Abstract
We report preliminary results of precision measurements of the graphene quantum Hall resistance plateau value with respect to magnetic field, temperature and applied current. Resistance value of SiC graphene Hall device was modulated by chemical doping, heating, and UV irradiation at the ambient condition. Precision measurements for Rh (filing factor v = 2) were then performed with a cryogenic current comparator resistance bridge. Relative deviation from RH (v = 2) less than 30 parts in 109 can be achieved down to 7 T of magnetic field and up to 6 K of temperature with driving current of 19. 37 μA.
| Original language | English |
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| Title of host publication | Precision Electromagnetic Measurements (CPEM 2016), 2016 Conference on |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| Pages | 1 - 2 |
| ISBN (Electronic) | 978-1-4673-9134-4, 978-1-4673-9132-0 |
| ISBN (Print) | 978-1-4673-9135-1 |
| DOIs | |
| Publication status | Published - 2016 |
| MoE publication type | A4 Article in a conference publication |
| Event | Conference on Precision Electromagnetic Measurements, CPEM 2016 - Ottawa, Canada Duration: 10 Jul 2016 → 15 Jul 2016 |
Conference
| Conference | Conference on Precision Electromagnetic Measurements, CPEM 2016 |
|---|---|
| Abbreviated title | CPEM 2016 |
| Country/Territory | Canada |
| City | Ottawa |
| Period | 10/07/16 → 15/07/16 |
Keywords
- cryogenic current comparator
- Graphene
- precision measurement
- quantum Hall effect
- resistance metrology