Printed low-voltage fuse memory on paper

J. Leppaniemi; T. Mattila; K. Eiroma; T. Miyakawa; K. Murata; A. Alastalo

doi:10.1109/LED.2014.2300413

Printed low-voltage fuse memory on paper

J. Leppaniemi, T. Mattila, K. Eiroma, T. Miyakawa, K. Murata, A. Alastalo

Research output: Contribution to journal › Article › Scientific › peer-review

9 Citations (Scopus)

Abstract

A printed lateral resistive fuse-type write-once-read-many (WORM) memory on paper substrate is demonstrated. The memory writing process is based on breaking of a silver nanoparticle conductor. Low-voltage and low-current writability demonstrated with printed batteries are enabled by a ?m2-range cross-sectional bit area that are achieved by super-fine inkjet technology. Supported by the statistical distribution of the writing times, the bit writing process is attributed to electromigration of silver and the required current density for fusing is found to be 34 mA/?m2. The results show an improvement in memory retention time when compared with structurally similar printed antifuse-type WORM memories

Original language	English
Pages (from-to)	354-356
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	3
DOIs	https://doi.org/10.1109/LED.2014.2300413
Publication status	Published - 2014
MoE publication type	A1 Journal article-refereed

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10.1109/LED.2014.2300413

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title = "Printed low-voltage fuse memory on paper",

abstract = "A printed lateral resistive fuse-type write-once-read-many (WORM) memory on paper substrate is demonstrated. The memory writing process is based on breaking of a silver nanoparticle conductor. Low-voltage and low-current writability demonstrated with printed batteries are enabled by a ?m2-range cross-sectional bit area that are achieved by super-fine inkjet technology. Supported by the statistical distribution of the writing times, the bit writing process is attributed to electromigration of silver and the required current density for fusing is found to be 34 mA/?m2. The results show an improvement in memory retention time when compared with structurally similar printed antifuse-type WORM memories",

author = "J. Leppaniemi and T. Mattila and K. Eiroma and T. Miyakawa and K. Murata and A. Alastalo",

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T1 - Printed low-voltage fuse memory on paper

AU - Leppaniemi, J.

AU - Mattila, T.

AU - Eiroma, K.

AU - Miyakawa, T.

AU - Murata, K.

AU - Alastalo, A.

N1 - Project code: 73696

PY - 2014

Y1 - 2014

N2 - A printed lateral resistive fuse-type write-once-read-many (WORM) memory on paper substrate is demonstrated. The memory writing process is based on breaking of a silver nanoparticle conductor. Low-voltage and low-current writability demonstrated with printed batteries are enabled by a ?m2-range cross-sectional bit area that are achieved by super-fine inkjet technology. Supported by the statistical distribution of the writing times, the bit writing process is attributed to electromigration of silver and the required current density for fusing is found to be 34 mA/?m2. The results show an improvement in memory retention time when compared with structurally similar printed antifuse-type WORM memories

AB - A printed lateral resistive fuse-type write-once-read-many (WORM) memory on paper substrate is demonstrated. The memory writing process is based on breaking of a silver nanoparticle conductor. Low-voltage and low-current writability demonstrated with printed batteries are enabled by a ?m2-range cross-sectional bit area that are achieved by super-fine inkjet technology. Supported by the statistical distribution of the writing times, the bit writing process is attributed to electromigration of silver and the required current density for fusing is found to be 34 mA/?m2. The results show an improvement in memory retention time when compared with structurally similar printed antifuse-type WORM memories

U2 - 10.1109/LED.2014.2300413

DO - 10.1109/LED.2014.2300413

M3 - Article

VL - 35

SP - 354

EP - 356

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 3

ER -