Printed pressure sensor matrix with organic field-effect transistors

Research output: Contribution to journalArticleScientificpeer-review

13 Citations (Scopus)

Abstract

The paper presents the construction and fabrication method of a pressure sensor matrix with organic field-effect transistors. The sensor structure consists of a matrix of air-gap transistors which is realized by roll-to-roll processing and laminating methods. High aspect ratio spacer structures are made by inkjet printing. The sensor cell transistor senses the applied force on the top substrate due to changes in the air-gap dimension. The sensor matrix has measurement range of 0.4 kPa-1-4.4 kPa-1, sensitivity 0.4 ± 0.1 kPa-1 and time response better than 300 ms. The structure is scalable and it has a sensitivity comparable to state of the art pressure sensor matrices that use organic field-effect transistors. Its fabrication process, however, includes standard, low cost mass production steps of printed electronics and it can be transferred to a roll-to-roll process.
Original languageEnglish
Pages (from-to)343-348
JournalSensors and Actuators A: Physical
Volume236
DOIs
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

Fingerprint

Organic field effect transistors
Pressure sensors
pressure sensors
field effect transistors
Sensors
Transistors
matrices
Fabrication
Laminating
sensors
transistors
Air
fabrication
Printing
Aspect ratio
time response
sensitivity
air
rangefinding
Electronic equipment

Keywords

  • pressure sensor
  • printed electronics
  • tactile sensing

Cite this

@article{5c75b29e636b465fa44fa067e1ed4fb4,
title = "Printed pressure sensor matrix with organic field-effect transistors",
abstract = "The paper presents the construction and fabrication method of a pressure sensor matrix with organic field-effect transistors. The sensor structure consists of a matrix of air-gap transistors which is realized by roll-to-roll processing and laminating methods. High aspect ratio spacer structures are made by inkjet printing. The sensor cell transistor senses the applied force on the top substrate due to changes in the air-gap dimension. The sensor matrix has measurement range of 0.4 kPa-1-4.4 kPa-1, sensitivity 0.4 ± 0.1 kPa-1 and time response better than 300 ms. The structure is scalable and it has a sensitivity comparable to state of the art pressure sensor matrices that use organic field-effect transistors. Its fabrication process, however, includes standard, low cost mass production steps of printed electronics and it can be transferred to a roll-to-roll process.",
keywords = "pressure sensor, printed electronics, tactile sensing",
author = "Tomi Hassinen and Kim Eiroma and Tapio M{\"a}kel{\"a} and Vladimir Ermolov",
note = "Project code: 87346",
year = "2015",
doi = "10.1016/j.sna.2015.11.007",
language = "English",
volume = "236",
pages = "343--348",
journal = "Sensors and Actuators A: Physical",
issn = "0924-4247",
publisher = "Elsevier",

}

Printed pressure sensor matrix with organic field-effect transistors. / Hassinen, Tomi; Eiroma, Kim; Mäkelä, Tapio; Ermolov, Vladimir.

In: Sensors and Actuators A: Physical, Vol. 236, 2015, p. 343-348.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Printed pressure sensor matrix with organic field-effect transistors

AU - Hassinen, Tomi

AU - Eiroma, Kim

AU - Mäkelä, Tapio

AU - Ermolov, Vladimir

N1 - Project code: 87346

PY - 2015

Y1 - 2015

N2 - The paper presents the construction and fabrication method of a pressure sensor matrix with organic field-effect transistors. The sensor structure consists of a matrix of air-gap transistors which is realized by roll-to-roll processing and laminating methods. High aspect ratio spacer structures are made by inkjet printing. The sensor cell transistor senses the applied force on the top substrate due to changes in the air-gap dimension. The sensor matrix has measurement range of 0.4 kPa-1-4.4 kPa-1, sensitivity 0.4 ± 0.1 kPa-1 and time response better than 300 ms. The structure is scalable and it has a sensitivity comparable to state of the art pressure sensor matrices that use organic field-effect transistors. Its fabrication process, however, includes standard, low cost mass production steps of printed electronics and it can be transferred to a roll-to-roll process.

AB - The paper presents the construction and fabrication method of a pressure sensor matrix with organic field-effect transistors. The sensor structure consists of a matrix of air-gap transistors which is realized by roll-to-roll processing and laminating methods. High aspect ratio spacer structures are made by inkjet printing. The sensor cell transistor senses the applied force on the top substrate due to changes in the air-gap dimension. The sensor matrix has measurement range of 0.4 kPa-1-4.4 kPa-1, sensitivity 0.4 ± 0.1 kPa-1 and time response better than 300 ms. The structure is scalable and it has a sensitivity comparable to state of the art pressure sensor matrices that use organic field-effect transistors. Its fabrication process, however, includes standard, low cost mass production steps of printed electronics and it can be transferred to a roll-to-roll process.

KW - pressure sensor

KW - printed electronics

KW - tactile sensing

U2 - 10.1016/j.sna.2015.11.007

DO - 10.1016/j.sna.2015.11.007

M3 - Article

VL - 236

SP - 343

EP - 348

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

SN - 0924-4247

ER -