Precision quantum Hall resistance measurement on epitaxial graphene device in low magnetic field

Alexandre Satrapinski (Corresponding Author), S. Novikov, N. Lebedeva

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Precision quantum Hall resistance (QHR) measurements were performed on large-area epitaxial graphene device at temperature T = 1.5 K and at magnetic fields B from 8 T down to 2.5 T, that is much lower than typically used in precision QHR measurement. QHR was measured using cryogenic current comparator resistance bridge with relatively large biasing current I sd = 41 µA to reduce measurement uncertainty. The results showed that at B = 8 T, the relative deviation of Hall resistance from the expected quantized value h/2e 2 is within experimental uncertainty of 3.5 parts in 108 and remained below 0.35 parts per million (ppm) down to B = 3 T.
Original languageEnglish
Article number173509
Number of pages4
JournalApplied Physics Letters
Issue number17
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed



  • graphene
  • carrier density
  • magnetic fields
  • ultraviolet light
  • electric measurements

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