Printed all-polymer electrochemical transistors on patterned ion conducting membranes

Nikolai Kaihovirta; Tapio Mäkelä; Xuehan He; Carl-Johan Wikman; Carl-Erik Wilén; Ronald Österbacka

doi:10.1016/j.orgel.2010.04.025

Printed all-polymer electrochemical transistors on patterned ion conducting membranes

Nikolai Kaihovirta (Corresponding Author), Tapio Mäkelä, Xuehan He, Carl-Johan Wikman, Carl-Erik Wilén, Ronald Österbacka

Åbo Akademi University

Research output: Contribution to journal › Article › Scientific › peer-review

27 Citations (Scopus)

Abstract

We report a simple and roll-to-roll suitable method of manufacturing low-voltage, all-polymer electrochemical transistors (ECTs). The ECTs are built on self-supported and patterned ion conducting membranes that are tailor-made by the electron beam irradiation induced grafting technique. The redox-active poly(3,4-ethylene dioxythiophene)/poly(styrene sulfonate) (PEDOT/PSS) is then printed by flexography onto the membrane in one fabrication step. The ECTs are “normally-on” devices that operate below 2 V. We also utilize overoxidation of PEDOT in order to demonstrate write-once read many times (WORM) memory functionality in the ECT.

Original language	English
Pages (from-to)	1207-1211
Number of pages	5
Journal	Organic Electronics
Volume	11
Issue number	7
DOIs	https://doi.org/10.1016/j.orgel.2010.04.025
Publication status	Published - 2010
MoE publication type	A1 Journal article-refereed

Keywords

Electrochemical transistor
organic transistor
all-polymer
PEDOT/PSS
roll-to-roll
WORM

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10.1016/j.orgel.2010.04.025

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title = "Printed all-polymer electrochemical transistors on patterned ion conducting membranes",

abstract = "We report a simple and roll-to-roll suitable method of manufacturing low-voltage, all-polymer electrochemical transistors (ECTs). The ECTs are built on self-supported and patterned ion conducting membranes that are tailor-made by the electron beam irradiation induced grafting technique. The redox-active poly(3,4-ethylene dioxythiophene)/poly(styrene sulfonate) (PEDOT/PSS) is then printed by flexography onto the membrane in one fabrication step. The ECTs are “normally-on” devices that operate below 2 V. We also utilize overoxidation of PEDOT in order to demonstrate write-once read many times (WORM) memory functionality in the ECT.",

keywords = "Electrochemical transistor, organic transistor, all-polymer, PEDOT/PSS, roll-to-roll, WORM",

author = "Nikolai Kaihovirta and Tapio M{\"a}kel{\"a} and Xuehan He and Carl-Johan Wikman and Carl-Erik Wil{\'e}n and Ronald {\"O}sterbacka",

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doi = "10.1016/j.orgel.2010.04.025",

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T1 - Printed all-polymer electrochemical transistors on patterned ion conducting membranes

AU - Kaihovirta, Nikolai

AU - Mäkelä, Tapio

AU - He, Xuehan

AU - Wikman, Carl-Johan

AU - Wilén, Carl-Erik

AU - Österbacka, Ronald

PY - 2010

Y1 - 2010

N2 - We report a simple and roll-to-roll suitable method of manufacturing low-voltage, all-polymer electrochemical transistors (ECTs). The ECTs are built on self-supported and patterned ion conducting membranes that are tailor-made by the electron beam irradiation induced grafting technique. The redox-active poly(3,4-ethylene dioxythiophene)/poly(styrene sulfonate) (PEDOT/PSS) is then printed by flexography onto the membrane in one fabrication step. The ECTs are “normally-on” devices that operate below 2 V. We also utilize overoxidation of PEDOT in order to demonstrate write-once read many times (WORM) memory functionality in the ECT.

AB - We report a simple and roll-to-roll suitable method of manufacturing low-voltage, all-polymer electrochemical transistors (ECTs). The ECTs are built on self-supported and patterned ion conducting membranes that are tailor-made by the electron beam irradiation induced grafting technique. The redox-active poly(3,4-ethylene dioxythiophene)/poly(styrene sulfonate) (PEDOT/PSS) is then printed by flexography onto the membrane in one fabrication step. The ECTs are “normally-on” devices that operate below 2 V. We also utilize overoxidation of PEDOT in order to demonstrate write-once read many times (WORM) memory functionality in the ECT.

KW - Electrochemical transistor

KW - organic transistor

KW - all-polymer

KW - PEDOT/PSS

KW - roll-to-roll

KW - WORM

U2 - 10.1016/j.orgel.2010.04.025

DO - 10.1016/j.orgel.2010.04.025

M3 - Article

SN - 1566-1199

VL - 11

SP - 1207

EP - 1211

JO - Organic Electronics

JF - Organic Electronics

IS - 7

ER -

Printed all-polymer electrochemical transistors on patterned ion conducting membranes

Abstract

Keywords

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