Abstract
This paper reports on the current status of the printed memory development in the PriMeBits EU FP7/ICT project (2008-2010).
The two memory technologies under development are: (1) resistive write-once-read-many memory (WORM) based on rapid electrical sintering (RES) of silver nanoparticle structures, and (2) ferroelectric read-and-write memory (FRAM) based on BaTiO3 composite.
Application scenarios and demonstrator activities are described.
The two memory technologies under development are: (1) resistive write-once-read-many memory (WORM) based on rapid electrical sintering (RES) of silver nanoparticle structures, and (2) ferroelectric read-and-write memory (FRAM) based on BaTiO3 composite.
Application scenarios and demonstrator activities are described.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of LOPE-C 2010 |
| Subtitle of host publication | International Conference and Exhibition for the Organic and Printed Electronics Industry, LOPE-C, Large-Area, Organic & Printed Electronics Convention |
| Pages | 8-12 |
| Publication status | Published - 2010 |
| MoE publication type | A4 Article in a conference publication |
| Event | International Conference and Exhibition for the Organic and Printed Electronics Industry, Large-Area, Organic & Printed Electronics Convention, LOPE-C 2010 - Frankfurt am Main, Germany Duration: 31 May 2010 → 2 Jun 2010 |
Conference
| Conference | International Conference and Exhibition for the Organic and Printed Electronics Industry, Large-Area, Organic & Printed Electronics Convention, LOPE-C 2010 |
|---|---|
| Abbreviated title | LOPE-C 2010 |
| Country/Territory | Germany |
| City | Frankfurt am Main |
| Period | 31/05/10 → 2/06/10 |
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