We have studied charge transport in thin film of poly(3-alkylthiophenes) by measuring polymeric field-effect transistors and Schottky diodes under hydrostatic pressure. The field-effect mobility and conductivity were found to increase with increasing pressure below 2 kbar saturating above 2 kbar to a value of about 1.5–2.0 times the ambient pressure value. A roughly similar increase in the forward biased diode current was observed. The estimated compressibilities are in reasonable agreement with the results of other recent studies.
Ahlskog, M., Paloheimo, J., Stubb, H., & Assadi, A. (1994). Pressure-dependent operation in play (3-alkylthiophene) field-effect transistors and Schottky diodes. Synthetic Metals, 65(1), 77-80. https://doi.org/10.1016/0379-6779(94)90296-8