Practical methods for millimeter wave on-wafer measurements of active devices at 50-110 GHz

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Abstract

Methods are presented to improve measurement accuracy in on-wafer measurements of active devices at millimeter wave frequencies. The scope of the paper is in on-wafer measurements but the methods presented here, can also be used in coaxial or waveguide based measurements of active devices.
Original languageEnglish
Title of host publicationProceedings of the International Joint Conference of the 6th Topical Symposium on Millimeter Waves (TSMMW2004) and the 5th MINT Millimeter-Wave International Symposium (MINT-MIS)
PublisherCommunications Research Laboratory
Pages118-121
Publication statusPublished - 2004
MoE publication typeNot Eligible
EventInternational Joint Conference of the 6th Topical Symposium on Millimeter Waves, TSMMW 2004 and the 5th MINT Millimeter-Wave International Symposium, MINT-MIS 2004. - Yokosuka, Japan
Duration: 26 Feb 200427 Feb 2004

Conference

ConferenceInternational Joint Conference of the 6th Topical Symposium on Millimeter Waves, TSMMW 2004 and the 5th MINT Millimeter-Wave International Symposium, MINT-MIS 2004.
CountryJapan
CityYokosuka
Period26/02/0427/02/04

Keywords

  • noise figure
  • on-wafer measurements
  • LNA
  • HEMT

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