Predictable quantum efficient detector: I. Photodiodes and predicted responsivity

Meelis Sildoja, Farshid Manoocheri, Mikko Merimaa, Erkki Ikonen, Ingmar Müller, Lutz Werner, Jarle Gran, Toomas Kübarsepp, Marek Smîd, Maria Luisa Rastello

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

The design and construction of a predictable quantum efficient detector (PQED), suggested to be capable of measuring optical power with a relative uncertainty of 1 ppm (ppm = parts per million), is presented. The structure and working principle of induced junction silicon photodiodes are described combined with the design of the PQED. The detector uses two custom-made large area photodiodes assembled into a light-trapping configuration, reducing the reflectance down to a few tens of ppm. A liquid nitrogen cryostat is used to cool the induced junction photodiodes to 78 K to improve the mobility of charge carriers and to reduce the dark current. To determine the predicted spectral responsivity, reflectance losses of the PQED were measured at room temperature and at 78 K and also modelled throughout the visible wavelength range from 400 nm to 800 nm. The measured values of reflectance at room temperature were 29.8 ppm, 22.8 ppm and 6.6 ppm at the wavelengths of 476 nm, 488 nm and 532 nm, respectively, whereas the calculated reflectances were about 4 ppm higher. The reflectance at 78 K was measured at the wavelengths of 488 nm and 532 nm over a period of 60 h during which the reflectance changed by about 20 ppm. The main uncertainty components in the predicted internal quantum deficiency (IQD) of the induced junction photodiodes are due to the reliability of the charge-carrier recombination model and the extinction coefficient of silicon at wavelengths longer than 700 nm. The expanded uncertainty of the predicted IQD is 2 ppm at 78 K over a limited spectral range and below 140 ppm at room temperature over the visible wavelength range. All the above factors are combined as the external quantum deficiency (EQD), which is needed for the calculation of the predicted spectral responsivity of the PQED. The values of the predicted EQD are below 70 ppm between the wavelengths of 476 nm and 760 nm, and their expanded uncertainties mostly vary between 10 ppm and 140 ppm, where the lowest uncertainties are obtained at low temperatures.
Original languageEnglish
Pages (from-to)385 - 394
JournalMetrologia
Volume50
Issue number4
DOIs
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

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Photodiodes
Detectors
Wavelength
Charge carriers
Silicon
Temperature
Cryostats
Dark currents
Liquid nitrogen
Uncertainty

Cite this

Sildoja, M., Manoocheri, F., Merimaa, M., Ikonen, E., Müller, I., Werner, L., ... Rastello, M. L. (2013). Predictable quantum efficient detector: I. Photodiodes and predicted responsivity. Metrologia, 50(4), 385 - 394. https://doi.org/10.1088/0026-1394/50/4/385
Sildoja, Meelis ; Manoocheri, Farshid ; Merimaa, Mikko ; Ikonen, Erkki ; Müller, Ingmar ; Werner, Lutz ; Gran, Jarle ; Kübarsepp, Toomas ; Smîd, Marek ; Rastello, Maria Luisa. / Predictable quantum efficient detector : I. Photodiodes and predicted responsivity. In: Metrologia. 2013 ; Vol. 50, No. 4. pp. 385 - 394.
@article{9e847a9632dd4621801aa8e559223410,
title = "Predictable quantum efficient detector: I. Photodiodes and predicted responsivity",
abstract = "The design and construction of a predictable quantum efficient detector (PQED), suggested to be capable of measuring optical power with a relative uncertainty of 1 ppm (ppm = parts per million), is presented. The structure and working principle of induced junction silicon photodiodes are described combined with the design of the PQED. The detector uses two custom-made large area photodiodes assembled into a light-trapping configuration, reducing the reflectance down to a few tens of ppm. A liquid nitrogen cryostat is used to cool the induced junction photodiodes to 78 K to improve the mobility of charge carriers and to reduce the dark current. To determine the predicted spectral responsivity, reflectance losses of the PQED were measured at room temperature and at 78 K and also modelled throughout the visible wavelength range from 400 nm to 800 nm. The measured values of reflectance at room temperature were 29.8 ppm, 22.8 ppm and 6.6 ppm at the wavelengths of 476 nm, 488 nm and 532 nm, respectively, whereas the calculated reflectances were about 4 ppm higher. The reflectance at 78 K was measured at the wavelengths of 488 nm and 532 nm over a period of 60 h during which the reflectance changed by about 20 ppm. The main uncertainty components in the predicted internal quantum deficiency (IQD) of the induced junction photodiodes are due to the reliability of the charge-carrier recombination model and the extinction coefficient of silicon at wavelengths longer than 700 nm. The expanded uncertainty of the predicted IQD is 2 ppm at 78 K over a limited spectral range and below 140 ppm at room temperature over the visible wavelength range. All the above factors are combined as the external quantum deficiency (EQD), which is needed for the calculation of the predicted spectral responsivity of the PQED. The values of the predicted EQD are below 70 ppm between the wavelengths of 476 nm and 760 nm, and their expanded uncertainties mostly vary between 10 ppm and 140 ppm, where the lowest uncertainties are obtained at low temperatures.",
author = "Meelis Sildoja and Farshid Manoocheri and Mikko Merimaa and Erkki Ikonen and Ingmar M{\"u}ller and Lutz Werner and Jarle Gran and Toomas K{\"u}barsepp and Marek Sm{\^i}d and Rastello, {Maria Luisa}",
year = "2013",
doi = "10.1088/0026-1394/50/4/385",
language = "English",
volume = "50",
pages = "385 -- 394",
journal = "Metrologia",
issn = "0026-1394",
publisher = "Institute of Physics IOP",
number = "4",

}

Sildoja, M, Manoocheri, F, Merimaa, M, Ikonen, E, Müller, I, Werner, L, Gran, J, Kübarsepp, T, Smîd, M & Rastello, ML 2013, 'Predictable quantum efficient detector: I. Photodiodes and predicted responsivity', Metrologia, vol. 50, no. 4, pp. 385 - 394. https://doi.org/10.1088/0026-1394/50/4/385

Predictable quantum efficient detector : I. Photodiodes and predicted responsivity. / Sildoja, Meelis; Manoocheri, Farshid; Merimaa, Mikko; Ikonen, Erkki; Müller, Ingmar; Werner, Lutz; Gran, Jarle; Kübarsepp, Toomas; Smîd, Marek; Rastello, Maria Luisa.

In: Metrologia, Vol. 50, No. 4, 2013, p. 385 - 394.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Predictable quantum efficient detector

T2 - I. Photodiodes and predicted responsivity

AU - Sildoja, Meelis

AU - Manoocheri, Farshid

AU - Merimaa, Mikko

AU - Ikonen, Erkki

AU - Müller, Ingmar

AU - Werner, Lutz

AU - Gran, Jarle

AU - Kübarsepp, Toomas

AU - Smîd, Marek

AU - Rastello, Maria Luisa

PY - 2013

Y1 - 2013

N2 - The design and construction of a predictable quantum efficient detector (PQED), suggested to be capable of measuring optical power with a relative uncertainty of 1 ppm (ppm = parts per million), is presented. The structure and working principle of induced junction silicon photodiodes are described combined with the design of the PQED. The detector uses two custom-made large area photodiodes assembled into a light-trapping configuration, reducing the reflectance down to a few tens of ppm. A liquid nitrogen cryostat is used to cool the induced junction photodiodes to 78 K to improve the mobility of charge carriers and to reduce the dark current. To determine the predicted spectral responsivity, reflectance losses of the PQED were measured at room temperature and at 78 K and also modelled throughout the visible wavelength range from 400 nm to 800 nm. The measured values of reflectance at room temperature were 29.8 ppm, 22.8 ppm and 6.6 ppm at the wavelengths of 476 nm, 488 nm and 532 nm, respectively, whereas the calculated reflectances were about 4 ppm higher. The reflectance at 78 K was measured at the wavelengths of 488 nm and 532 nm over a period of 60 h during which the reflectance changed by about 20 ppm. The main uncertainty components in the predicted internal quantum deficiency (IQD) of the induced junction photodiodes are due to the reliability of the charge-carrier recombination model and the extinction coefficient of silicon at wavelengths longer than 700 nm. The expanded uncertainty of the predicted IQD is 2 ppm at 78 K over a limited spectral range and below 140 ppm at room temperature over the visible wavelength range. All the above factors are combined as the external quantum deficiency (EQD), which is needed for the calculation of the predicted spectral responsivity of the PQED. The values of the predicted EQD are below 70 ppm between the wavelengths of 476 nm and 760 nm, and their expanded uncertainties mostly vary between 10 ppm and 140 ppm, where the lowest uncertainties are obtained at low temperatures.

AB - The design and construction of a predictable quantum efficient detector (PQED), suggested to be capable of measuring optical power with a relative uncertainty of 1 ppm (ppm = parts per million), is presented. The structure and working principle of induced junction silicon photodiodes are described combined with the design of the PQED. The detector uses two custom-made large area photodiodes assembled into a light-trapping configuration, reducing the reflectance down to a few tens of ppm. A liquid nitrogen cryostat is used to cool the induced junction photodiodes to 78 K to improve the mobility of charge carriers and to reduce the dark current. To determine the predicted spectral responsivity, reflectance losses of the PQED were measured at room temperature and at 78 K and also modelled throughout the visible wavelength range from 400 nm to 800 nm. The measured values of reflectance at room temperature were 29.8 ppm, 22.8 ppm and 6.6 ppm at the wavelengths of 476 nm, 488 nm and 532 nm, respectively, whereas the calculated reflectances were about 4 ppm higher. The reflectance at 78 K was measured at the wavelengths of 488 nm and 532 nm over a period of 60 h during which the reflectance changed by about 20 ppm. The main uncertainty components in the predicted internal quantum deficiency (IQD) of the induced junction photodiodes are due to the reliability of the charge-carrier recombination model and the extinction coefficient of silicon at wavelengths longer than 700 nm. The expanded uncertainty of the predicted IQD is 2 ppm at 78 K over a limited spectral range and below 140 ppm at room temperature over the visible wavelength range. All the above factors are combined as the external quantum deficiency (EQD), which is needed for the calculation of the predicted spectral responsivity of the PQED. The values of the predicted EQD are below 70 ppm between the wavelengths of 476 nm and 760 nm, and their expanded uncertainties mostly vary between 10 ppm and 140 ppm, where the lowest uncertainties are obtained at low temperatures.

U2 - 10.1088/0026-1394/50/4/385

DO - 10.1088/0026-1394/50/4/385

M3 - Article

VL - 50

SP - 385

EP - 394

JO - Metrologia

JF - Metrologia

SN - 0026-1394

IS - 4

ER -