Processing and characterization of edgeless radiation detectors for large area detection

Juha Kalliopuska (Corresponding Author), Xiaopeng Wu, J. Jakubek, Simo Eränen, Tuula Virolainen

Research output: Contribution to journalArticleScientificpeer-review

9 Citations (Scopus)

Abstract

The edgeless or active edge silicon pixel detectors have been gaining a lot of interest due to improved silicon processing capabilities. At VTT, we have recently triggered a multi-project wafer process of edgeless silicon detectors. Totally 80 pieces of 150 mm wafers were processed to provide a given number of detector variations. Fabricated detector thicknesses were 100, 200, 300 and 500 µm. The polarities of the fabricated detectors on the given thicknesses were n-in-n, p-in-n, n-in-p and p-in-p. On the n-in-n and n-in-p wafers the pixel isolation was made either with a common p-stop grid or with a shallow p-spray doping. The wafer materials were high resistivity Float Zone and Magnetic Czochralski silicon with crystal orientation of <100>. In this paper, the electric properties on various types of detectors are presented. The results from spectroscopic measurement show a good energy resolution of the edge pixels, indicating an excellent charge collection near the edge pixels of the edgeless detector.
Original languageEnglish
Pages (from-to)205-209
JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume731
DOIs
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

Fingerprint

Radiation detectors
radiation detectors
Detectors
detectors
Processing
Pixels
pixels
wafers
Silicon
silicon
Silicon detectors
float zones
Crystal orientation
Electric properties
sprayers
Doping (additives)
isolation
polarity
grids
electrical resistivity

Keywords

  • active edge
  • edgeless
  • pixel detector
  • silicon detector
  • timepix

Cite this

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title = "Processing and characterization of edgeless radiation detectors for large area detection",
abstract = "The edgeless or active edge silicon pixel detectors have been gaining a lot of interest due to improved silicon processing capabilities. At VTT, we have recently triggered a multi-project wafer process of edgeless silicon detectors. Totally 80 pieces of 150 mm wafers were processed to provide a given number of detector variations. Fabricated detector thicknesses were 100, 200, 300 and 500 µm. The polarities of the fabricated detectors on the given thicknesses were n-in-n, p-in-n, n-in-p and p-in-p. On the n-in-n and n-in-p wafers the pixel isolation was made either with a common p-stop grid or with a shallow p-spray doping. The wafer materials were high resistivity Float Zone and Magnetic Czochralski silicon with crystal orientation of <100>. In this paper, the electric properties on various types of detectors are presented. The results from spectroscopic measurement show a good energy resolution of the edge pixels, indicating an excellent charge collection near the edge pixels of the edgeless detector.",
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author = "Juha Kalliopuska and Xiaopeng Wu and J. Jakubek and Simo Er{\"a}nen and Tuula Virolainen",
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Processing and characterization of edgeless radiation detectors for large area detection. / Kalliopuska, Juha (Corresponding Author); Wu, Xiaopeng; Jakubek, J.; Eränen, Simo; Virolainen, Tuula.

In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 731, 2013, p. 205-209.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

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AU - Kalliopuska, Juha

AU - Wu, Xiaopeng

AU - Jakubek, J.

AU - Eränen, Simo

AU - Virolainen, Tuula

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AB - The edgeless or active edge silicon pixel detectors have been gaining a lot of interest due to improved silicon processing capabilities. At VTT, we have recently triggered a multi-project wafer process of edgeless silicon detectors. Totally 80 pieces of 150 mm wafers were processed to provide a given number of detector variations. Fabricated detector thicknesses were 100, 200, 300 and 500 µm. The polarities of the fabricated detectors on the given thicknesses were n-in-n, p-in-n, n-in-p and p-in-p. On the n-in-n and n-in-p wafers the pixel isolation was made either with a common p-stop grid or with a shallow p-spray doping. The wafer materials were high resistivity Float Zone and Magnetic Czochralski silicon with crystal orientation of <100>. In this paper, the electric properties on various types of detectors are presented. The results from spectroscopic measurement show a good energy resolution of the edge pixels, indicating an excellent charge collection near the edge pixels of the edgeless detector.

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KW - edgeless

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