Printed low-voltage fuse memory on paper

Jaakko Leppäniemi; Tomi Mattila; Kim Eiroma; Toshiko Miyakawa; Kazuhiro Murata; Ari Alastalo

doi:10.1109/LED.2014.2300413

Printed low-voltage fuse memory on paper

Jaakko Leppäniemi, Tomi Mattila, Kim Eiroma, Toshiko Miyakawa, Kazuhiro Murata, Ari Alastalo

BA6304 Flexible sensors and devices

National Institute of Advanced Industrial Science and Technology (AIST)

Research output: Contribution to journal › Article › Scientific › peer-review

12 Citations (Scopus)

Abstract

A printed lateral resistive fuse-type write-once-read-many (WORM) memory on paper substrate is demonstrated. The memory writing process is based on breaking of a silver nanoparticle conductor. Low-voltage and low-current writability demonstrated with printed batteries are enabled by a μm²-range cross-sectional bit area that are achieved by super-fine inkjet technology. Supported by the statistical distribution of the writing times, the bit writing process is attributed to electromigration of silver and the required current density for fusing is found to be 34 mA/μm². The results show an improvement in memory retention time when compared with structurally similar printed antifuse-type WORM memories

Original language	English
Pages (from-to)	354-356
Journal	IEEE Electron Device Letters
Volume	35
Issue number	3
DOIs	https://doi.org/10.1109/LED.2014.2300413
Publication status	Published - 2014
MoE publication type	A1 Journal article-refereed

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@article{07562e1346cc49df844ba006ab33057b,

title = "Printed low-voltage fuse memory on paper",

abstract = "A printed lateral resistive fuse-type write-once-read-many (WORM) memory on paper substrate is demonstrated. The memory writing process is based on breaking of a silver nanoparticle conductor. Low-voltage and low-current writability demonstrated with printed batteries are enabled by a μm2-range cross-sectional bit area that are achieved by super-fine inkjet technology. Supported by the statistical distribution of the writing times, the bit writing process is attributed to electromigration of silver and the required current density for fusing is found to be 34 mA/μm2. The results show an improvement in memory retention time when compared with structurally similar printed antifuse-type WORM memories",

author = "Jaakko Lepp{\"a}niemi and Tomi Mattila and Kim Eiroma and Toshiko Miyakawa and Kazuhiro Murata and Ari Alastalo",

note = "Project code: 73696",

year = "2014",

doi = "10.1109/LED.2014.2300413",

language = "English",

volume = "35",

pages = "354--356",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

number = "3",

}

TY - JOUR

T1 - Printed low-voltage fuse memory on paper

AU - Leppäniemi, Jaakko

AU - Mattila, Tomi

AU - Eiroma, Kim

AU - Miyakawa, Toshiko

AU - Murata, Kazuhiro

AU - Alastalo, Ari

N1 - Project code: 73696

PY - 2014

Y1 - 2014

N2 - A printed lateral resistive fuse-type write-once-read-many (WORM) memory on paper substrate is demonstrated. The memory writing process is based on breaking of a silver nanoparticle conductor. Low-voltage and low-current writability demonstrated with printed batteries are enabled by a μm2-range cross-sectional bit area that are achieved by super-fine inkjet technology. Supported by the statistical distribution of the writing times, the bit writing process is attributed to electromigration of silver and the required current density for fusing is found to be 34 mA/μm2. The results show an improvement in memory retention time when compared with structurally similar printed antifuse-type WORM memories

AB - A printed lateral resistive fuse-type write-once-read-many (WORM) memory on paper substrate is demonstrated. The memory writing process is based on breaking of a silver nanoparticle conductor. Low-voltage and low-current writability demonstrated with printed batteries are enabled by a μm2-range cross-sectional bit area that are achieved by super-fine inkjet technology. Supported by the statistical distribution of the writing times, the bit writing process is attributed to electromigration of silver and the required current density for fusing is found to be 34 mA/μm2. The results show an improvement in memory retention time when compared with structurally similar printed antifuse-type WORM memories

U2 - 10.1109/LED.2014.2300413

DO - 10.1109/LED.2014.2300413

M3 - Article

SN - 0741-3106

VL - 35

SP - 354

EP - 356

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

Printed low-voltage fuse memory on paper

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