Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 354-356 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 35 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2014 |
| MoE publication type | A1 Journal article-refereed |
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Printed low-voltage fuse memory on paper. / Leppaniemi, J.; Mattila, T.; Eiroma, K.; Miyakawa, T.; Murata, K.; Alastalo, A.
In: IEEE Electron Device Letters, Vol. 35, No. 3, 2014, p. 354-356.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Printed low-voltage fuse memory on paper
AU - Leppaniemi, J.
AU - Mattila, T.
AU - Eiroma, K.
AU - Miyakawa, T.
AU - Murata, K.
AU - Alastalo, A.
N1 - Project code: 73696
PY - 2014
Y1 - 2014
N2 - A printed lateral resistive fuse-type write-once-read-many (WORM) memory on paper substrate is demonstrated. The memory writing process is based on breaking of a silver nanoparticle conductor. Low-voltage and low-current writability demonstrated with printed batteries are enabled by a ?m2-range cross-sectional bit area that are achieved by super-fine inkjet technology. Supported by the statistical distribution of the writing times, the bit writing process is attributed to electromigration of silver and the required current density for fusing is found to be 34 mA/?m2. The results show an improvement in memory retention time when compared with structurally similar printed antifuse-type WORM memories
AB - A printed lateral resistive fuse-type write-once-read-many (WORM) memory on paper substrate is demonstrated. The memory writing process is based on breaking of a silver nanoparticle conductor. Low-voltage and low-current writability demonstrated with printed batteries are enabled by a ?m2-range cross-sectional bit area that are achieved by super-fine inkjet technology. Supported by the statistical distribution of the writing times, the bit writing process is attributed to electromigration of silver and the required current density for fusing is found to be 34 mA/?m2. The results show an improvement in memory retention time when compared with structurally similar printed antifuse-type WORM memories
U2 - 10.1109/LED.2014.2300413
DO - 10.1109/LED.2014.2300413
M3 - Article
VL - 35
SP - 354
EP - 356
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 3
ER -