Printed low-voltage programmable write-once-read-many-memories

J. Leppäniemi; N. Fukuda; A. Alastalo; T. Mattila; K. Eiroma; T. Kololuoma

doi:10.1109/ESTC.2014.6962777

Printed low-voltage programmable write-once-read-many-memories

J. Leppäniemi, N. Fukuda, A. Alastalo, T. Mattila, K. Eiroma, T. Kololuoma

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

1 Citation (Scopus)

Abstract

Printed low-voltage programmable (<; 6 V) write-once-read-many (WORM) memories can be utilized in low-bit count and low-complexity printed electronic systems powered by printed batteries. Such WORM memories can be operated as anti-fuses based on electrical sintering of Ag nanoparticles or as fuses based on breaking of a printed Ag conductor of sub-μm2 cross-sectional area. In this paper, we present initial results on fuse-type WORM memories fabricated with reverse offset printing that can allow narrow line width (~3 μm) with low variation in the cross-sectional area of the bits.

Original language	English
Title of host publication	Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014
Publisher	IEEE Institute of Electrical and Electronic Engineers
ISBN (Print)	978-1-4799-4026-4
DOIs	https://doi.org/10.1109/ESTC.2014.6962777
Publication status	Published - 2014
MoE publication type	A4 Article in a conference publication
Event	5th Electronics System-Integration Technology Conference, ESTC 2014 - Helsinki, Finland Duration: 16 Sep 2014 → 18 Sep 2014 Conference number: 5th

Conference

Conference	5th Electronics System-Integration Technology Conference, ESTC 2014
Abbreviated title	ESTC 2014
Country/Territory	Finland
City	Helsinki
Period	16/09/14 → 18/09/14

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Cite this

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title = "Printed low-voltage programmable write-once-read-many-memories",

abstract = "Printed low-voltage programmable (<; 6 V) write-once-read-many (WORM) memories can be utilized in low-bit count and low-complexity printed electronic systems powered by printed batteries. Such WORM memories can be operated as anti-fuses based on electrical sintering of Ag nanoparticles or as fuses based on breaking of a printed Ag conductor of sub-μm2 cross-sectional area. In this paper, we present initial results on fuse-type WORM memories fabricated with reverse offset printing that can allow narrow line width (~3 μm) with low variation in the cross-sectional area of the bits.",

author = "J. Lepp{\"a}niemi and N. Fukuda and A. Alastalo and T. Mattila and K. Eiroma and T. Kololuoma",

year = "2014",

doi = "10.1109/ESTC.2014.6962777",

language = "English",

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booktitle = "Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "5th Electronics System-Integration Technology Conference, ESTC 2014, ESTC 2014 ; Conference date: 16-09-2014 Through 18-09-2014",

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Leppäniemi, J, Fukuda, N, Alastalo, A , Mattila, T , Eiroma, K & Kololuoma, T 2014, Printed low-voltage programmable write-once-read-many-memories. in Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014. IEEE Institute of Electrical and Electronic Engineers, 5th Electronics System-Integration Technology Conference, ESTC 2014, Helsinki, Finland, 16/09/14. https://doi.org/10.1109/ESTC.2014.6962777

Printed low-voltage programmable write-once-read-many-memories. / Leppäniemi, J.; Fukuda, N.; Alastalo, A.; Mattila, T.; Eiroma, K.; Kololuoma, T.

Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014. IEEE Institute of Electrical and Electronic Engineers, 2014.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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AU - Leppäniemi, J.

AU - Fukuda, N.

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AU - Mattila, T.

AU - Eiroma, K.

AU - Kololuoma, T.

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N2 - Printed low-voltage programmable (<; 6 V) write-once-read-many (WORM) memories can be utilized in low-bit count and low-complexity printed electronic systems powered by printed batteries. Such WORM memories can be operated as anti-fuses based on electrical sintering of Ag nanoparticles or as fuses based on breaking of a printed Ag conductor of sub-μm2 cross-sectional area. In this paper, we present initial results on fuse-type WORM memories fabricated with reverse offset printing that can allow narrow line width (~3 μm) with low variation in the cross-sectional area of the bits.

AB - Printed low-voltage programmable (<; 6 V) write-once-read-many (WORM) memories can be utilized in low-bit count and low-complexity printed electronic systems powered by printed batteries. Such WORM memories can be operated as anti-fuses based on electrical sintering of Ag nanoparticles or as fuses based on breaking of a printed Ag conductor of sub-μm2 cross-sectional area. In this paper, we present initial results on fuse-type WORM memories fabricated with reverse offset printing that can allow narrow line width (~3 μm) with low variation in the cross-sectional area of the bits.

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M3 - Conference article in proceedings

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T2 - 5th Electronics System-Integration Technology Conference, ESTC 2014

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ER -

Printed low-voltage programmable write-once-read-many-memories

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