Processing and characterization of edgeless radiation detectors for large area detection

Juha Kalliopuska (Corresponding Author), Xiaopeng Wu, J. Jakubek, Simo Eränen, Tuula Virolainen

Research output: Contribution to journalArticleScientificpeer-review

12 Citations (Scopus)


The edgeless or active edge silicon pixel detectors have been gaining a lot of interest due to improved silicon processing capabilities. At VTT, we have recently triggered a multi-project wafer process of edgeless silicon detectors. Totally 80 pieces of 150 mm wafers were processed to provide a given number of detector variations. Fabricated detector thicknesses were 100, 200, 300 and 500 µm. The polarities of the fabricated detectors on the given thicknesses were n-in-n, p-in-n, n-in-p and p-in-p. On the n-in-n and n-in-p wafers the pixel isolation was made either with a common p-stop grid or with a shallow p-spray doping. The wafer materials were high resistivity Float Zone and Magnetic Czochralski silicon with crystal orientation of <100>. In this paper, the electric properties on various types of detectors are presented. The results from spectroscopic measurement show a good energy resolution of the edge pixels, indicating an excellent charge collection near the edge pixels of the edgeless detector.
Original languageEnglish
Pages (from-to)205-209
JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed


  • active edge
  • edgeless
  • pixel detector
  • silicon detector
  • timepix


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