Abstract
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014 |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| ISBN (Print) | 978-1-4799-4026-4 |
| DOIs | |
| Publication status | Published - 2014 |
| MoE publication type | A4 Article in a conference publication |
| Event | 5th Electronics System-Integration Technology Conference, ESTC 2014 - Helsinki, Finland Duration: 16 Sep 2014 → 18 Sep 2014 Conference number: 5th |
Conference
| Conference | 5th Electronics System-Integration Technology Conference, ESTC 2014 |
|---|---|
| Abbreviated title | ESTC 2014 |
| Country | Finland |
| City | Helsinki |
| Period | 16/09/14 → 18/09/14 |
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Printed low-voltage programmable write-once-read-many-memories. / Leppäniemi, J.; Fukuda, N.; Alastalo, A.; Mattila, T.; Eiroma, K.; Kololuoma, T.
Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014. IEEE Institute of Electrical and Electronic Engineers , 2014.Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review
TY - GEN
T1 - Printed low-voltage programmable write-once-read-many-memories
AU - Leppäniemi, J.
AU - Fukuda, N.
AU - Alastalo, A.
AU - Mattila, T.
AU - Eiroma, K.
AU - Kololuoma, T.
PY - 2014
Y1 - 2014
N2 - Printed low-voltage programmable (<; 6 V) write-once-read-many (WORM) memories can be utilized in low-bit count and low-complexity printed electronic systems powered by printed batteries. Such WORM memories can be operated as anti-fuses based on electrical sintering of Ag nanoparticles or as fuses based on breaking of a printed Ag conductor of sub-μm2 cross-sectional area. In this paper, we present initial results on fuse-type WORM memories fabricated with reverse offset printing that can allow narrow line width (~3 μm) with low variation in the cross-sectional area of the bits.
AB - Printed low-voltage programmable (<; 6 V) write-once-read-many (WORM) memories can be utilized in low-bit count and low-complexity printed electronic systems powered by printed batteries. Such WORM memories can be operated as anti-fuses based on electrical sintering of Ag nanoparticles or as fuses based on breaking of a printed Ag conductor of sub-μm2 cross-sectional area. In this paper, we present initial results on fuse-type WORM memories fabricated with reverse offset printing that can allow narrow line width (~3 μm) with low variation in the cross-sectional area of the bits.
U2 - 10.1109/ESTC.2014.6962777
DO - 10.1109/ESTC.2014.6962777
M3 - Conference article in proceedings
SN - 978-1-4799-4026-4
BT - Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014
PB - IEEE Institute of Electrical and Electronic Engineers
ER -