Properties of ALD grown Al2O3-TiO2 laminates investigated by high temperature XRD/XRR and in situ wafer curvature measurements

Mikko J. Heikkilä, Oili Ylivaara, Elisa Atosuo, Riikka L. Puurunen, Mikko Ritala, Markku Leskelä

    Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

    Abstract

    ALD is based on sequential and self-limiting surface reactions enabling growth of laminated layers of almost any composition and layer thickness. Thin films made by ALD are common in MEMS devices, and depending on the stage where those are applied, they might be exposed to large temperature variations during subsequent processing. Thermomechanical properties of ALD Al2O3-TiO2 (ATO) nanolaminates, grown from TiCl4/TMA and H2O at 200 °C with varying bilayer thickness, were studied here in situ during annealing. In HTXRR data, the superlattice peak indicates quality and interface sharpness of the nanolaminate; the onset of layer mixing is detected from the decrease of peak intensity. The discrete sublayers mixed here already below 450°C. In-situ curvature measurement showed only moderate changes detected upon heating of the structure up to 500°C and back to room temperature. With HTXRD it was found that anatase crystallized first at ~650 °C and rutile at ~725 °C, while corundum appeared at ~900 °C. For most laminates rutile and corundum remained as major phases, only in thickest bilayer there were signs of Al2TiO5/Ti3O5. Combining HTXRD/HTXRR with in-situ curvature measurements help to find processing window for ATO nanolaminates, where depending on application little to no changes in thermomechanical properties are needed. Not only this is useful for MEMS applications where thermal budget influences the usability of the material, but similar methodology can be used to study other laminate structures as well.
    Original languageEnglish
    Title of host publication2018 E-MRS Fall book of abstracts
    Publication statusPublished - 19 Sep 2018
    MoE publication typeNot Eligible
    Event2018 E-MRS Fall Meeting and Exhibit - Warsaw University of Technology, Warsaw, Poland
    Duration: 17 Sep 201820 Sep 2018
    https://www.european-mrs.com/meetings/2018-fall-meeting

    Conference

    Conference2018 E-MRS Fall Meeting and Exhibit
    Abbreviated title2018 E-MRS Fall
    CountryPoland
    CityWarsaw
    Period17/09/1820/09/18
    Internet address

    Fingerprint

    rutile
    laminates
    microelectromechanical systems
    aluminum oxides
    curvature
    wafers
    sharpness
    anatase
    budgets
    surface reactions
    methodology
    annealing
    heating
    room temperature
    thin films
    temperature

    Keywords

    • ALD
    • Atomic Layer Deposition
    • Nanolaminate

    Cite this

    Heikkilä, M. J., Ylivaara, O., Atosuo, E., Puurunen, R. L., Ritala, M., & Leskelä, M. (2018). Properties of ALD grown Al2O3-TiO2 laminates investigated by high temperature XRD/XRR and in situ wafer curvature measurements. In 2018 E-MRS Fall book of abstracts
    Heikkilä, Mikko J. ; Ylivaara, Oili ; Atosuo, Elisa ; Puurunen, Riikka L. ; Ritala, Mikko ; Leskelä, Markku. / Properties of ALD grown Al2O3-TiO2 laminates investigated by high temperature XRD/XRR and in situ wafer curvature measurements. 2018 E-MRS Fall book of abstracts. 2018.
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    abstract = "ALD is based on sequential and self-limiting surface reactions enabling growth of laminated layers of almost any composition and layer thickness. Thin films made by ALD are common in MEMS devices, and depending on the stage where those are applied, they might be exposed to large temperature variations during subsequent processing. Thermomechanical properties of ALD Al2O3-TiO2 (ATO) nanolaminates, grown from TiCl4/TMA and H2O at 200 °C with varying bilayer thickness, were studied here in situ during annealing. In HTXRR data, the superlattice peak indicates quality and interface sharpness of the nanolaminate; the onset of layer mixing is detected from the decrease of peak intensity. The discrete sublayers mixed here already below 450°C. In-situ curvature measurement showed only moderate changes detected upon heating of the structure up to 500°C and back to room temperature. With HTXRD it was found that anatase crystallized first at ~650 °C and rutile at ~725 °C, while corundum appeared at ~900 °C. For most laminates rutile and corundum remained as major phases, only in thickest bilayer there were signs of Al2TiO5/Ti3O5. Combining HTXRD/HTXRR with in-situ curvature measurements help to find processing window for ATO nanolaminates, where depending on application little to no changes in thermomechanical properties are needed. Not only this is useful for MEMS applications where thermal budget influences the usability of the material, but similar methodology can be used to study other laminate structures as well.",
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    Heikkilä, MJ, Ylivaara, O, Atosuo, E, Puurunen, RL, Ritala, M & Leskelä, M 2018, Properties of ALD grown Al2O3-TiO2 laminates investigated by high temperature XRD/XRR and in situ wafer curvature measurements. in 2018 E-MRS Fall book of abstracts. 2018 E-MRS Fall Meeting and Exhibit, Warsaw, Poland, 17/09/18.

    Properties of ALD grown Al2O3-TiO2 laminates investigated by high temperature XRD/XRR and in situ wafer curvature measurements. / Heikkilä, Mikko J.; Ylivaara, Oili; Atosuo, Elisa; Puurunen, Riikka L.; Ritala, Mikko; Leskelä, Markku.

    2018 E-MRS Fall book of abstracts. 2018.

    Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

    TY - CHAP

    T1 - Properties of ALD grown Al2O3-TiO2 laminates investigated by high temperature XRD/XRR and in situ wafer curvature measurements

    AU - Heikkilä, Mikko J.

    AU - Ylivaara, Oili

    AU - Atosuo, Elisa

    AU - Puurunen, Riikka L.

    AU - Ritala, Mikko

    AU - Leskelä, Markku

    PY - 2018/9/19

    Y1 - 2018/9/19

    N2 - ALD is based on sequential and self-limiting surface reactions enabling growth of laminated layers of almost any composition and layer thickness. Thin films made by ALD are common in MEMS devices, and depending on the stage where those are applied, they might be exposed to large temperature variations during subsequent processing. Thermomechanical properties of ALD Al2O3-TiO2 (ATO) nanolaminates, grown from TiCl4/TMA and H2O at 200 °C with varying bilayer thickness, were studied here in situ during annealing. In HTXRR data, the superlattice peak indicates quality and interface sharpness of the nanolaminate; the onset of layer mixing is detected from the decrease of peak intensity. The discrete sublayers mixed here already below 450°C. In-situ curvature measurement showed only moderate changes detected upon heating of the structure up to 500°C and back to room temperature. With HTXRD it was found that anatase crystallized first at ~650 °C and rutile at ~725 °C, while corundum appeared at ~900 °C. For most laminates rutile and corundum remained as major phases, only in thickest bilayer there were signs of Al2TiO5/Ti3O5. Combining HTXRD/HTXRR with in-situ curvature measurements help to find processing window for ATO nanolaminates, where depending on application little to no changes in thermomechanical properties are needed. Not only this is useful for MEMS applications where thermal budget influences the usability of the material, but similar methodology can be used to study other laminate structures as well.

    AB - ALD is based on sequential and self-limiting surface reactions enabling growth of laminated layers of almost any composition and layer thickness. Thin films made by ALD are common in MEMS devices, and depending on the stage where those are applied, they might be exposed to large temperature variations during subsequent processing. Thermomechanical properties of ALD Al2O3-TiO2 (ATO) nanolaminates, grown from TiCl4/TMA and H2O at 200 °C with varying bilayer thickness, were studied here in situ during annealing. In HTXRR data, the superlattice peak indicates quality and interface sharpness of the nanolaminate; the onset of layer mixing is detected from the decrease of peak intensity. The discrete sublayers mixed here already below 450°C. In-situ curvature measurement showed only moderate changes detected upon heating of the structure up to 500°C and back to room temperature. With HTXRD it was found that anatase crystallized first at ~650 °C and rutile at ~725 °C, while corundum appeared at ~900 °C. For most laminates rutile and corundum remained as major phases, only in thickest bilayer there were signs of Al2TiO5/Ti3O5. Combining HTXRD/HTXRR with in-situ curvature measurements help to find processing window for ATO nanolaminates, where depending on application little to no changes in thermomechanical properties are needed. Not only this is useful for MEMS applications where thermal budget influences the usability of the material, but similar methodology can be used to study other laminate structures as well.

    KW - ALD

    KW - Atomic Layer Deposition

    KW - Nanolaminate

    M3 - Conference abstract in proceedings

    BT - 2018 E-MRS Fall book of abstracts

    ER -

    Heikkilä MJ, Ylivaara O, Atosuo E, Puurunen RL, Ritala M, Leskelä M. Properties of ALD grown Al2O3-TiO2 laminates investigated by high temperature XRD/XRR and in situ wafer curvature measurements. In 2018 E-MRS Fall book of abstracts. 2018