Abstract
Printed low-voltage programmable (<; 6 V) write-once-read-many (WORM) memories can be utilized in low-bit count and low-complexity printed electronic systems powered by printed batteries. Such WORM memories can be operated as anti-fuses based on electrical sintering of Ag nanoparticles or as fuses based on breaking of a printed Ag conductor of sub-μm2 cross-sectional area. In this paper, we present initial results on fuse-type WORM memories fabricated with reverse offset printing that can allow narrow line width (~3 μm) with low variation in the cross-sectional area of the bits.
Original language | English |
---|---|
Title of host publication | Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014 |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
ISBN (Print) | 978-1-4799-4026-4 |
DOIs | |
Publication status | Published - 2014 |
MoE publication type | A4 Article in a conference publication |
Event | 5th Electronics System-Integration Technology Conference, ESTC 2014 - Helsinki, Finland Duration: 16 Sep 2014 → 18 Sep 2014 Conference number: 5th |
Conference
Conference | 5th Electronics System-Integration Technology Conference, ESTC 2014 |
---|---|
Abbreviated title | ESTC 2014 |
Country/Territory | Finland |
City | Helsinki |
Period | 16/09/14 → 18/09/14 |