Pressure-dependent operation in play (3-alkylthiophene) field-effect transistors and Schottky diodes

Markus Ahlskog, Jari Paloheimo, Henrik Stubb, Azar Assadi

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)

Abstract

We have studied charge transport in thin film of poly(3-alkylthiophenes) by measuring polymeric field-effect transistors and Schottky diodes under hydrostatic pressure. The field-effect mobility and conductivity were found to increase with increasing pressure below 2 kbar saturating above 2 kbar to a value of about 1.5–2.0 times the ambient pressure value. A roughly similar increase in the forward biased diode current was observed. The estimated compressibilities are in reasonable agreement with the results of other recent studies.
Original languageEnglish
Pages (from-to)77-80
Number of pages4
JournalSynthetic Metals
Volume65
Issue number1
DOIs
Publication statusPublished - 1994
MoE publication typeA1 Journal article-refereed

Fingerprint

Field effect transistors
Schottky diodes
Diodes
field effect transistors
diodes
Hydrostatic pressure
Compressibility
hydrostatic pressure
compressibility
Charge transfer
Thin films
conductivity
thin films

Cite this

Ahlskog, Markus ; Paloheimo, Jari ; Stubb, Henrik ; Assadi, Azar. / Pressure-dependent operation in play (3-alkylthiophene) field-effect transistors and Schottky diodes. In: Synthetic Metals. 1994 ; Vol. 65, No. 1. pp. 77-80.
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Pressure-dependent operation in play (3-alkylthiophene) field-effect transistors and Schottky diodes. / Ahlskog, Markus; Paloheimo, Jari; Stubb, Henrik; Assadi, Azar.

In: Synthetic Metals, Vol. 65, No. 1, 1994, p. 77-80.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Pressure-dependent operation in play (3-alkylthiophene) field-effect transistors and Schottky diodes

AU - Ahlskog, Markus

AU - Paloheimo, Jari

AU - Stubb, Henrik

AU - Assadi, Azar

N1 - Project code: PUO3018

PY - 1994

Y1 - 1994

N2 - We have studied charge transport in thin film of poly(3-alkylthiophenes) by measuring polymeric field-effect transistors and Schottky diodes under hydrostatic pressure. The field-effect mobility and conductivity were found to increase with increasing pressure below 2 kbar saturating above 2 kbar to a value of about 1.5–2.0 times the ambient pressure value. A roughly similar increase in the forward biased diode current was observed. The estimated compressibilities are in reasonable agreement with the results of other recent studies.

AB - We have studied charge transport in thin film of poly(3-alkylthiophenes) by measuring polymeric field-effect transistors and Schottky diodes under hydrostatic pressure. The field-effect mobility and conductivity were found to increase with increasing pressure below 2 kbar saturating above 2 kbar to a value of about 1.5–2.0 times the ambient pressure value. A roughly similar increase in the forward biased diode current was observed. The estimated compressibilities are in reasonable agreement with the results of other recent studies.

U2 - 10.1016/0379-6779(94)90296-8

DO - 10.1016/0379-6779(94)90296-8

M3 - Article

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SP - 77

EP - 80

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

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