Precision quantum Hall resistance measurement on epitaxial graphene device in low magnetic field

Alexandre Satrapinski (Corresponding Author), S. Novikov, N. Lebedeva

Research output: Contribution to journalArticleScientificpeer-review

19 Citations (Scopus)

Abstract

Precision quantum Hall resistance (QHR) measurements were performed on large-area epitaxial graphene device at temperature T = 1.5 K and at magnetic fields B from 8 T down to 2.5 T, that is much lower than typically used in precision QHR measurement. QHR was measured using cryogenic current comparator resistance bridge with relatively large biasing current I sd = 41 µA to reduce measurement uncertainty. The results showed that at B = 8 T, the relative deviation of Hall resistance from the expected quantized value h/2e 2 is within experimental uncertainty of 3.5 parts in 108 and remained below 0.35 parts per million (ppm) down to B = 3 T.
Original languageEnglish
Article number173509
Number of pages4
JournalApplied Physics Letters
Volume103
Issue number17
DOIs
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

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Hall resistance
graphene
magnetic fields
cryogenics
deviation
temperature

Keywords

  • graphene
  • carrier density
  • magnetic fields
  • ultraviolet light
  • electric measurements

Cite this

Satrapinski, Alexandre ; Novikov, S. ; Lebedeva, N. / Precision quantum Hall resistance measurement on epitaxial graphene device in low magnetic field. In: Applied Physics Letters. 2013 ; Vol. 103, No. 17.
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Precision quantum Hall resistance measurement on epitaxial graphene device in low magnetic field. / Satrapinski, Alexandre (Corresponding Author); Novikov, S.; Lebedeva, N.

In: Applied Physics Letters, Vol. 103, No. 17, 173509, 2013.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Precision quantum Hall resistance measurement on epitaxial graphene device in low magnetic field

AU - Satrapinski, Alexandre

AU - Novikov, S.

AU - Lebedeva, N.

PY - 2013

Y1 - 2013

N2 - Precision quantum Hall resistance (QHR) measurements were performed on large-area epitaxial graphene device at temperature T = 1.5 K and at magnetic fields B from 8 T down to 2.5 T, that is much lower than typically used in precision QHR measurement. QHR was measured using cryogenic current comparator resistance bridge with relatively large biasing current I sd = 41 µA to reduce measurement uncertainty. The results showed that at B = 8 T, the relative deviation of Hall resistance from the expected quantized value h/2e 2 is within experimental uncertainty of 3.5 parts in 108 and remained below 0.35 parts per million (ppm) down to B = 3 T.

AB - Precision quantum Hall resistance (QHR) measurements were performed on large-area epitaxial graphene device at temperature T = 1.5 K and at magnetic fields B from 8 T down to 2.5 T, that is much lower than typically used in precision QHR measurement. QHR was measured using cryogenic current comparator resistance bridge with relatively large biasing current I sd = 41 µA to reduce measurement uncertainty. The results showed that at B = 8 T, the relative deviation of Hall resistance from the expected quantized value h/2e 2 is within experimental uncertainty of 3.5 parts in 108 and remained below 0.35 parts per million (ppm) down to B = 3 T.

KW - graphene

KW - carrier density

KW - magnetic fields

KW - ultraviolet light

KW - electric measurements

U2 - 10.1063/1.4826641

DO - 10.1063/1.4826641

M3 - Article

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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