Preparation of lead sulfide thin films by the atomic layer epitaxy process

Markku Leskelä; Lauri Niinistö; Pentti Niemelä; Erja Nykänen; Pekka Soininen; Marja Tiitta; Jouko Vähäkangas

doi:10.1016/0042-207X(90)93989-V

Preparation of lead sulfide thin films by the atomic layer epitaxy process

Markku Leskelä, Lauri Niinistö, Pentti Niemelä, Erja Nykänen, Pekka Soininen, Marja Tiitta, Jouko Vähäkangas

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

Preparation of lead sulfide thin films on different substrates by the Atomic Layer Epitaxy process has been studied. Sulfur source was in all experiments H2S, but as lead source the following compounds were tested: bromide, iodide and acetate as well as thd (2,2,6,6-tetramethyl-3,5-heptanedione) and diethyldithiocarbamate chelates. The last complex gave the highest growth rate. The growth experiments were carried out at 300–350°C and the film thickness varied between 0.1 and 1 μm. The films were characterized by XRD, XRF, SEM, and by photoconductivity and Hall measurements. The results showed that the films were polycrystalline and randomly oriented. The conductivity was p-type and the carrier concentration and mobility were comparable with those found in films deposited by traditional chemical methods.

Original language	English
Pages (from-to)	1457-1459
Journal	Vacuum
Volume	41
Issue number	4-6
DOIs	https://doi.org/10.1016/0042-207X(90)93989-V
Publication status	Published - 1990
MoE publication type	A1 Journal article-refereed

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title = "Preparation of lead sulfide thin films by the atomic layer epitaxy process",

abstract = "Preparation of lead sulfide thin films on different substrates by the Atomic Layer Epitaxy process has been studied. Sulfur source was in all experiments H2S, but as lead source the following compounds were tested: bromide, iodide and acetate as well as thd (2,2,6,6-tetramethyl-3,5-heptanedione) and diethyldithiocarbamate chelates. The last complex gave the highest growth rate. The growth experiments were carried out at 300–350°C and the film thickness varied between 0.1 and 1 μm. The films were characterized by XRD, XRF, SEM, and by photoconductivity and Hall measurements. The results showed that the films were polycrystalline and randomly oriented. The conductivity was p-type and the carrier concentration and mobility were comparable with those found in films deposited by traditional chemical methods.",

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year = "1990",

doi = "10.1016/0042-207X(90)93989-V",

language = "English",

volume = "41",

pages = "1457--1459",

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issn = "0042-207X",

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TY - JOUR

T1 - Preparation of lead sulfide thin films by the atomic layer epitaxy process

AU - Leskelä, Markku

AU - Niinistö, Lauri

AU - Niemelä, Pentti

AU - Nykänen, Erja

AU - Soininen, Pekka

AU - Tiitta, Marja

AU - Vähäkangas, Jouko

PY - 1990

Y1 - 1990

N2 - Preparation of lead sulfide thin films on different substrates by the Atomic Layer Epitaxy process has been studied. Sulfur source was in all experiments H2S, but as lead source the following compounds were tested: bromide, iodide and acetate as well as thd (2,2,6,6-tetramethyl-3,5-heptanedione) and diethyldithiocarbamate chelates. The last complex gave the highest growth rate. The growth experiments were carried out at 300–350°C and the film thickness varied between 0.1 and 1 μm. The films were characterized by XRD, XRF, SEM, and by photoconductivity and Hall measurements. The results showed that the films were polycrystalline and randomly oriented. The conductivity was p-type and the carrier concentration and mobility were comparable with those found in films deposited by traditional chemical methods.

AB - Preparation of lead sulfide thin films on different substrates by the Atomic Layer Epitaxy process has been studied. Sulfur source was in all experiments H2S, but as lead source the following compounds were tested: bromide, iodide and acetate as well as thd (2,2,6,6-tetramethyl-3,5-heptanedione) and diethyldithiocarbamate chelates. The last complex gave the highest growth rate. The growth experiments were carried out at 300–350°C and the film thickness varied between 0.1 and 1 μm. The films were characterized by XRD, XRF, SEM, and by photoconductivity and Hall measurements. The results showed that the films were polycrystalline and randomly oriented. The conductivity was p-type and the carrier concentration and mobility were comparable with those found in films deposited by traditional chemical methods.

U2 - 10.1016/0042-207X(90)93989-V

DO - 10.1016/0042-207X(90)93989-V

M3 - Article

SN - 0042-207X

VL - 41

SP - 1457

EP - 1459

JO - Vacuum

JF - Vacuum

IS - 4-6

ER -

Preparation of lead sulfide thin films by the atomic layer epitaxy process

Abstract

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