Printed polymer and carbon nanotube thin film transistors with high-k barium titanate insulator

Tomi Hassinen, B Ahn, S Ko (Corresponding Author)

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)

    Abstract

    One of the difficulties in printed electronics is the robustness and reliability of the thin film transistor gate dielectrics. Thin layers are needed for low voltage operation. Proportionally thicker layers can be used if a higher permittivity (high-k) dielectric is chosen. Here we present the experimental results of partly inkjet and gravure printed thin film transistors with a commercial blend of barium titanate and poly(methyl methacrylate) (PMMA). Poly(triarylamine) (PTAA) or single walled carbon nanotube (SWCNT) inks were deposited as the semiconductor layer. Gravure printing of the dielectric material worked very well. On the other hand the SWCNT ink printing resulted in very thin layers which did not work well in transistors. Large hysteresis and high off current was present in most cases. The reference PTAA transistor measurements show that also a polymer semiconductor can work without hysteresis on top of the high-k dielectric.
    Original languageEnglish
    Number of pages5
    JournalJapanese Journal of Applied Physics
    Volume53
    Issue number5S3
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Barium titanate
    Single-walled carbon nanotubes (SWCN)
    Thin film transistors
    Ink
    barium
    Hysteresis
    Carbon nanotubes
    nanotubes
    Transistors
    transistors
    carbon nanotubes
    insulators
    Semiconductor materials
    Gate dielectrics
    polymers
    inks
    Polymers
    thin films
    Polymethyl methacrylates
    printing

    Cite this

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    abstract = "One of the difficulties in printed electronics is the robustness and reliability of the thin film transistor gate dielectrics. Thin layers are needed for low voltage operation. Proportionally thicker layers can be used if a higher permittivity (high-k) dielectric is chosen. Here we present the experimental results of partly inkjet and gravure printed thin film transistors with a commercial blend of barium titanate and poly(methyl methacrylate) (PMMA). Poly(triarylamine) (PTAA) or single walled carbon nanotube (SWCNT) inks were deposited as the semiconductor layer. Gravure printing of the dielectric material worked very well. On the other hand the SWCNT ink printing resulted in very thin layers which did not work well in transistors. Large hysteresis and high off current was present in most cases. The reference PTAA transistor measurements show that also a polymer semiconductor can work without hysteresis on top of the high-k dielectric.",
    author = "Tomi Hassinen and B Ahn and S Ko",
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    Printed polymer and carbon nanotube thin film transistors with high-k barium titanate insulator. / Hassinen, Tomi; Ahn, B; Ko, S (Corresponding Author).

    In: Japanese Journal of Applied Physics, Vol. 53, No. 5S3, 2014.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Printed polymer and carbon nanotube thin film transistors with high-k barium titanate insulator

    AU - Hassinen, Tomi

    AU - Ahn, B

    AU - Ko, S

    PY - 2014

    Y1 - 2014

    N2 - One of the difficulties in printed electronics is the robustness and reliability of the thin film transistor gate dielectrics. Thin layers are needed for low voltage operation. Proportionally thicker layers can be used if a higher permittivity (high-k) dielectric is chosen. Here we present the experimental results of partly inkjet and gravure printed thin film transistors with a commercial blend of barium titanate and poly(methyl methacrylate) (PMMA). Poly(triarylamine) (PTAA) or single walled carbon nanotube (SWCNT) inks were deposited as the semiconductor layer. Gravure printing of the dielectric material worked very well. On the other hand the SWCNT ink printing resulted in very thin layers which did not work well in transistors. Large hysteresis and high off current was present in most cases. The reference PTAA transistor measurements show that also a polymer semiconductor can work without hysteresis on top of the high-k dielectric.

    AB - One of the difficulties in printed electronics is the robustness and reliability of the thin film transistor gate dielectrics. Thin layers are needed for low voltage operation. Proportionally thicker layers can be used if a higher permittivity (high-k) dielectric is chosen. Here we present the experimental results of partly inkjet and gravure printed thin film transistors with a commercial blend of barium titanate and poly(methyl methacrylate) (PMMA). Poly(triarylamine) (PTAA) or single walled carbon nanotube (SWCNT) inks were deposited as the semiconductor layer. Gravure printing of the dielectric material worked very well. On the other hand the SWCNT ink printing resulted in very thin layers which did not work well in transistors. Large hysteresis and high off current was present in most cases. The reference PTAA transistor measurements show that also a polymer semiconductor can work without hysteresis on top of the high-k dielectric.

    U2 - 10.7567/JJAP.53.05HB14

    DO - 10.7567/JJAP.53.05HB14

    M3 - Article

    VL - 53

    JO - Japanese Journal of Applied Physics

    JF - Japanese Journal of Applied Physics

    SN - 0021-4922

    IS - 5S3

    ER -