Abstract
A printed lateral resistive fuse-type
write-once-read-many (WORM) memory on paper substrate is
demonstrated. The memory writing process is based on
breaking of a silver nanoparticle conductor. Low-voltage
and low-current writability demonstrated with printed
batteries are enabled by a ?m2-range cross-sectional bit
area that are achieved by super-fine inkjet technology.
Supported by the statistical distribution of the writing
times, the bit writing process is attributed to
electromigration of silver and the required current
density for fusing is found to be 34 mA/?m2. The results
show an improvement in memory retention time when
compared with structurally similar printed antifuse-type
WORM memories
Original language | English |
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Pages (from-to) | 354-356 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 35 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2014 |
MoE publication type | A1 Journal article-refereed |