Printed low-voltage programmable write-once-read-many-memories

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

1 Citation (Scopus)

Abstract

Printed low-voltage programmable (<; 6 V) write-once-read-many (WORM) memories can be utilized in low-bit count and low-complexity printed electronic systems powered by printed batteries. Such WORM memories can be operated as anti-fuses based on electrical sintering of Ag nanoparticles or as fuses based on breaking of a printed Ag conductor of sub-μm2 cross-sectional area. In this paper, we present initial results on fuse-type WORM memories fabricated with reverse offset printing that can allow narrow line width (~3 μm) with low variation in the cross-sectional area of the bits.
Original languageEnglish
Title of host publicationProceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014
PublisherIEEE Institute of Electrical and Electronic Engineers
ISBN (Print)978-1-4799-4026-4
DOIs
Publication statusPublished - 2014
MoE publication typeA4 Article in a conference publication
Event5th Electronics System-Integration Technology Conference, ESTC 2014 - Helsinki, Finland
Duration: 16 Sep 201418 Sep 2014
Conference number: 5th

Conference

Conference5th Electronics System-Integration Technology Conference, ESTC 2014
Abbreviated titleESTC 2014
CountryFinland
CityHelsinki
Period16/09/1418/09/14

Fingerprint Dive into the research topics of 'Printed low-voltage programmable write-once-read-many-memories'. Together they form a unique fingerprint.

  • Cite this

    Leppäniemi, J., Fukuda, N., Alastalo, A., Mattila, T., Eiroma, K., & Kololuoma, T. (2014). Printed low-voltage programmable write-once-read-many-memories. In Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014 IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/ESTC.2014.6962777