Printed low-voltage programmable write-once-read-many-memories

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

Printed low-voltage programmable (<; 6 V) write-once-read-many (WORM) memories can be utilized in low-bit count and low-complexity printed electronic systems powered by printed batteries. Such WORM memories can be operated as anti-fuses based on electrical sintering of Ag nanoparticles or as fuses based on breaking of a printed Ag conductor of sub-μm2 cross-sectional area. In this paper, we present initial results on fuse-type WORM memories fabricated with reverse offset printing that can allow narrow line width (~3 μm) with low variation in the cross-sectional area of the bits.
Original languageEnglish
Title of host publicationProceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014
PublisherInstitute of Electrical and Electronic Engineers IEEE
ISBN (Print)978-1-4799-4026-4
DOIs
Publication statusPublished - 2014
MoE publication typeA4 Article in a conference publication
Event5th Electronics System-Integration Technology Conference, ESTC 2014 - Helsinki, Finland
Duration: 16 Sep 201418 Sep 2014
Conference number: 5th

Conference

Conference5th Electronics System-Integration Technology Conference, ESTC 2014
Abbreviated titleESTC 2014
CountryFinland
CityHelsinki
Period16/09/1418/09/14

Fingerprint

Electric fuses
Data storage equipment
Electric potential
Offset printing
Linewidth
Sintering
Nanoparticles

Cite this

Leppäniemi, J., Fukuda, N., Alastalo, A., Mattila, T., Eiroma, K., & Kololuoma, T. (2014). Printed low-voltage programmable write-once-read-many-memories. In Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014 Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/ESTC.2014.6962777
Leppäniemi, J. ; Fukuda, N. ; Alastalo, A. ; Mattila, T. ; Eiroma, K. ; Kololuoma, T. / Printed low-voltage programmable write-once-read-many-memories. Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014. Institute of Electrical and Electronic Engineers IEEE, 2014.
@inproceedings{57ee78212fa043509ab752ea761da266,
title = "Printed low-voltage programmable write-once-read-many-memories",
abstract = "Printed low-voltage programmable (<; 6 V) write-once-read-many (WORM) memories can be utilized in low-bit count and low-complexity printed electronic systems powered by printed batteries. Such WORM memories can be operated as anti-fuses based on electrical sintering of Ag nanoparticles or as fuses based on breaking of a printed Ag conductor of sub-μm2 cross-sectional area. In this paper, we present initial results on fuse-type WORM memories fabricated with reverse offset printing that can allow narrow line width (~3 μm) with low variation in the cross-sectional area of the bits.",
author = "J. Lepp{\"a}niemi and N. Fukuda and A. Alastalo and T. Mattila and K. Eiroma and T. Kololuoma",
year = "2014",
doi = "10.1109/ESTC.2014.6962777",
language = "English",
isbn = "978-1-4799-4026-4",
booktitle = "Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
address = "United States",

}

Leppäniemi, J, Fukuda, N, Alastalo, A, Mattila, T, Eiroma, K & Kololuoma, T 2014, Printed low-voltage programmable write-once-read-many-memories. in Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014. Institute of Electrical and Electronic Engineers IEEE, 5th Electronics System-Integration Technology Conference, ESTC 2014, Helsinki, Finland, 16/09/14. https://doi.org/10.1109/ESTC.2014.6962777

Printed low-voltage programmable write-once-read-many-memories. / Leppäniemi, J.; Fukuda, N.; Alastalo, A.; Mattila, T.; Eiroma, K.; Kololuoma, T.

Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014. Institute of Electrical and Electronic Engineers IEEE, 2014.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Printed low-voltage programmable write-once-read-many-memories

AU - Leppäniemi, J.

AU - Fukuda, N.

AU - Alastalo, A.

AU - Mattila, T.

AU - Eiroma, K.

AU - Kololuoma, T.

PY - 2014

Y1 - 2014

N2 - Printed low-voltage programmable (<; 6 V) write-once-read-many (WORM) memories can be utilized in low-bit count and low-complexity printed electronic systems powered by printed batteries. Such WORM memories can be operated as anti-fuses based on electrical sintering of Ag nanoparticles or as fuses based on breaking of a printed Ag conductor of sub-μm2 cross-sectional area. In this paper, we present initial results on fuse-type WORM memories fabricated with reverse offset printing that can allow narrow line width (~3 μm) with low variation in the cross-sectional area of the bits.

AB - Printed low-voltage programmable (<; 6 V) write-once-read-many (WORM) memories can be utilized in low-bit count and low-complexity printed electronic systems powered by printed batteries. Such WORM memories can be operated as anti-fuses based on electrical sintering of Ag nanoparticles or as fuses based on breaking of a printed Ag conductor of sub-μm2 cross-sectional area. In this paper, we present initial results on fuse-type WORM memories fabricated with reverse offset printing that can allow narrow line width (~3 μm) with low variation in the cross-sectional area of the bits.

U2 - 10.1109/ESTC.2014.6962777

DO - 10.1109/ESTC.2014.6962777

M3 - Conference article in proceedings

SN - 978-1-4799-4026-4

BT - Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014

PB - Institute of Electrical and Electronic Engineers IEEE

ER -

Leppäniemi J, Fukuda N, Alastalo A, Mattila T, Eiroma K, Kololuoma T. Printed low-voltage programmable write-once-read-many-memories. In Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014. Institute of Electrical and Electronic Engineers IEEE. 2014 https://doi.org/10.1109/ESTC.2014.6962777