Precision measurements of quantum hall resistance plateau in doping-controlled graphene device

Dong-Hun Chae, Wan-Seop Kim, Alexandre Satrapinski, Sergei Novikov

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

We report preliminary results of precision measurements of the graphene quantum Hall resistance plateau value with respect to magnetic field, temperature and applied current. Resistance value of SiC graphene Hall device was modulated by chemical doping, heating, and UV irradiation at the ambient condition. Precision measurements for Rh (filing factor v = 2) were then performed with a cryogenic current comparator resistance bridge. Relative deviation from RH (v = 2) less than 30 parts in 109 can be achieved down to 7 T of magnetic field and up to 6 K of temperature with driving current of 19. 37 μA.
Original languageEnglish
Title of host publicationPrecision Electromagnetic Measurements (CPEM 2016), 2016 Conference on
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages1 - 2
ISBN (Electronic)978-1-4673-9134-4, 978-1-4673-9132-0
ISBN (Print)978-1-4673-9135-1
DOIs
Publication statusPublished - 2016
MoE publication typeA4 Article in a conference publication
EventConference on Precision Electromagnetic Measurements, CPEM 2016 - Ottawa, Canada
Duration: 10 Jul 201615 Jul 2016

Publication series

Name
ISSN (Electronic)2160-0171

Conference

ConferenceConference on Precision Electromagnetic Measurements, CPEM 2016
Abbreviated titleCPEM 2016
CountryCanada
CityOttawa
Period10/07/1615/07/16

Fingerprint

Hall resistance
plateaus
graphene
magnetic fields
cryogenics
deviation
irradiation
heating
temperature

Keywords

  • cryogenic current comparator
  • Graphene
  • precision measurement
  • quantum Hall effect
  • resistance metrology

Cite this

Chae, D-H., Kim, W-S., Satrapinski, A., & Novikov, S. (2016). Precision measurements of quantum hall resistance plateau in doping-controlled graphene device. In Precision Electromagnetic Measurements (CPEM 2016), 2016 Conference on (pp. 1 - 2). [7540495] Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/CPEM.2016.7540495
Chae, Dong-Hun ; Kim, Wan-Seop ; Satrapinski, Alexandre ; Novikov, Sergei. / Precision measurements of quantum hall resistance plateau in doping-controlled graphene device. Precision Electromagnetic Measurements (CPEM 2016), 2016 Conference on. Institute of Electrical and Electronic Engineers IEEE, 2016. pp. 1 - 2
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Chae, D-H, Kim, W-S, Satrapinski, A & Novikov, S 2016, Precision measurements of quantum hall resistance plateau in doping-controlled graphene device. in Precision Electromagnetic Measurements (CPEM 2016), 2016 Conference on., 7540495, Institute of Electrical and Electronic Engineers IEEE, pp. 1 - 2, Conference on Precision Electromagnetic Measurements, CPEM 2016, Ottawa, Canada, 10/07/16. https://doi.org/10.1109/CPEM.2016.7540495

Precision measurements of quantum hall resistance plateau in doping-controlled graphene device. / Chae, Dong-Hun; Kim, Wan-Seop; Satrapinski, Alexandre; Novikov, Sergei.

Precision Electromagnetic Measurements (CPEM 2016), 2016 Conference on. Institute of Electrical and Electronic Engineers IEEE, 2016. p. 1 - 2 7540495.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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Chae D-H, Kim W-S, Satrapinski A, Novikov S. Precision measurements of quantum hall resistance plateau in doping-controlled graphene device. In Precision Electromagnetic Measurements (CPEM 2016), 2016 Conference on. Institute of Electrical and Electronic Engineers IEEE. 2016. p. 1 - 2. 7540495 https://doi.org/10.1109/CPEM.2016.7540495