Printed, Highly Stable Metal Oxide Thin-Film Transistors with Ultra-Thin High-κ Oxide Dielectric

Emanuel Carlos, Jaakko Leppäniemi (Corresponding Author), Asko Sneck, Ari Alastalo, Jonas Deuermeier, Rita Branquinho, Rodrigo Martins, Elvira Fortunato

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Lately, printed oxide electronics have advanced in the performance and low-temperature solution processability that are required for the dawn of low-cost flexible applications. However, some of the remaining limitations need to be surpassed without compromising the device electronic performance and operational stability. The printing of a highly stable ultra-thin high-κ aluminum-oxide dielectric with a high-throughput (50 m min−1) flexographic printing is accomplished while simultaneously demonstrating low-temperature processing (≤200 °C). Thermal annealing is combined with low-wavelength far-ultraviolet exposure and the electrical, chemical, and morphological properties of the printed dielectric films are studied. The high-κ dielectric exhibits a very low leakage-current density (10−10 A cm−2) at 1 MV cm−1, a breakdown field higher than 1.75 MV cm−1, and a dielectric constant of 8.2 (at 1 Hz frequency). Printed indium oxide transistors are fabricated using the optimized dielectric and they achieve a mobility up to 2.83 ± 0.59 cm2 V−1 s−1, a subthreshold slope <80 mV dec−1, and a current ON/OFF ratio >106. The flexible devices reveal enhanced operational stability with a negligible shift in the electrical parameters after ageing, bias, and bending stresses. The present work lifts printed oxide thin film transistors a step closer to the flexible applications of future electronics.

Original languageEnglish
Article number1901071
JournalAdvanced Electronic Materials
DOIs
Publication statusAccepted/In press - 1 Jan 2020
MoE publication typeA1 Journal article-refereed

Fingerprint

Thin film transistors
Oxides
Oxide films
Metals
Printing
Electronic equipment
Dielectric films
Aluminum Oxide
Leakage currents
Indium
Transistors
Permittivity
Current density
Aging of materials
Throughput
Annealing
Aluminum
Wavelength
Temperature
Processing

Keywords

  • flexographic printing
  • high-κ oxide dielectrics
  • inkjet printing
  • oxide thin-film transistors
  • roll-to-roll compatibility

Cite this

@article{e345edfa24404f7db74612d783c6f09d,
title = "Printed, Highly Stable Metal Oxide Thin-Film Transistors with Ultra-Thin High-κ Oxide Dielectric",
abstract = "Lately, printed oxide electronics have advanced in the performance and low-temperature solution processability that are required for the dawn of low-cost flexible applications. However, some of the remaining limitations need to be surpassed without compromising the device electronic performance and operational stability. The printing of a highly stable ultra-thin high-κ aluminum-oxide dielectric with a high-throughput (50 m min−1) flexographic printing is accomplished while simultaneously demonstrating low-temperature processing (≤200 °C). Thermal annealing is combined with low-wavelength far-ultraviolet exposure and the electrical, chemical, and morphological properties of the printed dielectric films are studied. The high-κ dielectric exhibits a very low leakage-current density (10−10 A cm−2) at 1 MV cm−1, a breakdown field higher than 1.75 MV cm−1, and a dielectric constant of 8.2 (at 1 Hz frequency). Printed indium oxide transistors are fabricated using the optimized dielectric and they achieve a mobility up to 2.83 ± 0.59 cm2 V−1 s−1, a subthreshold slope <80 mV dec−1, and a current ON/OFF ratio >106. The flexible devices reveal enhanced operational stability with a negligible shift in the electrical parameters after ageing, bias, and bending stresses. The present work lifts printed oxide thin film transistors a step closer to the flexible applications of future electronics.",
keywords = "flexographic printing, high-κ oxide dielectrics, inkjet printing, oxide thin-film transistors, roll-to-roll compatibility",
author = "Emanuel Carlos and Jaakko Lepp{\"a}niemi and Asko Sneck and Ari Alastalo and Jonas Deuermeier and Rita Branquinho and Rodrigo Martins and Elvira Fortunato",
year = "2020",
month = "1",
day = "1",
doi = "10.1002/aelm.201901071",
language = "English",
journal = "Advanced Electronic Materials",
issn = "2199-160X",
publisher = "Wiley-VCH Verlag",

}

Printed, Highly Stable Metal Oxide Thin-Film Transistors with Ultra-Thin High-κ Oxide Dielectric. / Carlos, Emanuel; Leppäniemi, Jaakko (Corresponding Author); Sneck, Asko; Alastalo, Ari; Deuermeier, Jonas; Branquinho, Rita; Martins, Rodrigo; Fortunato, Elvira.

In: Advanced Electronic Materials, 01.01.2020.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Printed, Highly Stable Metal Oxide Thin-Film Transistors with Ultra-Thin High-κ Oxide Dielectric

AU - Carlos, Emanuel

AU - Leppäniemi, Jaakko

AU - Sneck, Asko

AU - Alastalo, Ari

AU - Deuermeier, Jonas

AU - Branquinho, Rita

AU - Martins, Rodrigo

AU - Fortunato, Elvira

PY - 2020/1/1

Y1 - 2020/1/1

N2 - Lately, printed oxide electronics have advanced in the performance and low-temperature solution processability that are required for the dawn of low-cost flexible applications. However, some of the remaining limitations need to be surpassed without compromising the device electronic performance and operational stability. The printing of a highly stable ultra-thin high-κ aluminum-oxide dielectric with a high-throughput (50 m min−1) flexographic printing is accomplished while simultaneously demonstrating low-temperature processing (≤200 °C). Thermal annealing is combined with low-wavelength far-ultraviolet exposure and the electrical, chemical, and morphological properties of the printed dielectric films are studied. The high-κ dielectric exhibits a very low leakage-current density (10−10 A cm−2) at 1 MV cm−1, a breakdown field higher than 1.75 MV cm−1, and a dielectric constant of 8.2 (at 1 Hz frequency). Printed indium oxide transistors are fabricated using the optimized dielectric and they achieve a mobility up to 2.83 ± 0.59 cm2 V−1 s−1, a subthreshold slope <80 mV dec−1, and a current ON/OFF ratio >106. The flexible devices reveal enhanced operational stability with a negligible shift in the electrical parameters after ageing, bias, and bending stresses. The present work lifts printed oxide thin film transistors a step closer to the flexible applications of future electronics.

AB - Lately, printed oxide electronics have advanced in the performance and low-temperature solution processability that are required for the dawn of low-cost flexible applications. However, some of the remaining limitations need to be surpassed without compromising the device electronic performance and operational stability. The printing of a highly stable ultra-thin high-κ aluminum-oxide dielectric with a high-throughput (50 m min−1) flexographic printing is accomplished while simultaneously demonstrating low-temperature processing (≤200 °C). Thermal annealing is combined with low-wavelength far-ultraviolet exposure and the electrical, chemical, and morphological properties of the printed dielectric films are studied. The high-κ dielectric exhibits a very low leakage-current density (10−10 A cm−2) at 1 MV cm−1, a breakdown field higher than 1.75 MV cm−1, and a dielectric constant of 8.2 (at 1 Hz frequency). Printed indium oxide transistors are fabricated using the optimized dielectric and they achieve a mobility up to 2.83 ± 0.59 cm2 V−1 s−1, a subthreshold slope <80 mV dec−1, and a current ON/OFF ratio >106. The flexible devices reveal enhanced operational stability with a negligible shift in the electrical parameters after ageing, bias, and bending stresses. The present work lifts printed oxide thin film transistors a step closer to the flexible applications of future electronics.

KW - flexographic printing

KW - high-κ oxide dielectrics

KW - inkjet printing

KW - oxide thin-film transistors

KW - roll-to-roll compatibility

UR - http://www.scopus.com/inward/record.url?scp=85078661524&partnerID=8YFLogxK

U2 - 10.1002/aelm.201901071

DO - 10.1002/aelm.201901071

M3 - Article

AN - SCOPUS:85078661524

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

SN - 2199-160X

M1 - 1901071

ER -