Printed low-voltage programmable write-once-read-many-memories

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)

    Abstract

    Printed low-voltage programmable (<; 6 V) write-once-read-many (WORM) memories can be utilized in low-bit count and low-complexity printed electronic systems powered by printed batteries. Such WORM memories can be operated as anti-fuses based on electrical sintering of Ag nanoparticles or as fuses based on breaking of a printed Ag conductor of sub-μm2 cross-sectional area. In this paper, we present initial results on fuse-type WORM memories fabricated with reverse offset printing that can allow narrow line width (~3 μm) with low variation in the cross-sectional area of the bits.
    Original languageEnglish
    Title of host publicationProceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014
    PublisherIEEE Institute of Electrical and Electronic Engineers
    ISBN (Print)978-1-4799-4026-4
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA4 Article in a conference publication
    Event5th Electronics System-Integration Technology Conference, ESTC 2014 - Helsinki, Finland
    Duration: 16 Sep 201418 Sep 2014
    Conference number: 5th

    Conference

    Conference5th Electronics System-Integration Technology Conference, ESTC 2014
    Abbreviated titleESTC 2014
    Country/TerritoryFinland
    CityHelsinki
    Period16/09/1418/09/14

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