The edgeless or active edge silicon pixel detectors have been gaining a lot of interest due to improved silicon processing capabilities. At VTT, we have recently triggered a multi-project wafer process of edgeless silicon detectors. Totally 80 pieces of 150 mm wafers were processed to provide a given number of detector variations. Fabricated detector thicknesses were 100, 200, 300 and 500 µm. The polarities of the fabricated detectors on the given thicknesses were n-in-n, p-in-n, n-in-p and p-in-p. On the n-in-n and n-in-p wafers the pixel isolation was made either with a common p-stop grid or with a shallow p-spray doping. The wafer materials were high resistivity Float Zone and Magnetic Czochralski silicon with crystal orientation of <100>. In this paper, the electric properties on various types of detectors are presented. The results from spectroscopic measurement show a good energy resolution of the edge pixels, indicating an excellent charge collection near the edge pixels of the edgeless detector.
|Journal||Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment|
|Publication status||Published - 2013|
|MoE publication type||A1 Journal article-refereed|
- active edge
- pixel detector
- silicon detector