Pressure-dependent operation in play (3-alkylthiophene) field-effect transistors and Schottky diodes

Markus Ahlskog, Jari Paloheimo, Henrik Stubb, Azar Assadi

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)

Abstract

We have studied charge transport in thin film of poly(3-alkylthiophenes) by measuring polymeric field-effect transistors and Schottky diodes under hydrostatic pressure. The field-effect mobility and conductivity were found to increase with increasing pressure below 2 kbar saturating above 2 kbar to a value of about 1.5–2.0 times the ambient pressure value. A roughly similar increase in the forward biased diode current was observed. The estimated compressibilities are in reasonable agreement with the results of other recent studies.
Original languageEnglish
Pages (from-to)77-80
Number of pages4
JournalSynthetic Metals
Volume65
Issue number1
DOIs
Publication statusPublished - 1994
MoE publication typeA1 Journal article-refereed

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