Precision measurements of quantum hall resistance plateau in doping-controlled graphene device

Dong-Hun Chae, Wan-Seop Kim, Alexandre Satrapinski, Sergei Novikov

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

We report preliminary results of precision measurements of the graphene quantum Hall resistance plateau value with respect to magnetic field, temperature and applied current. Resistance value of SiC graphene Hall device was modulated by chemical doping, heating, and UV irradiation at the ambient condition. Precision measurements for Rh (filing factor v = 2) were then performed with a cryogenic current comparator resistance bridge. Relative deviation from RH (v = 2) less than 30 parts in 109 can be achieved down to 7 T of magnetic field and up to 6 K of temperature with driving current of 19. 37 μA.
Original languageEnglish
Title of host publicationPrecision Electromagnetic Measurements (CPEM 2016), 2016 Conference on
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages1 - 2
ISBN (Electronic)978-1-4673-9134-4, 978-1-4673-9132-0
ISBN (Print)978-1-4673-9135-1
DOIs
Publication statusPublished - 2016
MoE publication typeA4 Article in a conference publication
EventConference on Precision Electromagnetic Measurements, CPEM 2016 - Ottawa, Canada
Duration: 10 Jul 201615 Jul 2016

Conference

ConferenceConference on Precision Electromagnetic Measurements, CPEM 2016
Abbreviated titleCPEM 2016
CountryCanada
CityOttawa
Period10/07/1615/07/16

Keywords

  • cryogenic current comparator
  • Graphene
  • precision measurement
  • quantum Hall effect
  • resistance metrology

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    Chae, D-H., Kim, W-S., Satrapinski, A., & Novikov, S. (2016). Precision measurements of quantum hall resistance plateau in doping-controlled graphene device. In Precision Electromagnetic Measurements (CPEM 2016), 2016 Conference on (pp. 1 - 2). [7540495] IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/CPEM.2016.7540495