Fully printed low-voltage programmable resistive write-once-read-many (WORM) memory on a flexible substrate is investigated. The memory concept is demonstrated using inkjet-printed silver nanoparticle structures on a photopaper. The initial high-resistance state “0” is written into the low-resistance state “1” using rapid electrical sintering. A key advantage is low writing power and energy. The long-term stability of the initial nonsintered state is found to require special attention to obtain a sufficient shelf storage time. The memory design offers potential for high-throughput roll-to-roll production.
- Electrical sintering
- low-voltage programmable memory
- printed memory
- write-once memory