TY - JOUR
T1 - Predictable quantum efficient detector
T2 - I. Photodiodes and predicted responsivity
AU - Sildoja, Meelis
AU - Manoocheri, Farshid
AU - Merimaa, Mikko
AU - Ikonen, Erkki
AU - Müller, Ingmar
AU - Werner, Lutz
AU - Gran, Jarle
AU - Kübarsepp, Toomas
AU - Smîd, Marek
AU - Rastello, Maria Luisa
PY - 2013
Y1 - 2013
N2 - The design and construction of a predictable quantum
efficient detector (PQED), suggested to be capable of
measuring optical power with a relative uncertainty of 1
ppm (ppm = parts per million), is presented. The
structure and working principle of induced junction
silicon photodiodes are described combined with the
design of the PQED. The detector uses two custom-made
large area photodiodes assembled into a light-trapping
configuration, reducing the reflectance down to a few
tens of ppm. A liquid nitrogen cryostat is used to cool
the induced junction photodiodes to 78 K to improve the
mobility of charge carriers and to reduce the dark
current. To determine the predicted spectral
responsivity, reflectance losses of the PQED were
measured at room temperature and at 78 K and also
modelled throughout the visible wavelength range from 400
nm to 800 nm. The measured values of reflectance at room
temperature were 29.8 ppm, 22.8 ppm and 6.6 ppm at the
wavelengths of 476 nm, 488 nm and 532 nm, respectively,
whereas the calculated reflectances were about 4 ppm
higher. The reflectance at 78 K was measured at the
wavelengths of 488 nm and 532 nm over a period of 60 h
during which the reflectance changed by about 20 ppm. The
main uncertainty components in the predicted internal
quantum deficiency (IQD) of the induced junction
photodiodes are due to the reliability of the
charge-carrier recombination model and the extinction
coefficient of silicon at wavelengths longer than 700 nm.
The expanded uncertainty of the predicted IQD is 2 ppm at
78 K over a limited spectral range and below 140 ppm at
room temperature over the visible wavelength range. All
the above factors are combined as the external quantum
deficiency (EQD), which is needed for the calculation of
the predicted spectral responsivity of the PQED. The
values of the predicted EQD are below 70 ppm between the
wavelengths of 476 nm and 760 nm, and their expanded
uncertainties mostly vary between 10 ppm and 140 ppm,
where the lowest uncertainties are obtained at low
temperatures.
AB - The design and construction of a predictable quantum
efficient detector (PQED), suggested to be capable of
measuring optical power with a relative uncertainty of 1
ppm (ppm = parts per million), is presented. The
structure and working principle of induced junction
silicon photodiodes are described combined with the
design of the PQED. The detector uses two custom-made
large area photodiodes assembled into a light-trapping
configuration, reducing the reflectance down to a few
tens of ppm. A liquid nitrogen cryostat is used to cool
the induced junction photodiodes to 78 K to improve the
mobility of charge carriers and to reduce the dark
current. To determine the predicted spectral
responsivity, reflectance losses of the PQED were
measured at room temperature and at 78 K and also
modelled throughout the visible wavelength range from 400
nm to 800 nm. The measured values of reflectance at room
temperature were 29.8 ppm, 22.8 ppm and 6.6 ppm at the
wavelengths of 476 nm, 488 nm and 532 nm, respectively,
whereas the calculated reflectances were about 4 ppm
higher. The reflectance at 78 K was measured at the
wavelengths of 488 nm and 532 nm over a period of 60 h
during which the reflectance changed by about 20 ppm. The
main uncertainty components in the predicted internal
quantum deficiency (IQD) of the induced junction
photodiodes are due to the reliability of the
charge-carrier recombination model and the extinction
coefficient of silicon at wavelengths longer than 700 nm.
The expanded uncertainty of the predicted IQD is 2 ppm at
78 K over a limited spectral range and below 140 ppm at
room temperature over the visible wavelength range. All
the above factors are combined as the external quantum
deficiency (EQD), which is needed for the calculation of
the predicted spectral responsivity of the PQED. The
values of the predicted EQD are below 70 ppm between the
wavelengths of 476 nm and 760 nm, and their expanded
uncertainties mostly vary between 10 ppm and 140 ppm,
where the lowest uncertainties are obtained at low
temperatures.
U2 - 10.1088/0026-1394/50/4/385
DO - 10.1088/0026-1394/50/4/385
M3 - Article
SN - 0026-1394
VL - 50
SP - 385
EP - 394
JO - Metrologia
JF - Metrologia
IS - 4
ER -