Pressure-dependent operation in play (3-alkylthiophene) field-effect transistors and Schottky diodes

Markus Ahlskog; Jari Paloheimo; Henrik Stubb; Azar Assadi

doi:10.1016/0379-6779(94)90296-8

Pressure-dependent operation in play (3-alkylthiophene) field-effect transistors and Schottky diodes

Markus Ahlskog, Jari Paloheimo, Henrik Stubb, Azar Assadi

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

We have studied charge transport in thin film of poly(3-alkylthiophenes) by measuring polymeric field-effect transistors and Schottky diodes under hydrostatic pressure. The field-effect mobility and conductivity were found to increase with increasing pressure below 2 kbar saturating above 2 kbar to a value of about 1.5–2.0 times the ambient pressure value. A roughly similar increase in the forward biased diode current was observed. The estimated compressibilities are in reasonable agreement with the results of other recent studies.

Original language	English
Pages (from-to)	77-80
Journal	Synthetic Metals
Volume	65
Issue number	1
DOIs	https://doi.org/10.1016/0379-6779(94)90296-8
Publication status	Published - 1994
MoE publication type	A1 Journal article-refereed

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title = "Pressure-dependent operation in play (3-alkylthiophene) field-effect transistors and Schottky diodes",

abstract = "We have studied charge transport in thin film of poly(3-alkylthiophenes) by measuring polymeric field-effect transistors and Schottky diodes under hydrostatic pressure. The field-effect mobility and conductivity were found to increase with increasing pressure below 2 kbar saturating above 2 kbar to a value of about 1.5–2.0 times the ambient pressure value. A roughly similar increase in the forward biased diode current was observed. The estimated compressibilities are in reasonable agreement with the results of other recent studies.",

author = "Markus Ahlskog and Jari Paloheimo and Henrik Stubb and Azar Assadi",

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AU - Stubb, Henrik

AU - Assadi, Azar

N1 - Project code: PUO3018

PY - 1994

Y1 - 1994

N2 - We have studied charge transport in thin film of poly(3-alkylthiophenes) by measuring polymeric field-effect transistors and Schottky diodes under hydrostatic pressure. The field-effect mobility and conductivity were found to increase with increasing pressure below 2 kbar saturating above 2 kbar to a value of about 1.5–2.0 times the ambient pressure value. A roughly similar increase in the forward biased diode current was observed. The estimated compressibilities are in reasonable agreement with the results of other recent studies.

AB - We have studied charge transport in thin film of poly(3-alkylthiophenes) by measuring polymeric field-effect transistors and Schottky diodes under hydrostatic pressure. The field-effect mobility and conductivity were found to increase with increasing pressure below 2 kbar saturating above 2 kbar to a value of about 1.5–2.0 times the ambient pressure value. A roughly similar increase in the forward biased diode current was observed. The estimated compressibilities are in reasonable agreement with the results of other recent studies.

U2 - 10.1016/0379-6779(94)90296-8

DO - 10.1016/0379-6779(94)90296-8

M3 - Article

SN - 0379-6779

VL - 65

SP - 77

EP - 80

JO - Synthetic Metals

JF - Synthetic Metals

IS - 1

ER -

Pressure-dependent operation in play (3-alkylthiophene) field-effect transistors and Schottky diodes

Abstract

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