Printed low-voltage programmable write-once-read-many-memories

Jaakko Leppäniemi, Nobuko Fukuda, Ari Alastalo, Tomi Mattila, Kim Eiroma, Terho Kololuoma

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

1 Citation (Scopus)


Printed low-voltage programmable (<; 6 V) write-once-read-many (WORM) memories can be utilized in low-bit count and low-complexity printed electronic systems powered by printed batteries. Such WORM memories can be operated as anti-fuses based on electrical sintering of Ag nanoparticles or as fuses based on breaking of a printed Ag conductor of sub-μm2 cross-sectional area. In this paper, we present initial results on fuse-type WORM memories fabricated with reverse offset printing that can allow narrow line width (~3 μm) with low variation in the cross-sectional area of the bits.
Original languageEnglish
Title of host publicationProceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014
PublisherIEEE Institute of Electrical and Electronic Engineers
ISBN (Print)978-1-4799-4026-4
Publication statusPublished - 2014
MoE publication typeA4 Article in a conference publication
Event5th Electronics System-Integration Technology Conference, ESTC 2014 - Helsinki, Finland
Duration: 16 Sept 201418 Sept 2014
Conference number: 5th


Conference5th Electronics System-Integration Technology Conference, ESTC 2014
Abbreviated titleESTC 2014


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