Printed low-voltage fuse memory on paper

J. Leppaniemi, T. Mattila, K. Eiroma, T. Miyakawa, K. Murata, A. Alastalo

    Research output: Contribution to journalArticleScientificpeer-review

    9 Citations (Scopus)

    Abstract

    A printed lateral resistive fuse-type write-once-read-many (WORM) memory on paper substrate is demonstrated. The memory writing process is based on breaking of a silver nanoparticle conductor. Low-voltage and low-current writability demonstrated with printed batteries are enabled by a ?m2-range cross-sectional bit area that are achieved by super-fine inkjet technology. Supported by the statistical distribution of the writing times, the bit writing process is attributed to electromigration of silver and the required current density for fusing is found to be 34 mA/?m2. The results show an improvement in memory retention time when compared with structurally similar printed antifuse-type WORM memories
    Original languageEnglish
    Pages (from-to)354-356
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume35
    Issue number3
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA1 Journal article-refereed

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