Publisher's Note: Geometrical magnetoresistance effect and mobility in graphene field-effect transistors (Appl. Phys. Lett. (2022) 121 (013502) DOI: 10.1063/5.0088564)

Isabel Harrysson Rodrigues* (Corresponding Author), Andrey Generalov, Anamul Md Hoque, Miika Soikkeli, Anton Murros, Sanna Arpiainen, Andrei Vorobiev

*Corresponding author for this work

    Research output: Contribution to journalArticleScientific

    Abstract

    This article was originally published online on 7 July 2022 with errors on pages 5 and 6. In the paragraph starting with “This work was supposed…” a sentence was deleted, and a sentence was added to the end of the paragraph. The added sentence is “The authors are thankful to Saroj Prasad Dash for his assistance with the measurement equipment.” On page 6, the fourth line from the top, “Anamul Md Hoque: Data curation (equal); Validation (equal)” was added. All online versions of this article were corrected on 29 July 2022. AIP Publishing apologizes for these errors.

    Original languageEnglish
    Article number119901
    Pages (from-to)121
    Number of pages1
    JournalApplied Physics Letters
    Volume121
    Issue number11
    DOIs
    Publication statusPublished - 2022
    MoE publication typeNot Eligible

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