties were investigated in the temperature range 80 mK to 300 K. No transition into a superconductive state was observed. Nanoscale wires were fabricated using electron beam lithography with their properties measured as a function of temperature.

KW - amorphous metal film

KW - mictamict alloy

KW - Mo-Si-N

KW - temperature coefficient of resistivity

KW - nanoscale wiring

U2 - 10.1016/S0167-9317(03)00425-8

DO - 10.1016/S0167-9317(03)00425-8

M3 - Article

SN - 0167-9317

VL - 70

SP - 337

EP - 340

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 2-4

ER -

Potential of amorphous Mo-Si-N films for nanoelectronic applications

Abstract

Keywords

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