Potential of amorphous Mo-Si-N films for nanoelectronic applications

Keyphrases

• Si-N 100%
• Nanoelectronic Applications 100%
• Surface Roughness 50%
• Microstructure 50%
• Electrical Properties 50%
• Argon 50%
• Temperature Range 50%
• Electron Beam Lithography 50%
• Gas Mixture 50%
• Superconductive 50%
• Co-sputtering 50%
• In Situ TEM 50%
• Silicon Target 50%
• Atomic Composition 50%
• AFM Analysis 50%
• Atomic Surface 50%
• RBS Analysis 50%
• Molybdenum Target 50%

INIS

• applications 100%
• films 100%
• nanoelectronics 100%
• mixtures 33%
• surfaces 33%
• silicon 33%
• roughness 33%
• wires 33%
• microstructure 33%
• temperature dependence 33%
• electrical properties 33%
• gases 33%
• sputtering 33%
• nanostructures 33%
• nitrogen 33%
• afm 33%
• argon 33%
• temperature range 33%
• molybdenum 33%
• electron beams 33%
• rbs 33%

Material Science

• Film 100%
• Surface Roughness 33%
• Lithography 33%
• Molybdenum 33%
• Silicon 33%
• Gas Mixture 33%