Abstract
ALD has a relatively well-established position as a
mainstream coating method in many application areas,
mainly due to good film conformality and possibility of
nanoscale material modification. Typically ALD deposited
oxide materials, such as Al2O3, have surface hydroxyl
groups after deposition, contributing to hydrophilic
properties. For example measured contact angle for ALD
alumina is around 50-60º and as-deposited TiO2 has
superhydrophilic properties, which decay soon after
deposition to 70-80º. For this presentation, we prepared
SiO2 samples by PEALD. According to TOF-ERDA measurements
the amount of carbon and nitrogen impurities were
relatively low, but hydrogen content increased at low
deposition temperatures. Carbon content was below 0.1
at-% if deposition temperature was 200 ºC. Regardless of
the deposition temperature hydrogen content remained
surprisingly high, being around 10-12 at-%. Low
deposition temperature resulted in low refractive
indices, most probably due to high hydrogen content.
Residual stresses were determined with surface
profilometer Veeco Dektak and wafer curvature method
using Stoney s equation. The magnitude of the stress of
SiO2 was too small to measure accurately for the given
samples; most likely it was some tens of MPa on the
compressive side. Water contact angles for PEALD SiO2
were below 20º. These values remained practically the
same even after few months storage in ambient air. The
main contribution for low contact angle is expected to be
the high hydrogen impurity content which increases film
hydrophilicity.
Original language | English |
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Title of host publication | Technical Program & Abstracts |
Publisher | American Vacuum Society (AVS) |
Publication status | Published - 2013 |
Event | 13th International Conference on Atomic Layer Deposition, ALD 2013 - San Diego, California, San Diego, United States Duration: 28 Jul 2013 → 31 Jul 2013 Conference number: 13 |
Conference
Conference | 13th International Conference on Atomic Layer Deposition, ALD 2013 |
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Abbreviated title | ALD 2013 |
Country/Territory | United States |
City | San Diego |
Period | 28/07/13 → 31/07/13 |
Keywords
- ALD
- Atomic Layer Deposition
- SiO2