Printed polymer and carbon nanotube thin film transistors with high-k barium titanate insulator

Tomi Hassinen, B Ahn, S Ko (Corresponding Author)

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

One of the difficulties in printed electronics is the robustness and reliability of the thin film transistor gate dielectrics. Thin layers are needed for low voltage operation. Proportionally thicker layers can be used if a higher permittivity (high-k) dielectric is chosen. Here we present the experimental results of partly inkjet and gravure printed thin film transistors with a commercial blend of barium titanate and poly(methyl methacrylate) (PMMA). Poly(triarylamine) (PTAA) or single walled carbon nanotube (SWCNT) inks were deposited as the semiconductor layer. Gravure printing of the dielectric material worked very well. On the other hand the SWCNT ink printing resulted in very thin layers which did not work well in transistors. Large hysteresis and high off current was present in most cases. The reference PTAA transistor measurements show that also a polymer semiconductor can work without hysteresis on top of the high-k dielectric.
Original languageEnglish
Number of pages5
JournalJapanese Journal of Applied Physics
Volume53
Issue number5S3
DOIs
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed

Fingerprint

Barium titanate
Single-walled carbon nanotubes (SWCN)
Thin film transistors
Ink
barium
Hysteresis
Carbon nanotubes
nanotubes
Transistors
transistors
carbon nanotubes
insulators
Semiconductor materials
Gate dielectrics
polymers
inks
Polymers
thin films
Polymethyl methacrylates
printing

Cite this

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abstract = "One of the difficulties in printed electronics is the robustness and reliability of the thin film transistor gate dielectrics. Thin layers are needed for low voltage operation. Proportionally thicker layers can be used if a higher permittivity (high-k) dielectric is chosen. Here we present the experimental results of partly inkjet and gravure printed thin film transistors with a commercial blend of barium titanate and poly(methyl methacrylate) (PMMA). Poly(triarylamine) (PTAA) or single walled carbon nanotube (SWCNT) inks were deposited as the semiconductor layer. Gravure printing of the dielectric material worked very well. On the other hand the SWCNT ink printing resulted in very thin layers which did not work well in transistors. Large hysteresis and high off current was present in most cases. The reference PTAA transistor measurements show that also a polymer semiconductor can work without hysteresis on top of the high-k dielectric.",
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Printed polymer and carbon nanotube thin film transistors with high-k barium titanate insulator. / Hassinen, Tomi; Ahn, B; Ko, S (Corresponding Author).

In: Japanese Journal of Applied Physics, Vol. 53, No. 5S3, 2014.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Printed polymer and carbon nanotube thin film transistors with high-k barium titanate insulator

AU - Hassinen, Tomi

AU - Ahn, B

AU - Ko, S

PY - 2014

Y1 - 2014

N2 - One of the difficulties in printed electronics is the robustness and reliability of the thin film transistor gate dielectrics. Thin layers are needed for low voltage operation. Proportionally thicker layers can be used if a higher permittivity (high-k) dielectric is chosen. Here we present the experimental results of partly inkjet and gravure printed thin film transistors with a commercial blend of barium titanate and poly(methyl methacrylate) (PMMA). Poly(triarylamine) (PTAA) or single walled carbon nanotube (SWCNT) inks were deposited as the semiconductor layer. Gravure printing of the dielectric material worked very well. On the other hand the SWCNT ink printing resulted in very thin layers which did not work well in transistors. Large hysteresis and high off current was present in most cases. The reference PTAA transistor measurements show that also a polymer semiconductor can work without hysteresis on top of the high-k dielectric.

AB - One of the difficulties in printed electronics is the robustness and reliability of the thin film transistor gate dielectrics. Thin layers are needed for low voltage operation. Proportionally thicker layers can be used if a higher permittivity (high-k) dielectric is chosen. Here we present the experimental results of partly inkjet and gravure printed thin film transistors with a commercial blend of barium titanate and poly(methyl methacrylate) (PMMA). Poly(triarylamine) (PTAA) or single walled carbon nanotube (SWCNT) inks were deposited as the semiconductor layer. Gravure printing of the dielectric material worked very well. On the other hand the SWCNT ink printing resulted in very thin layers which did not work well in transistors. Large hysteresis and high off current was present in most cases. The reference PTAA transistor measurements show that also a polymer semiconductor can work without hysteresis on top of the high-k dielectric.

U2 - 10.7567/JJAP.53.05HB14

DO - 10.7567/JJAP.53.05HB14

M3 - Article

VL - 53

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

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