Abstract
Power-efficient thermo-optic phase shifters have been demonstrated using 3 µm thick silicon on insulator (SOI) waveguides fabricated on cavity-SOI wafers. In cavity-SOI the cavities are premade in the SOI wafer which simplifies the processing of the waveguides with thermally insulated heater structures. Measurement results of asymmetric Mach-Zehnder interferometric TO switches show a 10-fold decrease in required power for a π phase shift in devices fabricated on cavity-SOI when compared to devices fabricated on plain SOI. With the cavities the required heating power for the π phase shift is only 2.1 mW. Numerical simulations support the experimental results.
Original language | English |
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Title of host publication | Silicon Photonics XIX |
Editors | Graham T. Reed, Andrew P. Knights |
Publisher | International Society for Optics and Photonics SPIE |
Number of pages | 8 |
ISBN (Electronic) | 978-1-5106-7042-6 |
DOIs | |
Publication status | Published - 2024 |
MoE publication type | A4 Article in a conference publication |
Event | Silicon Photonics XIX 2024 - San Francisco, United States Duration: 29 Jan 2024 → 31 Jan 2024 |
Publication series
Series | Proceedings of SPIE |
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Volume | 12891 |
ISSN | 0277-786X |
Conference
Conference | Silicon Photonics XIX 2024 |
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Country/Territory | United States |
City | San Francisco |
Period | 29/01/24 → 31/01/24 |
Funding
This work has received funding from Business Finland funded projects RAPSI and PICAP. The work is also part of the Academy of Finland Flagship Programme, Photonics Research and Innovation (PREIN).
Keywords
- cavity-SOI
- silicon photonics
- thermo-optic phase shifter