Preparation of lead sulfide thin films by the atomic layer epitaxy process

Markku Leskelä, Lauri Niinistö, Pentti Niemelä, Erja Nykänen, Pekka Soininen, Marja Tiitta, Jouko Vähäkangas

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Abstract

Preparation of lead sulfide thin films on different substrates by the Atomic Layer Epitaxy process has been studied. Sulfur source was in all experiments H2S, but as lead source the following compounds were tested: bromide, iodide and acetate as well as thd (2,2,6,6-tetramethyl-3,5-heptanedione) and diethyldithiocarbamate chelates. The last complex gave the highest growth rate. The growth experiments were carried out at 300–350°C and the film thickness varied between 0.1 and 1 μm. The films were characterized by XRD, XRF, SEM, and by photoconductivity and Hall measurements.
The results showed that the films were polycrystalline and randomly oriented. The conductivity was p-type and the carrier concentration and mobility were comparable with those found in films deposited by traditional chemical methods.
Original languageEnglish
Pages (from-to)1457-1459
JournalVacuum
Volume41
Issue number4-6
DOIs
Publication statusPublished - 1990
MoE publication typeA1 Journal article-refereed

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    Leskelä, M., Niinistö, L., Niemelä, P., Nykänen, E., Soininen, P., Tiitta, M., & Vähäkangas, J. (1990). Preparation of lead sulfide thin films by the atomic layer epitaxy process. Vacuum, 41(4-6), 1457-1459. https://doi.org/10.1016/0042-207X(90)93989-V